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| BBY59... Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in moblie communications equipment For control elements as TCXOS and VCXOS High capacitance ratio and good C-V linearity 1 BBY59-02V 2 Type BBY59-02V Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Package SC79 Configuration single LS (nH) Marking 0.6 RR Symbol VR IF Top Tstg Value 15 50 -55 ... 150 -55 ... 150 Unit V mA C 1 Jul-18-2002 BBY59... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V VR = 1 V, f = 470 MHz Series resistance CT1 /CT4 rS CT 26,6 13.6 8,4 6,1 3,4 27.8 15.3 9.5 6,95 4 0.45 29 17 10.9 7,8 4,6 0.7 pF Unit max. nA typ. IR 20 100 2 Jul-18-2002 BBY59... Diode capacitance CT = f = 1MHz (VR ) Temperature coefficient of the diode 2 60 pF 50 45 CT 40 35 30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 V TCC capacitance TCC = 0.00095 1/C 0.00085 0.0008 0.00075 0.0007 (VR ) 0.00065 0.0006 0.00055 0.0005 0.00045 0.0004 0.00035 0.0003 4 0.00025 0 0.5 1 1.5 2.5 3 3.5 4 V 5 VR VR 3 Jul-18-2002 |
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