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APTM10AM05FTG
Phase leg MOSFET Power Module
VBUS Q1 NTC2
VDSS = 100V RDSon = 4.5m typ @ Tj = 25C ID = 278A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS V(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 100 278 207 1100 30 5 780 100 50 3000 Unit V A V m W A mJ
G1
S1
OUT Q2
G2
S2 0/VBU S NTC1
G2 S2
OUT
VBUS
0/VBUS
OUT
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM10AM05FTG- Rev 1 July, 2006
APTM10AM05FTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V
Min Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
4.5 2
Max 200 1000 5 4 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID = 250A Inductive switching @ 125C VGS = 15V VBus = 66V ID = 250A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 250A, R G =2.5 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 250A, R G = 2.5
Min
Typ 20 8 2.9 700 120 360 80 165 280 135 1.1 1.2 1.22 1.28
Max
Unit nF
nC
ns
mJ mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 250A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 0.8 3.4
IS = - 250A VR = 50V diS/dt = 200A/s
Max 278 207 1.3 5 190 370
Unit A V V/ns ns C
APTM10AM05FTG- Rev 1 July, 2006
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 278A di/dt 200A/s VR VDSS Tj 150C
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APTM10AM05FTG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.16 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTM10AM05FTG- Rev 1 July, 2006
APTM10AM05FTG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1200 ID, Drain Current (A) ID, Drain Current (A) 1000 800 600 400 200 0 0 4 8 12 16 20 24 28 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 125A 8V 7V 6V VGS =15V, 10V & 9V
Transfert Characteristics 240 200 160 120 80 40 0 0 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7
T J=25C T J=125C T J=-55C V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 300 250 200 150 100 50 0
1.1
V GS=10V
1 0.9 0.8 0 25 50 75 100 125 150 175 200 ID, Drain Current (A)
VGS=20V
25
50
75
100
125
150
APTM10AM05FTG- Rev 1 July, 2006
TC, Case Temperature (C)
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APTM10AM05FTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 10000
VGS=10V ID= 125A
1000
limited by RDSon
100s
100
Single pulse TJ=150C TC=25C 1
1ms
10ms
10 10 100 VDS , Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC)
APTM10AM05FTG- Rev 1 July, 2006
VDS=50V V DS =80V ID=250A TJ=25C V DS =20V
Ciss
10000
Coss
Crss
1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTM10AM05FTG
Delay Times vs Current 350 300 t d(on) and td(off) (ns)
VDS=66V RG=2.5 T J=125C L=100H
Rise and Fall times vs Current 250 200 tr and t f (ns)
V DS =66V RG =2.5 T J=125C L=100H
tr
250 200 150 100 50 0 0
t d(off)
150 100 50 0
tf
td(on)
100 200 300 ID, Drain Current (A) Switching Energy vs Current
400
0
100 200 300 ID, Drain Current (A)
400
Switching Energy vs Gate Resistance 5 Switching Energy (mJ)
VDS=66V ID=200A TJ=125C L=100H
3 2.5 Eon and Eoff (mJ) 2 1.5 1 0.5 0 0 100 200 300 400 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 100 80 60 40 20 0 50 100 150 200 250 I D, Drain Current (A)
VDS=66V D=50% RG=2.5 T J=125C T C=75C Hard switching ZCS VDS=66V RG=2.5 TJ=125C L=100H
Eoff
4 3 2 1 0 0
Eoff
Eon
Eon
Eoff
5
10
15
20
25
30
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
TJ=150C
Frequency (kHz)
100
TJ=25C
ZVS
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
APTM10AM05FTG- Rev 1 July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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