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DISCRETE SEMICONDUCTORS
DATA SHEET
BFC505 NPN wideband cascode transistor
Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 1996 Oct 08
Philips Semiconductors
Product specification
NPN wideband cascode transistor
FEATURES * Small size * High power gain at low bias current and high frequencies * High reverse isolation * Low noise figure * Gold metallization ensures excellent reliability * Minimum operating voltage VC2-E1 = 1 V. APPLICATIONS * Low voltage, low current, low noise and high gain amplifiers * Oscillator buffer amplifiers * Wideband voltage-to-current converters.
b1
handbook, halfpage
BFC505
PINNING - SOT353 PIN 1 2 3 4 5 SYMBOL b2 e1 b1 c1/e2 c2 base 2 emitter 1 base 1 collector 1/emitter 2 collector 2 DESCRIPTION
5
4 b2
c2
c1/e2
DESCRIPTION Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and has a very low feedback capacitance resulting in high isolation.
1 Top view
2
3 e1
MAM212
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground. SYMBOL Cre s 21 s 12 MSG F
2
PARAMETER feedback capacitance CB1-C2 maximum isolation maximum stable power gain noise figure
CONDITIONS Ie = 0; VC2-E1 = 0; f = 1 MHz IC = 5 mA; VC2 = VB2 = 3 V; f = 900 MHz IC = 0.5 mA; VC2 = VB2 = 1 V; f = 900 MHz; Tamb = 25 C IC = 0.5 mA; VC2-E1 = 1 V; f = 500 MHz; S = opt IC = 1 mA; VC2-E1 = 3 V; f = 900 MHz; S = opt
MIN. - 60 - - - - -
TYP. - - 22 1.1 1.8 - -
MAX. 10 - - 1.4 2.1 230 115
UNIT fF dB dB dB dB K/W K/W
Rth j-s
thermal resistance from junction to soldering point
single loaded double loaded
1996 Oct 08
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. - - - - up to Ts = 118 C; note 1 - -65 -
BFC505
MAX.
UNIT
Any single transistor VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature open emitter open base open collector 20 8 2.5 18 500 +175 175 V V V mA mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 single loaded double loaded CONDITIONS VALUE 230 115 UNIT K/W K/W
Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
NPN wideband cascode transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. - - - - 120
BFC505
MAX. - - - 50 250 - - 10 - - - - - - - - - 1.4 2.1 - -
UNIT
DC characteristics of any single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cc Cre2 Cre MSG collector-base breakdown voltage IC = 2.5 A; IE = 0 collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain IC = 10 A; IB = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 6 V IC = 5 mA; VCE = 6 V IC = 5 mA; VC2-E1 = 3 V; f = 1 GHz IE = ie = 0; VC2-B2 = 0; f = 1 MHz IC = 0; VC2-E1 = 3 V; f = 1 MHz IC = 0; VC2-E1 = 3 V; f = 1 MHz IC = 0.25 mA; VC2-E1 = 1 V; f = 300 MHz; Tamb = 25 C IC = 0.5 mA; VC2-E1 = 1 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 C s 21
2
20 8 2.5 - 60 - - - - - - - - - - 40 60 40 - - - -
V V V nA
AC characteristics of the cascode configuration measured in test circuit (note 1) transition frequency collector capacitance T2 feedback capacitance T2 feedback capacitance maximum stable power gain; note 2 7.3 0.4 250 - 25 22 23 21 16 11 45 68 48 1.1 1.8 3.5 -20 GHz pF fF fF dB dB dB dB dB dB dB dB dB dB dB dB dBm
insertion power gain
IC = 0.5 mA; VC2-E1 = 3 V; f = 300 MHz; Tamb = 25 C IC = 5 mA; VC2-E1 = 3 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 C
s 21 s 12
2
maximum isolation; note 3
IC = 0.5 mA; VC2-E1 = 1 V; f = 900 MHz IC = 5 mA; VC2-E1 = 3 V; f = 900 MHz IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz
F
noise figure
IC = 0.5 mA; VC2-E1 = 1 V; f = 500 MHz; S = opt IC = 1 mA; VC2-E1 = 3 V; f = 900 MHz; S = opt IC = 1 mA; VC2-E1 = 1 V; f = 2 GHz; S = opt
IP3
third order intercept point (input)
note 4
1996 Oct 08
4
Philips Semiconductors
Product specification
NPN wideband cascode transistor
Notes 1. VB2 = VC2-E1/2 + 0.6 V
2 2 2 1 + s 11 x s 22 - s 12 x s 21 - s 11 - s 22 2 2. MSG = s 12 s 21 x k - k - 1 ; k = ---------------------------------------------------------------------------------------------------------------2 x s 12 x s 21
BFC505
3. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application). 4. IC = 1 mA; VCE = 3 V; RS = 50 ; ZL = opt; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 904 MHz.
handbook, halfpage
600
MBG208
MBG209
handbook, halfpage
12
Ptot (mW) 400
double loaded
fT (GHz) 8
VC2-E1 = 12 V
9V
6V single loaded 200 4 3V
0 0 50 100 150 Ts (
oC)
200
0 10-1
1
10
IC (mA)
102
f = 1 GHz; Tamb = 25 C.
Fig.2
Power derating as a function of soldering point temperature; typical values.
Fig.3
Transition frequency as a function of collector current; typical values.
1996 Oct 08
5
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
handbook, halfpage
6
MGG213
handbook, halfpage
6
MGG214
F (dB) 4
IC = 0.25 mA
F (dB) 4 f = 900 MHz
1 mA
2
2 500 MHz
0 10-1
1
f (GHz)
10
0 10-1
1
IC (mA)
10
VC2-E1 = 1 V.
VC2-E1 = 1 V.
Fig.4
Minimum noise figure as a function of frequency; typical values.
Fig.5
Minimum noise figure as a function of collector current; typical values.
handbook, halfpage
50
MGG215
100 S21/S12 (dB) 80
handbook, halfpage
40
MGG216
80 S21/S12
MSG (dB) 40
(1)
MSG (dB) 30
(1)
(dB) 60
(2)
(2) (3) 30 60 (3) 20 20 40 40
10 10
102
103
f (MHz)
20 104
10 10-1
1
IC (mA)
20 10
(1) IC = 5 mA; VC2-E1 = 3 V. (2) IC = 1 mA; VC2-E1 = 1 V. (3) IC = 0.5 mA; VC2-E1 = 1 V.
(1) VC2-E1 = 1 V; f = 500 MHz. (2) VC2-E1 = 1 V; f = 900 MHz. (3) VC2-E1 = 3 V; f = 2 GHz.
Fig.6
Maximum stable gain and isolation as functions of frequency; typical values.
Fig.7
Maximum stable gain and isolation as functions of collector current; typical values.
1996 Oct 08
6
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
handbook, halfpage
25
MGG217
gain (dB)
handbook, halfpage
10
MGG218
RL = 470 20
IP3 (dBm) 0
(1)
15 50 10
(2)
-10
5
-20
(3) (4)
0 -5 10-1
1
IC (mA)
10
-30 10-1
1
IC (mA)
10
VCE = 1 V; RS = 50 ; XS = XL = opt; f = 900 MHz.
Point tuned for maximum gain with double slug tuners; f = 900 MHz. (1) IP3 (output); VC2-E1 = 3 V. (2) IP3 (output); VC2-E1 = 1 V. (3) IP3 (input); VC2-E1 = 3 V. (4) IP3 (input); VC2-E1 = 1 V.
Fig.8
Transducer gain as a function of collector current; typical values.
Fig.9
Third order intercept point as a function of collector current; typical values.
1996 Oct 08
7
Philips Semiconductors
Product specification
NPN wideband cascode transistor
APPLICATION INFORMATION SPICE parameters for any single BFC505 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 8 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 134.1 180.0 0.988 38.34 150.0 27.81 2.051 55.19 0.982 2.459 2.920 17.45 1.062 20.00 1.000 20.00 1.171 4.350 0.000 1.110 3.000 284.7 600.0 0.303 7.037 12.34 1.701 30.64 0.000 242.4 188.6 0.041 0.130 1.332 0.000 750.0 0.000 0.897 UNIT aA - - V mA fA - - - V mA aA - A - eV - fF mV - ps - V mA deg fF mV - - ns F mV - -
handbook, halfpage
BFC505
LP LP LB2 T2
C2
B2
LE2 C1/E2
LP B1 LP LB1 T1 LE1
LP E1
MBG216
Fig.10 Package equivalent circuit SOT353A (inductance only).
Lead and mutual inductances (nH)
LP LB1,2 LE1,2
0.4 0.5 0.8
M(LB1,LE1) M(LB1,LE2)
+0.4 +0.25
E1
35 3.5 2 36
B1
B2
35 35 35
E1
C2
36 2
B2
C1/E2
15
MBG217
C2
Fig.11 Package capacitance (fF) between indicated nodes.
Philips Semiconductors
Product specification
NPN wideband cascode transistor
Typical application circuits
BFC505
handbook, full pagewidth
CD Lout RS C out
+V RP C3
CC
RB1 CB
RF output (50 ) C4
RB2 RF input (50 ) C1 C2 Cpar
Cin
Lin
RB3 RE CE
MBG218
RS increases stability.
Fig.12 Narrowband amplifier.
handbook, full pagewidth
+VCC
RF output E1 T2
T1 Vtune
E1
MBG227
T1 forms a colpitts oscillator. T2 acts as a buffer amplifier.
Fig.13 VCO/buffer combination.
1996 Oct 08
9
Philips Semiconductors
Product specification
NPN wideband cascode transistor
PACKAGE OUTLINE
BFC505
handbook, full pagewidth
0.2 1.0 0.8 0.8 0.6 0.1 0.0 0.3 0.1 A 1.35 1.15 0.2 M B B 0.17 0.10
0.65
1
5 0.25 0.15 (5x) 2.2 1.8
0.65
2
3
MSA365
4 2.2 2.0 0.2 M A
Dimensions in mm.
Fig.14 SOT353.
1996 Oct 08
10
Philips Semiconductors
Product specification
NPN wideband cascode transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFC505
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 08
11

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