 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APTDF400AA20G Dual Common Anode diodes Power Module K1 A VRRM = 200V IC = 400A @ Tc = 80C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits K1 A K2 K2 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% TC = 25C TC = 80C TC = 45C TC = 45C Max ratings 200 500 Unit V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF400AA20G - Rev 1 June, 2006 RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms 400 500 3000 A APTDF400AA20G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 400A IF = 800A IF = 400A Tj = 125C Tj = 25C VR = 200V Tj = 125C VR = 200V Min Typ 1.0 1.4 0.9 Max 1.1 Unit V 750 1000 1600 A pF Dynamic Characteristics Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions IF=1A,VR=30V di/dt = 400A/s Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 400A VR = 133V di/dt = 4000A/s Min Typ 39 60 110 800 3360 24 60 80 7.64 176 Max Unit ns ns nC A ns C A IF = 400A VR = 133V di/dt = 800A/s Tj = 125C Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 3 2 Typ Max 0.14 150 125 100 5 3.5 280 Unit C/W V C N.m g June, 2006 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 www.microsemi.com 2-4 APTDF400AA20G - Rev 1 APTDF400AA20G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 1200 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 1000 800 600 400 200 0 0.0 0.5 1.0 1.5 2.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge TJ =125C VR=133V T J=150C T J=125C T J=25C T J=-55C 120 Trr vs. Current Rate of Charge 400 A TJ =125C VR=133V 520 A 100 80 200 A 60 40 0 800 1600 2400 3200 4000 4800 -diF/dt (A/s) QRR, Reverse Recovery Charge (C) IRRM, Reverse Recovery Current (A) 9 8 7 6 5 4 3 2 0 200 160 120 IRRM vs. Current Rate of Charge T J=125C V R=133V 520 A 400 A 200 A 400 A 520 A 200 A 80 40 0 800 1600 2400 3200 4000 4800 -diF/dt (A/s) 800 1600 2400 3200 4000 4800 -diF/dt (A/s) Capacitance vs. Reverse Voltage 15000 C, Capacitance (pF) 12000 9000 6000 3000 0 1 10 100 1000 VR, Reverse Voltage (V) Max. Average Forward Current vs. Case Temp. 600 500 IF(AV) (A) 400 300 200 100 0 25 50 75 100 125 150 Case Temperature (C) Duty Cycle = 0.5 TJ=150C www.microsemi.com 3-4 APTDF400AA20G - Rev 1 June, 2006 APTDF400AA20G SP6 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF400AA20G - Rev 1 June, 2006 |
Price & Availability of APTDF400AA20G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |