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APT10026JFLL
1000V 30A 0.260
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
D
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
G S
All Ratings: TC = 25C unless otherwise specified.
APT10026JFLL UNIT Volts Amps
1000 30 120 30 40 595 4.76 -55 to 150 300 30 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1000 0.260 100 500 100 3 5
(VGS = 10V, 15A)
Ohms A nA Volts
12-2003 050-7114 Rev A
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT10026JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 38A, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 667V VGS = 15V ID = 38A, RG = 3
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
7114 1268 224 267 34 173 17 8 39 9 1196 713 2014 971
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
30 120 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -38A)
5
dv/
t rr
Reverse Recovery Time (IS = -38A, di/dt = 100A/s) Reverse Recovery Charge (IS = -38A, di/dt = 100A/s) Peak Recovery Current (IS = -38A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
310 625 2.0 6.0 15 26
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.21 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 7.11mH, RG = 25, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -30A di/dt 700A/s VR 1000 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.15
0.7
12-2003
0.5 0.10 0.3 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-7114 Rev A
Z
JC
0
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
90 80
Junction temp. (C)
APT10026JFLL
15 &10V 7.5V 7V
ID, DRAIN CURRENT (AMPERES)
RC MODEL
70 60 50 40 6V 30 20 5.5V 10 0 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V
GS
0.0492
0.0273F
6.5V
Power (watts)
0.142
0.469F
0.0189 Case temperature. (C)
44.2F
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120
VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ I = 15A
D
ID, DRAIN CURRENT (AMPERES)
100 80
1.3 1.2 VGS=10V 1.1
TJ = -55C
60 40
TJ = +25C
1.0 VGS=20V 0.9 0.8
20 TJ = +125C 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 30
0
10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
ID, DRAIN CURRENT (AMPERES)
25
1.10
20
1.05
15
1.00
10
0.95 0.90 0.85 -50
5 0 25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 15A = 10V
GS
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1
1.0 0.9 0.8
12-2003
1.5
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7114 Rev A
APT10026JFLL
120
OPERATION HERE LIMITED BY RDS (ON)
30,000
ID, DRAIN CURRENT (AMPERES)
50
C, CAPACITANCE (pF)
10,000 100S
Ciss
10 1mS
TC = +25C TJ = +150C SINGLE PULSE
1,000
Coss
10mS 100
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 38A
100
12
VDS = 200V
TJ =+150C
TJ =+25C
8
VDS = 500V
VDS = 800V
10
4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 160 140 120
td(on) and td(off) (ns)
V
0
0
50
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 100
V
DD G
td(off) 80
DD G
= 667V
R
= 3
T = 125C
J
L = 100H = 667V
tf
tr and tf (ns)
100 80 60 40 20 0
R
= 3
60
T = 125C
J
L = 100H
40
20 td(on) 0 5 10 15 20 25 30 35 40 45 50 55 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
tr
4000 3500
SWITCHING ENERGY (J)
V
DD G
= 667V
5 10 15 20 25 30 35 40 45 50 55 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000
V I
DD
= 667V
R
= 3
D J
= 38A
Eoff
T = 125C
J
SWITCHING ENERGY (J)
3000 2500 2000 1500 1000 500 0
L = 100H EON includes diode reverse recovery.
8000
T = 125C L = 100H E ON includes diode reverse recovery.
Eon
6000
4000 Eon 2000
12-2003
Eoff
050-7114 Rev A
0 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
5 10 15 20 25 30 35 40 45 50 55 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
10% 90%
APT10026JFLL
T = 125C
J
td(on)
td(off)
90% tr 90% 10% tf 5% 10%
5%
Switching Energy
Switching Energy
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7114 Rev A
12-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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