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APTM100DAM90G
Boost chopper MOSFET Power Module
VBUS CR1
VDSS = 1000V RDSon = 90m typ @ Tj = 25C ID = 78A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
OUT Q2
G2
S2 0/VBUS
VBUS
0/VBUS
OUT
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM100DAM90G- Rev 1
July, 2006
Tc = 25C
Max ratings 1000 78 59 312 30 105 1250 25 50 3000
Unit V A V m W A
APTM100DAM90G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
90 3
Max 400 2000 105 5 250
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 78A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 78A R G =1.2 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2
Min
Typ 20.7 3.5 0.64 744 96 488 18 12 155 40 3.6 2.5 5.7 3.1
Max
Unit nF
nC
ns
mJ
mJ
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=1000V Tj = 25C Tj = 125C Tc = 70C
Min 1000
Typ
Max 250 500
Unit V A A
IF = 100A IF = 200A IF = 100A IF = 100A VR = 670V di/dt = 200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
100 1.9 2.2 1.7 300 360 800 4050
2.5 V
July, 2006 2-6 APTM100DAM90G- Rev 1
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTM100DAM90G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.55 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
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3-6
APTM100DAM90G- Rev 1
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
July, 2006
APTM100DAM90G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 240
V GS=15, 10&8V
Transfert Characteristics 320 280 ID, Drain Current (A) 240 200 160 120 80 40 0 30 0 1 2 3 4 5
T J=25C T J=125C
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
200 160 120 80 40 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
T J=-55C
25
6
7
8
9
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 39A V GS=10V
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150
July, 2006 4-6 APTM100DAM90G- Rev 1
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=20V
40
80
120
160
200
240
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100DAM90G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=39A
1000
100s limited by R DSon
100
1ms
10
Single pulse TJ=150C TC=25C
10ms
1 1 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=78A TJ=25C
VDS=200V V DS =500V V DS=800V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM100DAM90G- Rev 1
APTM100DAM90G
Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current
V DS=670V RG =1.2 T J=125C L=100H
Rise and Fall times vs Current 80
VDS=670V RG=1.2 TJ=125C L=100H
t d(off) tr and tf (ns)
tf
60
40 tr 20
td(on)
0 20 40 60 80 100 120 140 160 I D, Drain Current (A)
Switching Energy vs Gate Resistance 14 Switching Energy (mJ) 12 10 8 6 4 2 0 0 2 4 6 8 Eoff Eon
VDS=670V ID=78A T J=125C L=100H
10
Switching Energy (mJ)
8 6 4 2 0 20
VDS=670V RG=1.2 TJ=125C L=100H
Eon
Eoff
Eoff
40
60
80
100 120 140 160
I D, Drain Current (A) Operating Frequency vs Drain Current
ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
250 200 Frequency (kHz)
ZCS
100
TJ=150C TJ=25C
150 100 50 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70
VDS=670V D=50% RG=1.2 T J=125C T C=75C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM100DAM90G- Rev 1

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