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| APTM50UM13SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 500V RDSon = 13m typ @ Tj = 25C ID = 335A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant S Q1 G S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTM50UM13SAG Rev 1 July, 2006 Max ratings 500 335 250 1340 30 15 3290 71 50 3000 Unit V A V m W A APTM50UM13SAG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Tj = 25C VGS = 0V,VDS = 400V Tj = 125C VGS = 10V, ID = 167.5A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V VGS = 0V,VDS = 500V Typ 13 3 Max 400 2000 15 5 300 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID =335A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 335A R G = 0.8 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 335A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 335A, R G =0.8 Min Typ 42.2 8.24 0.42 800 200 420 21 42 96 100 4 4.16 6.32 4.64 Max Unit nF nC ns mJ mJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VR=200V IF = 240A IF = 480A IF = 240A IF = 240A VR = 133V di/dt = 800A/s Tj = 25C Tj = 125C T c = 85C Min 200 Typ Max 750 1000 Unit V A A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C www.microsemi.com 2-7 APTM50UM13SAG Rev 1 240 1.1 1.4 0.9 31 60 240 1000 1.15 V ns nC July, 2006 APTM50UM13SAG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 360A IF = 720A IF = 360A IF = 360A VR = 400V di/dt = 1000A/s Test Conditions VR=600V Tj = 25C Tj = 125C T c = 70C Min 600 Typ Max 1500 3000 Unit V A A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 360 1.6 1.9 1.4 130 170 1.32 5.5 1.8 V ns C Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode Parallel diode Typ Max 0.038 0.23 0.16 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 SP6 Package outline (dimensions in mm) www.microsemi.com 3-7 APTM50UM13SAG Rev 1 July, 2006 APTM50UM13SAG See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 4-7 APTM50UM13SAG Rev 1 July, 2006 APTM50UM13SAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.04 Thermal Impedance (C/W) 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 0.5 0.3 0.9 0.7 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 800 VGS=10&15V 7.5V 720 ID, Drain Current (A) 7V Transfert Characteristics V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 640 560 480 400 320 240 160 80 0 25 0 ID, Drain Current (A) 600 6.5V 400 6V 200 0 0 T J=25C T J=125C 5.5V 5V TJ=-55C 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 350 ID, DC Drain Current (A) 720 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 Normalized to VGS=10V @ 167.5A 300 250 200 150 100 50 0 25 50 75 100 125 TC, Case Temperature (C) 150 July, 2006 5-7 APTM50UM13SAG Rev 1 V GS=10V V GS=20V 120 240 360 480 600 I D, Drain Current (A) www.microsemi.com APTM50UM13SAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) Coss 10000 I D, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area VGS=10V ID=167.5A 1000 limited by RDSon 100 us 100 Single pulse TJ=150C TC=25C 1 1 ms 10 ms 10 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) July, 2006 I D=335A TJ =25C VDS=100V V DS =250V VDS=400V 10000 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 6-7 APTM50UM13SAG Rev 1 APTM50UM13SAG Delay Times vs Current 110 90 70 50 30 10 60 140 220 300 380 460 I D, Drain Current (A) 540 td(on) 160 VDS=333V RG=0.8 TJ=125C L=100H Rise and Fall times vs Current tf td(on) and t d(off) (ns) t r and tf (ns) VDS=333V RG=0.8 TJ=125C L=100H td(off) 120 80 tr 40 0 60 140 220 300 380 460 ID, Drain Current (A) 540 Switching Energy vs Current 12 Switching Energy (mJ) 10 8 6 4 2 0 60 140 220 300 380 460 I D, Drain Current (A) 540 Eon Switching Energy (mJ) V DS=333V RG=0.8 T J=125C L=100H Switching Energy vs Gate Resistance 24 20 16 12 8 4 0 2 Eoff 4 6 8 10 12 14 Eon VDS=333V ID=335A T J=125C L=100H Eoff Eoff Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150C Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 400 Frequency (kHz) 300 ZCS 100 TJ=25C 200 100 VDS=333V D=50% RG=0.8 TJ=125C TC=75C ZVS Hard switching 10 0 50 100 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 150 200 250 300 I D, Drain Current (A) 350 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTM50UM13SAG Rev 1 |
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