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APT50M65B2LL APT50M65LLL
POWER MOS 7
(R)
500V 67A 0.065
B2LL
T-MaxTM
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
TO-264
LLL
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT50M65B2LL_LLL UNIT Volts Amps
500 67 268 30 40 694 5.5 -55 to 150 300 67 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.065 100 500 100 3 5
(VGS = 10V, 33.5A)
Ohms A nA Volts
12-2003 050-7012 Rev D
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M65 B2LL - LLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 67A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 333V, VGS = 15V ID = 67A, RG = 3
MIN
TYP
MAX
UNIT
7010 1390 87 141 40 70 12 28 29 30 1035 845 1556 1013 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
67 268 1.3 680 17.0 8
(Body Diode) (VGS = 0V, IS = -67A)
Reverse Recovery Time (IS = -67A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -67A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.34mH, RG = 25, Peak IL = 67A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -67A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
, THERMAL IMPEDANCE (C/W)
0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
12-2003
050-7012 Rev D
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
180
RC MODEL
APT50M65B2LL - LLL
15 &10V
ID, DRAIN CURRENT (AMPERES)
Junction temp. ( "C) 0.0271 0.00899F
160 140 120
8V
7V 100 80 60 40 20 0 6V 5.5V 5V 6.5V
Power (Watts)
0.0656
0.0202F
0.0860 Case temperature
0.293F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V
GS
160 140 120 100 80 60 40 20 0
NORMALIZED TO = 10V @ 33.5A
1.3
1.2 1.1 1.00 0.90 0.80 VGS=10V VGS=20V
TJ = +125C TJ = +25C TJ = -55C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
10 20 30 40 50 60 70 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
70 60 50 40 30 20 10 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I
D
1.15 1.10
ID, DRAIN CURRENT (AMPERES)
1.05
1.00
0.95
0.90 0.85 -50
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
= 33.5A = 10V
V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
2.0
1.1 1.0 0.9 0.8 0.7
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6 -50
050-7012 Rev D
12-2003
APT50M65B2LL - LLL
268
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
30,000 10,000
C, CAPACITANCE (pF)
100
Ciss
100S
1,000
Coss
10 1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 10mS
100
Crss
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
I
D
= 67A
200 100 TJ =+150C TJ =+25C 10
12
VDS=100V VDS=250V
8
VDS=400V
4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 80 70 60
td(on) and td(off) (ns)
V R = 3
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160
V
DD G
= 333V
td(off)
140 120
R
= 3
T = 125C
J
L = 100H
tf
G
40 30 20 10 0 10
T = 125C
J
tr and tf (ns)
50
DD
= 333V
100 80 60 40 20 tr
L = 100H
td(on)
30
50
70
90
110
ID (A) FIGURE 14, DELAY TIMES vs CURRENT 3000
V
DD G
70 90 110 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000
V I
DD
0 10
30
50
= 333V
= 333V
R
= 3
D J
= 67A
2500
SWITCHING ENERGY (J)
T = 125C
J
Eoff
SWITCHING ENERGY (J)
L = 100H
Eon
4000
T = 125C L = 100H E ON includes diode reverse recovery.
2000
E ON includes diode reverse recovery.
3000
1500
2000
12-2003
1000 500 Eoff 0 10
Eon
1000
050-7012 Rev D
0 30 50 70 90 110 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
90% 10 %
Gate Voltage
APT50M65B2LL - LLL
Gate Voltage
TJ = 125 C td(on) tr
Drain Current
T = 125 C J
td(off)
Drain Voltage
90% 90%
5% 10 %
Switching Energy Drain Voltage Switching Energy
10% tf 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAX(R) (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7012 Rev D
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
12-2003
19.81 (.780) 20.32 (.800)

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