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APT50M38JFLL
500V 88A
S G D
0.038
S
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
APT50M38JFLL
D G S
All Ratings: TC = 25C unless otherwise specified.
UNIT Volts Amps
500 88 352 30 40 694 5.56 -55 to 150 300 88 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.038 250 1000 100 3 5
(VGS = 10V, ID = 44A)
Ohms A nA Volts
4-2004 050-7030 Rev D
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT50M38JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 88A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 88A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 88A, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 88A, RG = 3 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
12000 2540 125 270 70 140 17 22 50 4 1295 940 1875 1165
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
88 352 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -88A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -88A, di/dt = 100A/s) Reverse Recovery Charge (IS = -88A, di/dt = 100A/s) Peak Recovery Current (IS = -88A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
300 600 2.2 9.0 16 33
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 0.93mH, RG = 25, Peak IL = 88A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID88A di/dt 700A/s VR 500 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 10 0.3 0.5 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
0.9
0.7
4-2004
050-7030 Rev D
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
RC MODEL
300 15 &10V
ID, DRAIN CURRENT (AMPERES)
APT50M38JFLL
8V 7.5V 7V
Junction temp. ( "C) 0.0244 0.0731F
250 200 150 100 50 0
Power (Watts)
0.133
0.701F
6.5V
0.0218 Case temperature
20.1F
6V 5.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V
GS
250
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ 45.5A
ID, DRAIN CURRENT (AMPERES)
200
1.3 1.2 1.1 1.0 VGS=20V 0.9 0.8 VGS=10V
150
TJ = -55C TJ = +125C TJ = +25C
100
50
0
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
20 40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
90 80
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
70 60 50 40 30 20 10 0 25
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
2.5
I
D
= 45.5A = 10V
V
GS
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7030 Rev D
4-2004
352
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
40,000 100S 10,000
C, CAPACITANCE (pF)
APT50M38JFLL
Ciss
100
Coss 1,000
1mS 10
10mS
100
Crss
1
TC =+25C TJ =+150C SINGLE PULSE
1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 91A
400
12 VDS=100V VDS=250V 8 VDS=400V
100
TJ =+150C
TJ =+25C
10
4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 140 120 100 80 60 40 20 0 20 td(off)
0
0
50
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 100 80
V
DD G
= 333V
R
= 5
T = 125C
J
L = 100H V
DD G
td(on) and td(off) (ns)
tf
= 333V
R
= 5
T = 125C
J
tr and tf (ns)
L = 100H
60 40 20 0 20
td(on) tr 40 60
80 100 120 140 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
40
60
80 100 120 140 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3500 3000
SWITCHING ENERGY (J)
3500 3000
SWITCHING ENERGY (J)
V
= 333V
R
= 5
Eoff
T = 125C
J
L = 100H
2500 2000 1500 1000 500
E ON includes diode reverse recovery.
2500 2000 1500
V
DD
Eon
Eon
= 333V
4-2004
1000 500 0
I
D J
= 88A
Eoff
T = 125C L = 100H EON includes diode reverse recovery.
050-7030 Rev D
80 100 120 140 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 20
40
60
5 10 15 20 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
Typical Performance Curves
90% 10% Gate Voltage TJ125C
APT50M38JFLL
Gate Voltage
td(on)
td(off)
TJ125C 90% Drain Voltage
tf tr
90% 5% 10% Switching Energy 5% Drain Voltage Switching Energy Drain Current 10% 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7030 Rev D
4-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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