 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APTGT75TDU120PG Triple Dual Common Source Fast Trench + Field Stop IGBT(R) Power Module C1 C3 C5 VCES = 1200V IC = 75A @ Tc = 80C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability * RoHS Compliant Max ratings 1200 100 75 175 20 350 150A@1150V APTGT75TDU120PG - Rev 1 G1 G3 G5 E1 E1/E2 E3 E3/E4 E5 E5/E6 E2 E4 E6 G2 C2 G4 C4 G6 C6 C1 C3 C5 G1 E1/E2 E1 E2 G2 E3/E4 G3 E3 E4 G4 E5/E6 G5 E5 E6 G6 C2 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Unit V A V W July, 2006 1-5 Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT75TDU120PG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Test Conditions Min 1.4 5.0 Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Typ 1.7 2.0 Max 250 2.1 6.5 400 Unit A V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 VGE = 15V Tj = 125C VBus = 600V IC = 75A Tj = 125C R G = 4.7 Min Typ 5340 280 240 260 30 420 70 285 50 520 90 7 Max Unit pF ns ns mJ 8.1 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=1200V IF = 75A VGE = 0V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 Unit V A A 75 1.6 1.6 170 280 7 14 3 5.5 2.1 V ns C mJ July, 2006 2-5 APTGT75TDU120PG - Rev 1 IF = 75A VR = 600V di/dt =2000A/s www.microsemi.com APTGT75TDU120PG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.35 0.58 150 125 100 5 250 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M6 SP6-P Package outline (dimensions in mm) 5 places (3:1) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT75TDU120PG - Rev 1 July, 2006 APTGT75TDU120PG Typical Performance Curve 150 125 IC (A) Output Characteristics (VGE =15V) Output Characteristics 150 T J = 125C T J=25C 125 T J=125C VGE=17V VGE =13V VGE=15V VGE =9V 100 IC (A) 100 75 50 25 0 75 50 25 0 0 1 2 VCE (V) 3 4 0 1 2 V CE (V) 3 4 150 125 100 IC (A) 75 50 25 0 5 Transfert Characteristics 17.5 T J=25C TJ=125C Energy losses vs Collector Current 15 12.5 E (mJ) 10 7.5 5 2.5 0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150 Eoff Er VCE = 600V VGE = 15V RG = 4.7 T J = 125C Eoff Eon 6 7 8 9 10 11 12 100 125 150 VGE (V) Switching Energy Losses vs Gate Resistance 16 14 12 E (mJ) 10 8 6 4 2 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 Er VCE = 600V VGE =15V IC = 75A T J = 125C Eon 125 IC (A) 100 75 50 25 0 0 400 800 V CE (V) 1200 1600 VGE =15V TJ=125C RG=4.7 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 IGBT rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT75TDU120PG - Rev 1 July, 2006 APTGT75TDU120PG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 20 40 60 IC (A) 80 100 120 Hard switching ZCS ZVS VCE=600V D=50% R G=4.7 TJ =125C Forward Characteristic of diode 150 125 100 IF (A) 75 50 25 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 TJ =125C TJ=125C TJ=25C Tc =75C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT75TDU120PG - Rev 1 July, 2006 |
Price & Availability of APTGT75TDU120PG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |