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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF900-110; BLF900S-110 Base station LDMOS transistors
Product specification Supersedes data of 2003 Sep 22 2004 Feb 04
Philips Semiconductors
Product specification
Base station LDMOS transistors
FEATURES * Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V, frequency of 881.5 MHz and IDQ of 700 mA; adjacent channel bandwidth is 30 kHz, adjacent channel at 750 kHz: - Output power = 24 W (AV) - Gain = 15 dB - Efficiency = 27% - ACPR = -45 dBc at 750 kHz and BW = 30 kHz. * 110 W CW performance * Easy power control * Excellent ruggedness * High power gain * Excellent thermal stability * Designed for broadband operation (800 to 1000 MHz) * Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
BLF900-110; BLF900S-110
APPLICATIONS * RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 110 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
handbook, halfpage
1
1 3 2 Top view
MBK394 MBL105
2 Top view
3
Leads are gold-plated.
Fig.1 Simplified outline SOT502A (BLF900-110).
Fig.2 Simplified outline SOT502B (BLF900S-110).
QUICK REFERENCE DATA Typical RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB CDMA (IS95) f (MHz) f1 = 890.0; f2 = 890.1 881.5 VDS (V) 27 27 PL (W) 100 (PEP) 24 (AV) Gp (dB) 17 15 D (%) 38 27 d3 (dBc) -33 - ACPR 750 (dBc) - -45
2004 Feb 04
2
Philips Semiconductors
Product specification
Base station LDMOS transistors
ORDERING INFORMATION TYPE NUMBER BLF900-110 BLF900S-110
BLF900-110; BLF900S-110
PACKAGE NAME - - DESCRIPTION Flanged LDMOST ceramic package; 2 mounting holes; 2 leads Earless flanged LDMOST ceramic package; 2 leads VERSION SOT502A SOT502B
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Tstg Tj drain-source voltage gate-source voltage storage temperature junction temperature PARAMETER - - -65 - MIN. MAX. 75 15 +150 200 V V C C UNIT
THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 3 mA VDS = 10 V; ID = 250 mA VGS = 0; VDS = 28 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 20 V; ID = 7.5 A VGS = VGSth + 9 V; ID = 9 A MIN. 75 4.5 - 31 - - - TYP. - - - - - 7 90 MAX. - 5.5 3 - 0.5 - - UNIT V V A A A S m PARAMETER thermal resistance from junction to case CONDITIONS Th = 25 C, PL = 160 W (AV), note 1 VALUE 0.9 UNIT K/W
2004 Feb 04
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Philips Semiconductors
Product specification
Base station LDMOS transistors
APPLICATION INFORMATION
BLF900-110; BLF900S-110
RF performance in a common source class-AB circuit. VDS = 27 V; f = 890 MHz; Th = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. - - <-6 -27 UNIT
Mode of operation: 2-tone CW, 100 kHz spacing, IDQ = 700 mA Gp D IRL d3 power gain drain efficiency input return loss third order intermodulation distortion ruggedness VSWR = 10 : 1 through all phases; PL = 125 W (PEP) PL = 100 W (PEP) 16 35 - - 17 (1) 38 -9 -33 dB % dB dBc
no degradation in output power
Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13), IDQ = 575 mA Gp D ACPR 750 Note 1. Refer to RF Gain grouping table. RF Gain grouping GAIN(2) (dB) MIN. B C D E Notes 1. 0.2 dB overlap is allowed for measurement repeatability. 2. For 2-tone at f1 = 890 MHz; f2 = 890.1 MHz. 16.0 16.5 17.0 17.5 MAX. 16.5 17.0 17.5 18.0 power gain drain efficiency adjacent channel power ratio PL = 24 W (AV) PL = 24 W (AV) at BW = 30 kHz - - - 15 27 -45 - - - dB % dBc
CODE(1)
2004 Feb 04
4
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
handbook, halfpage
22
MLE343
60 D (%) 40
handbook, halfpage
18 Gp
MLE344
50 D (%) 40
Gp (dB) 18
(dB) 17
Gp
Gp
16 D 15
30
20
14 D
20 14 10
10 1 10
102
Pout (W)
0 103
13 0 40 80
0 120 PL(PEP) (W)
VDS = 27 V; IDQ = 700 mA; f = 890 MHz.
VDS = 27 V; IDQ = 700 mA; f1 = 890.0 MHz; f2 = 890.1 MHz.
Fig.3
Power gain and efficiency as functions of load power; typical values.
Fig.4
Power gain and efficiency as functions of peak envelope load power; typical values.
handbook, halfpage
0
MLE345
handbook, halfpage
0
MLE346
dim (dBc)
dim (dBc) -20
-20
-40 -40
(1) (2)
(1)
-60
(2) (3)
(3)
-60
1
10
102 PL(PEP) (W)
103
-80
1
10
102
103 PL(PEP) (W)
VDS = 27 V; f1 = 890.0 MHz; f2 = 890.1 MHz. (1) IDQ = 600 mA. (2) IDQ = 800 mA. (3) IDQ = 700 mA.
VDS = 27 V; IDQ = 700 mA; f1 = 890.0 MHz; f2 = 890.1 MHz. (1) d3. (2) d5. (3) d7.
Fig.5
Third order intermodulation distortion as a function of peak envelope load power; typical values.
Fig.6
Third order intermodulation distortion as a function of peak envelope load power; typical values.
2004 Feb 04
5
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
handbook, halfpage
1.5
MLE348
handbook, halfpage
3
MLE349
ZI () 0.5
ri
ZL () 2.5
RI
-0.5
2
-1.5
xi
1.5 XL
-2.5 0.86
0.87
0.88
0.89
f (GHz)
0.9
1 0.86
0.87
0.88
0.89
f (GHz)
0.9
Class-AB operation; VDS = 27 V; IDQ = 700 mA; PL = 100 W. Values comprised for different parameters.
Class-AB operation; VDS = 27 V; IDQ = 700 mA; PL = 100 W. Values comprised for different parameters.
Fig.7
Input impedance as a function of frequency (series components); typical values.
Fig.8
Input impedance as a function of frequency (series components); typical values.
Gp 40 (dB)
mle347
-40 ACPR (dB) -50
D
(%) 30 ADJ
20 Gp
D
-60
handbook, halfpage
drain ZL gate Z IN
MGS998
10
ALT
-70
0 24 32 40 Pout (dBm) 48
-80
VDS = 27 V;IDQ = 575 mA; f = 881.5 MHz. Test signal: Single carrier IS-97 CDMA with PAR = 9.5 dB at 0.01 % (pilot, paging, sync, 6 traffic channels with Walsh codes 8-13). ADJ at 750 kHz offset in 30 kHz BW; ALT at 1.98 MHz offset in 30 kHz BW.
Fig.9
Single carrier CDMA performance as a function of output power.
Fig.10 Definition of transistor impedance.
2004 Feb 04
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C19 C18 C9 R1 C3 C4 C10 D.U.T. L2 L8 L9 C12 L3 L 11 L 10 RF out C6 C7 C5 C11 C14 C15 C16
mle351
Philips Semiconductors
Base station LDMOS transistors
L4 C8 C13 R3
R2 L1
Vdd
7
L5 RF in C1 L6 C2 L7
C17
L 12
BLF900-110; BLF900S-110
Product specification
Fig.11 Test circuit for 860 to 900 MHz operation.
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
58.5
58.5
L3
71
PHILIPS
900 MHz Input Rev. 1
PHILIPS
900 MHz Output Rev. 1
C19
_
R1 +V9 C3 C2 L5 C1 L6 C6 C7 C5 C11 L7 L2 L8 L9 L10 C14 R2 L1 C4 C9 C8 C10 C18 C13 C12 L3 C15 C16 L11 C17 L12 L4 R3 Vdd
+
PHILIPS
900 MHz Input Rev. 1
PHILIPS
900 MHz Output Rev. 1
mle350
Dimensions in mm. The components are situated on one side of the copper-clad Ultralam 2000 printed-circuit board (r = 2.5); thickness = 31 mm. The other side is unetched and serves as a ground plane.
Fig.12 Component layout for 860 to 900 MHz test circuit.
2004 Feb 04
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Philips Semiconductors
Product specification
Base station LDMOS transistors
List of components (see Figs 11 and 12) COMPONENT C1 C2, C12 C3, C13 C4 C5 C6, C7, C15 C8 C9 C10, C11 C14 C16 C17 C18 C19 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 R1 R2 R3 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. Mounted flat. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 trimmer capacitors (Tekelec); note 2 multilayer ceramic chip capacitor; note 1 tantalum capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 trimmer capacitor multilayer ceramic chip capacitor; note 1 tantalum capacitor; low ESR electrolytic capacitor ferrite bead (long) 3 turn ind. copper wire 4 turn ind. copper wire ferrite bead (short) stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 SMD resistor SMD resistor metal film resistor
BLF900-110; BLF900S-110
VALUE 30 pF 47 pF 300 pF 10 pF 3 pF 0.8 to 8 pF 20 nF 10 F; 35 V 13 pF 8.2 pF 0.5 to 4.5 pF 56 pF 10 F; 35 V 220 F; 40 V grade 4S2
DIMENSIONS
1 mm; int dia = 4.5 mm 1 mm; int dia = 3 mm grade 4S2 Z0 = 50 Z0 = 50 Z0 = 50 Z0 = 50 Z0 = 10 Z0 = 25 Z0 = 50 Z0 = 50 8.2 , 0.1 W 4.7 , 0.1 W 10 , 0.6 W 2 x 17.2 mm 2 x 25.4 mm 5.6 x 17.4 mm 16 x 10.2 mm 16 x 10.2 mm 5.6 x 17.4 mm 2 x 25.4 mm 2 x 17.2 mm
3. Striplines are on a double copper-clad Ultralam 2000 printed-circuit board (r = 2.5); thickness = 0.31 mm.
2004 Feb 04
9
Philips Semiconductors
Product specification
Base station LDMOS transistors
PACKAGE OUTLINES
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLF900-110; BLF900S-110
SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
2004 Feb 04
10
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
2004 Feb 04
11
Philips Semiconductors
Product specification
Base station LDMOS transistors
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development
BLF900-110; BLF900S-110
DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified
2004 Feb 04
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Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp13
Date of release: 2004
Feb 04
Document order number:
9397 750 12171

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