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| BLV4N60 N-channel Enhancement Mode Power MOSFET * * * BVDSS RDS(ON) ID 600V 2.2 4A BLV4N60 600V 4A N VDMOS TC=25oC VDS VGS ID IDM PD EAS IAR EAR Tj TSDG ( TC=100 oC) ( 1) 25 ( 2) 600 + 20 4 2.53 16 104 0.83 218 4 10.4 -55 to +150 -55 to +150 V V A A A W W/ mJ A mJ o o C C Rth j-c Rth j-a 1.2 62.5 / W / W http://www.belling.com.cn -1Total 6 Pages 10/23/2006 BLV4N60 N-channel Enhancement Mode Power MOSFET TC=25oC BVDSS BVDSS /TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss (Tc=125) VGS=0V, ID=250uA Reference to 25 ID=250uA VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=15V, ID=2A( 3) VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= 20V VDD=480V ID=4A VGS=10V ( 3) VDD=300V ID=4A RG=25 ( 3) VDS=25V VGS=0V f = 1MHz 600 2 0.6 3 23.7 5.4 9.4 13 21 35 25 690 125 14 2.2 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF IS ISM VSD t rr Qrr (1) VGS=0V, IS=4A VGS=0V, IS=4A (3) dIF/dt = 100A/us 680 2 4 16 1.4 A A V ns uC (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) L=25mH, Ias=4AVdd=50VRg=25staring Tj=25C (3) Pulse width 300 us; duty cycle 2% http://www.belling.com.cn -2Total 6 Pages 10/23/2006 BLV4N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVdss vs. Junction Temperature Fig 4. Normalized On-Resistance vs. Junction Temperature http://www.belling.com.cn -3Total 6 Pages 10/23/2006 BLV4N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics continued Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 7. Gate Charge Characteristics Fig 8. Capacitance Characteristics http://www.belling.com.cn -4Total 6 Pages 10/23/2006 BLV4N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics continued Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve http://www.belling.com.cn -5Total 6 Pages 10/23/2006 BLV4N60 N-channel Enhancement Mode Power MOSFET Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 12. Gate Charge Waveform Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit http://www.belling.com.cn Fig 16. Unclamped Inductive Switching Waveforms -6Total 6 Pages 10/23/2006 |
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