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APM2324A N-Channel Enhancement Mode MOSFET Features * 20V/3A , RDS(ON)=50m(typ.) @ VGS=4.5V RDS(ON)=90m(typ.) @ VGS=2.5V Pin Description * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23 D Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G S N-Channel MOSFET Ordering and Marking Information APM2324 Lead Free Code Handling Code Temp. Range Package Code Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2324A : M24X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 1 www.anpec.com.tw APM2324A Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Note: *Surface Mounted on 1in2 pad area, t (TA = 25C unless otherwise noted) Rating 20 10 VGS=4.5V 3 10 1 150 -55 to 150 TA=25C TA=100C 0.83 0.3 150 W C/W A C V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient 10sec. Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Parameter (TA = 25C unless otherwise noted) APM2324A Min. Typ. Max. Test Condition Unit VGS=0V, IDS=250A VDS=16V, VGS=0V VDS=VGS, IDS=250A VGS=10V, VDS=0V VGS=4.5V, IDS=3A VGS=2.5V, IDS=2A ISD=0.5A, VGS=0V 20 1 0.5 0.7 50 90 0.7 1 100 70 110 1.3 V A V nA m V RDS(ON) a Drain-Source On-state Resistance VSDa Qg Qgs Qgd Diode Forward Voltage Gate Charge Characteristics b Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=3A 5 0.7 0.7 6.5 nC Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 2 www.anpec.com.tw APM2324A Electrical Characteristics (Cont.) Symbol Parameter (T A = 25C unless otherwise noted) APM2324A Min. Typ. Max. Test Condition Unit Dynamic Characteristics b RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz 5 255 70 50 6 15 11 24 15 5 12 6 pF VDD=10V, IDS=1A, VGEN=4.5V, RG=6, RL=10 ns Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 3 www.anpec.com.tw APM2324A Typical Characteristics Power Dissipation 1.0 4.0 Drain Current 0.8 3.2 0.6 ID - Drain Current (A) o Ptot - Power (W) 2.4 0.4 1.6 0.2 TA=25 C 0.0 0 20 40 60 80 100 120 140 160 0.8 o 0.0 TA=25 C, VG=4.5V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 30 10 2 1 Thermal Transient Impedance ID - Drain Current (A) Duty = 0.5 Rd s(o n) Lim it 1 300s 1ms 10ms 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RJA : 150 C/W 2 0.1 100ms 1s DC T =25 C 0.01 A 0.01 0.1 o 1 10 100 0.01 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 4 www.anpec.com.tw APM2324A Typical Characteristics (Cont.) Output Characteristics 10 VGS= 3, 4, 5, 6, 7, 8, 9, 10V 0.12 0.14 VGS=2.5V Drain-Source On Resistance RDS(ON) - On - Resistance () 8 ID - Drain Current (A) 0.10 0.08 0.06 0.04 0.02 0.00 6 4 2V 2 VGS=4.5V 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 10 9 8 Gate Threshold Voltage 1.8 IDS =250A 1.6 Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 ID - Drain Current (A) 7 6 5 4 3 2 1 Tj=125 C o o Tj=25 C Tj=-55 C o 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 5 www.anpec.com.tw APM2324A Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 4.5V 1.6 IDS = 3A Tj=150 C o Source-Drain Diode Forward 10 Normalized On Resistance 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 RON@Tj=25 C: 50m 0 25 50 75 100 125 150 o IS - Source Current (A) 1 Tj=25 C o 0.1 0.0 0.4 0.8 1.2 1.6 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 500 Frequency=1MHz Gate Charge 5 VDS=10 V IDS = 3 A VGS - Gate - source Voltage (V) 400 4 C - Capacitance (pF) 300 Ciss 200 3 2 100 Crss 0 Coss 1 0 4 8 12 16 20 0 0 1 2 3 4 5 6 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 6 www.anpec.com.tw APM2324A Packaging Information SOT-23 D B 3 E 1 2 H e A A1 L C Dim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 1.90/2.1 BSC. 2.40 0.37 3.00 Max. 1.30 0.10 0.51 0.25 3.10 1.80 Min. 0.039 0.000 0.014 0.004 0.106 0.055 Inches Max. 0.051 0.004 0.020 0.010 0.122 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 7 www.anpec.com.tw APM2324A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 8 www.anpec.com.tw APM2324A Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3 <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures Package Thickness Volume mm 3 Volume mm 3 Volume mm 3 <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 9 www.anpec.com.tw APM2324A Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 1781 B 60 1.0 D 1.5 +0.1 C 12.0 D1 p0.1MIN J T1 T2 1.4 Ao 3.1 2.5 0.15 9.0 0.5 Po 4.0 P1 2.0 0.05 W 8.0+ 0.3 - 0.3 Bo 3.0 P 4.0 Ko 1.3 E 1.75 t 0.20.03 (mm) SOT-23 F 3.5 0.05 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Sep., 2005 10 www.anpec.com.tw |
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