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| APTM100H18FG Full - Bridge MOSFET Power Module VB US Q1 Q3 VDSS = 1000V RDSon = 180m typ @ Tj = 25C ID = 43A @ Tc = 25C Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT1 OUT2 G3 S1 Q2 S3 Q4 Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 G4 S2 0/VBUS S4 * * OUT1 G1 S1 VBUS 0/VBUS G2 S2 * Benefits * * * * * S3 G3 OUT2 S4 G4 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM100H18FG- Rev 1 Max ratings 1000 43 33 172 30 210 780 25 50 3000 Unit V A V m W A mJ July, 2006 APTM100H18FG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C Min Typ VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V 180 3 Max 200 1000 210 5 150 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 43A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Min Typ 10.4 1.76 0.32 372 48 244 18 12 155 40 1800 1246 2846 1558 Max Unit nF nC ns J J Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C Min Typ VGS = 0V, IS = - 43A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 7.2 19.5 IS = - 43A VR = 670V diS/dt = 200A/s Max 43 33 1.3 18 320 650 Unit A V V/ns ns C dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 43A di/dt 700A/s VR VDSS Tj 150C www.microsemi.com 2-6 APTM100H18FG- Rev 1 July, 2006 APTM100H18FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 3 2 Typ Max 0.16 150 125 100 5 3.5 280 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 SP6 Package outline (dimensions in mm) www.microsemi.com 3-6 APTM100H18FG- Rev 1 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com July, 2006 APTM100H18FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 VGS =15, 10&8V Transfert Characteristics 160 140 I D, Drain Current (A) 120 100 80 60 40 20 0 30 0 1 2 3 4 5 T J=25C T J=125C VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle I D, Drain Current (A) 100 80 60 40 20 0 0 5 10 15 20 7V 6.5V 6V 5.5V 5V T J=-55C 25 6 7 8 9 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 21.5A VGS=10V VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 July, 2006 4-6 APTM100H18FG- Rev 1 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=20V 20 40 60 80 100 120 ID, Drain Current (A) TC, Case Temperature (C) www.microsemi.com APTM100H18FG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area VGS =10V ID=21.5A 1000 100s 100 limited by R DSon 1ms 10 Single pulse TJ =150C TC=25C 1 10ms 1 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 ID=43A TJ =25C VDS=200V VDS=500V V DS =800V 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTM100H18FG- Rev 1 APTM100H18FG Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 10 30 50 70 90 I D, Drain Current (A) Switching Energy vs Current V DS=670V RG =2.5 T J=125C L=100H Rise and Fall times vs Current 80 V DS =670V RG =2.5 T J=125C L=100H t d(off) tr and tf (ns) tf 60 40 tr 20 t d(on) 0 10 30 50 70 I D, Drain Current (A) 90 Switching Energy vs Gate Resistance 5 Switching Energy (mJ) 7 Switching Energy (mJ) V DS =670V RG =2.5 T J=125C L=100H Eon 4 3 2 1 0 6 5 4 3 2 1 0 0 Eoff VDS=670V ID=43A T J=125C L=100H Eoff Eon Eoff 10 30 50 70 90 5 10 15 20 I D, Drain Current (A) Operating Frequency vs Drain Current I DR, Reverse Drain Current (A) Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 250 200 Frequency (kHz) ZCS ZVS 1000 100 150 100 50 0 10 15 20 25 30 35 ID, Drain Current (A) 40 VDS=670V D=50% RG=2.5 T J=125C Tc=75C T J=150C T J=25C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 6-6 APTM100H18FG- Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com |
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