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APTC80DDA15T3G Dual Boost chopper Super Junction MOSFET VDSS = 800V RDSon = 150m max @ Tj = 25C ID = 28A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Q2 4 Power Module 13 14 CR1 22 7 CR2 23 Q1 26 8 27 29 15 30 31 R1 32 16 3 * * * * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC80DDA15T3G - Rev 1 Max ratings 800 28 21 110 30 150 277 17 0.5 670 Unit V A V m W A July, 2006 APTC80DDA15T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Typ Tj = 25C Tj = 125C 2.1 3 VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V Max 50 375 150 3.9 150 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125C VGS = 15V VBus = 533V ID = 28A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Min Typ 4507 2092 108 180 22 90 10 13 83 35 486 278 850 342 Max Unit pF nC ns J J Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=1000V Tj = 25C Tj = 125C T c = 100C Min 1000 Typ Max 250 500 Unit V A A IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V di/dt=200A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 60 1.9 2.2 1.7 280 350 760 3600 2.5 V July, 2006 2-6 APTC80DDA15T3G - Rev 1 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.microsemi.com APTC80DDA15T3G Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode Min Typ Max 0.45 0.9 150 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 2500 -40 -40 -40 2.5 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTC80DDA15T3G - Rev 1 July, 2006 17 28 APTC80DDA15T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 40 I D, Drain Current (A) 50 60 VGS=20V Thermal Impedance (C/W) 10 Transfert Characteristics 100 V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle VGS=15&10V 6V 5.5V 5V 4.5V 4V ID, Drain Current (A) 6.5V 80 60 40 20 0 0 TJ =25C TJ =125C T J=-55C 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 30 ID, DC Drain Current (A) Normalized to V GS=10V @ 14A VGS=10V 25 20 15 10 5 0 25 50 75 100 125 150 July, 2006 4-6 APTC80DDA15T3G - Rev 1 TC, Case Temperature (C) www.microsemi.com APTC80DDA15T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area V GS=10V ID= 14A 100 limited by RDSon 100s 10 100ms 1ms 1 Single pulse TJ =150C TC=25C 1 10 100 1000 VDS, Drain to Source Voltage (V) 0 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 July, 2006 VDS=640V ID=28A T J=25C V DS =160V VDS=400V 10000 Ciss 1000 Coss Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5-6 APTC80DDA15T3G - Rev 1 APTC80DDA15T3G Delay Times vs Current Rise and Fall times vs Current 100 t d(off) td(on) and td(off) (ns) 50 40 t r and tf (ns) V DS=533V RG=2.5 T J=125C L=100H tf 80 60 40 20 0 10 20 30 40 I D, Drain Current (A) Switching Energy vs Current 30 20 10 0 VDS=533V RG=2.5 T J=125C L=100H tr t d(on) 50 10 20 30 40 I D, Drain Current (A) 50 Switching Energy vs Gate Resistance 1500 1200 900 600 300 0 Switching Energy (J) Eon and Eoff (J) VDS=533V RG=2.5 TJ=125C L=100H 2500 Eon 2000 1500 1000 500 0 V DS=533V ID=28A T J=125C L=100H Eon Eoff Eoff Eon 10 20 30 40 I D, Drain Current (A) 50 0 5 10 15 20 Gate Resistance (Ohms) 25 Operating Frequency vs Drain Current 350 Frequency (kHz) ZVS 300 250 200 150 100 50 0 6 Hard switching ZCS VDS=533V D=50% RG=2.5 TJ=125C TC=75C IDR , Reverse Drain Current (A) 400 Source to Drain Diode Forward Voltage 1000 100 T J=150C 10 T J=25C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) July, 2006 APTC80DDA15T3G - Rev 1 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 |
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