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APT50M75JLL
500V
51A 0.075
S G D S
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT50M75JLL UNIT Volts Amps
500 51 204 30 40 460 3.68 -55 to 150 300 51 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.075 100 500 100 3 5
(VGS = 10V, ID = 25.5A)
Ohms A nA Volts
9-2004 050-7001 Rev E
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M75JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 51A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 51A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 51A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 51A, RG = 5
MIN
TYP
MAX
UNIT
5590 1180 85 125 33 65 8 17 21 3 675 650 1110 755
MIN TYP MAX UNIT Amps Volts ns C nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
51 228 1.3 655 13.5 8
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -51A)
Reverse Recovery Time (IS = -51A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -51A, dlS /dt = 100A/s) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.92mH, RG = 25, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID51A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
, THERMAL IMPEDANCE (C/W)
0.25 0.20
0.9
0.7
0.15
0.5
Note:
PDM t1 t2
9-2004
0.10
0.3
050-7001 Rev E
JC
Z
0.05 0
0.1 0.05 10-5
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction temp. (C) RC MODEL
120 100 80 60 40
APT50M75 JLL
15 &10V 8V 7.5V
ID, DRAIN CURRENT (AMPERES)
0.0409
0.0246F
7V
Power (watts)
0.255
0.406F
6.5V
0.00361 Case temperature. (C)
148F
6V 20 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2
V
GS
0
140
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160
NORMALIZED TO = 10V @ I = 25.5A
D
120 100 80 60 40 20 0 TJ = +125C TJ = +25C TJ = -55C
1.1 VGS=10V 1.0 VGS=20V
0.9
012 34567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0.8
0
60
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
50 40 30 20 10 0 25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
= 25.5A
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
V
GS
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7001 Rev E
9-2004
204
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
APT50M75 JLL
Ciss
100
10,000 100S
C, CAPACITANCE (pF)
1,000
Coss
10
1mS 10mS TC =+25C TJ =+150C SINGLE PULSE
100
Crss
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I = 51A VDS=100V D VDS=250V 12 VDS=400V 8
1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
10
TJ =+150C
TJ =+25C
10
4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 100 90 80 td(off)
V
DD G
0
0
1 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 110 100 90 80
V
DD G
= 333V
R
= 5
T = 125C
J
L = 100H
td(on) and td(off) (ns)
70 60 50 40 30 20 10
= 333V
tf
tr and tf (ns)
R
= 5
T = 125C
J
70 60 50 40 30 20 10 tr
L = 100H
td(on)
1 10
50 60 70 80 90 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
20
30
40
50 60 70 80 90 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3000 2500
SWITCHING ENERGY (J)
V I
DD
10
20
30
40
2500
= 333V
= 333V
R
= 5
D J
= 51A
SWITCHING ENERGY (J)
2000
T = 125C
J
T = 125C L = 100H E ON includes diode reverse recovery
L = 100H EON includes diode reverse recovery
Eon
Eoff
2000 1500 1000 500 0
1500
1000
Eon
9-2004
500
050-7001 Rev E
Eoff
50 60 70 80 90 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
20
30
40
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT50M75 JLL
90 %
Gate Voltage 10 % t d(on) T J = 125 C Drain Current 90% tr 5% 10% Switching Energy 5% Drain Voltage
10% 0 Drain Current t d(off) tf 90% Drain Voltage Gate Voltage TJ = 125 C
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7001 Rev E
9-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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