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| LAB TO247-AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) SEME BFC50 4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC VDSS ID(cont) RDS(on) 500V 23.0A 0.25 Terminal 1 Gate Terminal 3 Source 19.81 (0.780) 20.32 (0.800) Terminal 2 Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Total Power Dissipation @ Tcase = 25C Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. 500 23 92 30 310 -55 to 150 300 V A A V W C STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) Characteristic BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250A VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 23 0.25 Min. 500 Typ. Max. Unit V 250 1000 100 4 A nA V A 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. Prelim. 8/95 LAB DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 Min. Typ. 2380 522 196 83 12.6 51 14 27 61 36 Max. Unit 2950 730 290 130 19 76 28 55 92 71 ns nC pF SEME BFC50 SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/s 160 2.7 320 5.5 Min. Typ. Max. Unit 23 A 92 1.3 640 11 V ns C SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Min. 310 Typ. Max. Unit W SOA2 ILM Safe Operating Area Inductive Current Clamped 310 92 W A THERMAL CHARACTERISTICS RJC RJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 Min. Typ. Max. Unit 0.40 C/W 40 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. Prelim. 8/95 LAB Figure 1 MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION - CASE vs PULSE DURATION ZJC Thermal Impedance (C/W) SEME BFC50 Rectangular Pulse Duration (s) Figure 2 TYPICAL OUTPUT CHARACTERISTICS Figure 3 TYPICAL OUTPUT CHARACTERISTICS ID Drain Current (A) ID Drain Current (A) VDS Drain - Source Voltage (V) VDS Drain - Source Voltage (V) Figure 4 TYPICAL TRANSFER CHARACTERISTICS RDS(ON) Drain - Source On-Resistance (Normalised) VGS Gate - Source Voltage (V) Figure 5 RDS(ON) vs DRAIN CURRENT ID Drain Current (A) ID Drain Current (A) Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. Prelim. 8/95 LAB Figure 6 MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE Figure 7 BREAKDOWN VOLTAGE vs TEMPERATURE BVDSS Drain - Source Breakdown Voltage (Normalised) ID Drain Current (A) SEME BFC50 TC Case Temperature (C) TJ Junction Temperature (C) Figure 8 ON RESISTANCE vs TEMPERATURE RDS(ON) Drain - Source On-Resistance (Normalised) Figure 9 THRESHOLD VOLTAGE vs TEMPERATURE VGS(TH) Threshold Voltage (V) (Normalised) TJ Junction Temperature (C) TC Case Temperature (C) Figure 10 MAXIMUM SAFE OPERATING AREA Figure 11 TYPICAL CAPACITANCE vs DRAIN - SOURCE VOLTAGE ID Drain Current (A) VDS Drain - Source Voltage (V) C Capacitance (pF) VDS Drain - Source Voltage (V) Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. Prelim. 8/95 LAB Figure 12 GATE CHARGES vs GATE - SOURCE VOLTAGE BVDSS Drain - Source Breakdown Voltage (Normalised) VGS Gate - Source Voltage (V) SEME BFC50 Figure 13 TYPICAL SOURCE - DRAIN DIODE FORWARD VOLTAGE Qg Total Gate Charge (nC) TJ Junction Temperature (C) Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612. Prelim. 8/95 |
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