View BLF543_1219716.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF543 UHF power MOS transistor
Product specification October 1992
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability * Designed for broadband operation.
1 2 4 g 6
MBB072
BLF543
PIN CONFIGURATION
fpage
d
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices are marked with a VGS indication intended for matched pair applications. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source
3 5
s
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source class-B circuit. MODE OF OPERATION CW, class-B CW, class-B f (MHz) 500 960 VDS (V) 28 28 PL (W) 10 10 Gp (dB) > 12 typ. 8 D (%) > 50 typ. 50
October 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF543
MAX. 65 20 2 25 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink THERMAL RESISTANCE 7 K/W 0.4 K/W
handbook, halfpage
10
MRA991
handbook, halfpage
40
MDA488
ID (A)
Ptot (W) 30
(1)
(1)
(2)
1
(2)
20
10
10-1
1
10
VDS (V)
102
0 0 40 80 120 Th (C) 160
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
October 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 5 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 20 mA; VDS = 10 V ID = 20 mA; VDS = 10 V ID = 0.6 A; VDS = 10 V ID = 0.6 A; VGS = 10 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 1 - 300 - - - - -
BLF543
TYP. MAX. UNIT - - - - - 450 1.7 2.4 16 12 3.2 - 0.5 1 4 100 - 2.5 - - - - V mA A V mV mS A pF pF pF
handbook, halfpage
4
MDA491
handbook, halfpage
3
MDA495
T.C. (mV/K) 2
ID (A) 2
0
1 -2
-4 10-2
10-1
0 ID (A) 1 0 5 10 15 VGS (V) 20
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
October 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
handbook, halfpage
4
MDA496
handbook, halfpage
RDSon () 3
50 C (pF)
MDA497
40
30 2 20 1 10 Cis Cos
0 0 50 100 Tj ( C) 150
0 0 10 20 VDS (V) 30
ID = 0.6 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
20 Crs (pF) 16
MDA498
12
8
4
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
October 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.4 K/W, unless otherwise specified. RF performance in a common source class-B circuit. MODE OF OPERATION CW class-B CW class-B CW class-B Ruggedness in class-B operation The BLF543 is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. f (MHz) 500 960 960 VDS (V) 28 28 24 IDQ (mA) 20 20 20 PL (W) 10 10 7.5 Gp (dB) > 12 typ. 15 typ. 8 typ. 8
BLF543
D (%) > 50 typ. 60 typ. 50 typ. 50
handbook, halfpage
30
MDA490
80
handbook, halfpage
15
MDA489
Gp (dB) 20
Gp
D D (%) 60
PL (W) 10
10
40
5
0 0 5 10 PL (W)
20 15
0 0 0.5 1 PIN (W) 1.5
Class-B operation; VDS = 28 V; IDQ = 20 mA; ZL = 8.4 + j14.3 ; f = 500 MHz.
Class-B operation; VDS = 28 V; IDQ = 20 mA; ZL = 8.4 + j14.3 ; f = 500 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
October 1992
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
handbook, full pagewidth
C2 50 input C1
L1
C3
,,,, ,,, ,,,,
C4 L2 D.U.T. L4 L7 L3 BLF543 C5 L5 R1 C8 C6 L6 R5 C10 R2 C7 C11 C9
C12 L8
C14 C16 50 output
C13
C15
R3
R4
+VD
MDA500
Fig.11 Test circuit for class-B operation at 500 MHz.
October 1992
7
Philips Semiconductors
Product specification
UHF power MOS transistor
List of components (class-B test circuit at 500 MHz) COMPONENT C1, C6, C9, C16 C2, C14 C3, C5, C13, C15 C4 C7 C8, C10 C11 C12 L1 L2 L3, L4 L5 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor aluminium electrolytic capacitor multilayer ceramic chip capacitor (note 1) 1 turn enamelled 0.8 mm copper wire stripline (note 2) stripline (note 2) 7 turns enamelled 1 mm copper wire grade 3B Ferroxcube RF choke stripline (note 2) 55.7 31 x 2 mm int. dia. 3.2 mm leads 2 x 5 mm 1 turn enamelled 1 mm copper wire 8 nH 0.4 W metal film resistor 10 turns cermet potentiometer 0.4 W metal film resistor 1 W metal film resistor 1 k 5 k 19.6 k 10 VALUE 390 pF 7.5 pF 9 pF 20 pF 2 x 100 nF in parallel, 50 V 100 nF 10 F, 63 V 22 pF 11 nH 42.5 42.5 124 nH int. dia. 4.7 mm leads 2 x 5 mm 14.5 x 3 mm 6 x 3 mm length 7.8 mm int. dia. 4 mm leads 2 x 5 mm DIMENSIONS
BLF543
CATALOGUE NO.
2222 809 09002
2222 852 47104 2222 852 47104 2222 030 28109
L6 L7 L8 R1, R2 R3 R4 R5 Notes
4312 020 36640
2322 151 71002 2322 151 71963 2322 153 51009
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (r = 2.2); thickness 132 inch.
October 1992
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
handbook, full pagewidth
52 mm
6 mm
59 mm
mounting screw
rivet 70 mm
strap
strap
R3 +VG R4 R5 +VD
C7 R2 C8 C6 C2 C1 BLF543 L1 C4 R1 L2 L3 L5 L7 C12 L8 L4 C14 C16 L6 C9 C10 C11
C3
C5
C13
C15
MDA487
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
October 1992
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
handbook, full pagewidth
50 input
C1
,,,,, ,,,,,, ,,,,,
C14 C2 C4 C6 D.U.T. L5 L8 L8 L9 L1 L2 L3 L4 BLF543 C15 C16 C3 C5 C7 L6 C10 R3 C11 C8 R4 L10 C12 C13
MDA499
C17
50 output
C9
R2
R1
+VD
Fig.13 Test circuit for class-B operation at 960 MHz.
October 1992
10
Philips Semiconductors
Product specification
UHF power MOS transistor
List of components (class-B test circuit at 960 MHz) COMPONENT C1, C8, C10, C17 C2 C3, C5, C15, C16 C4 C6, C7 C9, C12 C14 C11, C13 L1 L2 L3 L4, L5 L6 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 2) film dielectric trimmer multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 2) aluminum electrolytic capacitor stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) 3 turns enamelled 0.8 mm copper wire stripline (note 3) stripline (note 3) stripline (note 3) grade 3B Ferroxcube RF choke 0.4 W metal film resistor 10 turns potentiometer 0.4 W metal film resistor 0.4 W metal film resistor 205 k 50 k 10 k 10 VALUE 68 pF 4.7 pF 1.2 to 5.5 pF 2 x 5.6 pF in parallel 7.5 pF 100 nF 2 x 4.7 pF in parallel 10 F, 63 V 50 50 50 42.5 35 nH 12.5 x 2.5 mm 19 x 2.5 mm 29.5 x 2.5 mm 3 x 3 mm length 4.6 mm int. dia. 4 mm leads 2 x 5 mm 12.5 x 2.5 mm 28.5 x 2.5 mm 20.5 x 2.5 mm DIMENSIONS
BLF543
CATALOGUE NO.
2222 808 00004
2222 852 47104
2222 030 28109
L7 L8 L9 L10 R1 R2 R3 R4 Notes
50 50 50
4312 020 36640 2322 151 72054 2322 151 71003 2322 153 51009
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (r = 2.2); thickness 132 inch.
October 1992
11
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF543
handbook, halfpage
10
MDA492
handbook, halfpage
40
MDA494
Zi () 0
ri
ZL () 30
RL
-10 xi
20
XL
-20
10
-30
0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W.
Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W.
Fig.14 Input impedance as a function of frequency (series components), typical values.
Fig.15 Load impedance as a function of frequency (series components), typical values.
Optimum input and load impedances
MDA493
handbook, halfpage
30
Gp (dB) 20
Optimum input impedance: 2.3 + j9.5 . Optimum load impedance: 4.3 + j8.6 . Conditions: class-B operation; VDS = 24 V; IDQ = 20 mA; f = 960 MHz; PL = 7.5 W; typical values.
10
0 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 20 mA; PL = 10 W.
Fig.16 Power gain as a function of frequency, typical values.
October 1992
12
Philips Semiconductors
Product specification
UHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLF543
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
October 1992
13
Philips Semiconductors
Product specification
UHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF543
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992
14

▲Up To Search▲

Price & Availability of BLF543

	To Download BLF543 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .