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| AOU400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU400 is Pb-free (meets ROHS & Sony 259 specifications). AOU400L is a Green Product ordering option. AOU400 and AOU400L are electrically identical. Features VDS (V) = 60V ID = 38A (VGS = 10V) RDS(ON) < 20m (VGS = 10V) RDS(ON) < 25m (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B A B Maximum 60 20 38 27 60 30 140 60 30 -55 to 175 Units V V A A mJ W C TC=25C G B TC=100C ID IDM IAR EAR PD TJ, TSTG Steady-State Steady-State Symbol RJA RJC Typ 51 1.4 Max 60 2.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU400 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 60 16 31 20 5.6 0.74 1 4 1920 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 155 116 0.65 47.6 VGS=10V, VDS=30V, ID=20A 24.2 6 14.4 7.4 VGS=10V, VDS=30V, RL=1.5, RGEN=3 IF=20A, dI/dt=100A/s 5.1 28.2 5.5 34 46 41 0.8 68 30 2300 25 20 2.1 Min 60 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 50 40 4V ID (A) 30 20 3.5V 10 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 10 25C ID(A) 30 20 4.5V 40 VDS=5V 125C 50 24 Normalized On-Resistance 22 RDS(ON) (m) VGS=4.5V 20 18 VGS=10V 16 14 0 10 20 30 40 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 2.4 2.2 VGS=10V 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=20A ID=20A 50 ID=20A 40 RDS(ON) (m) 125C 30 IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C 20 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOU400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 500 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics VDS=30V ID=20A Capacitance (pF) 3500 3000 2500 2000 1500 Coss 1000 Crss Ciss 100.0 RDS(ON) limited 10.0 ID (Amps) 800 100s 1ms 10s Power (W) TJ(Max)=175C TA=25C 600 400 DC 1.0 TJ(Max)=175C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 200 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJc Normalized Transient Thermal Resistance D=Ton/T TJ,PK=Tc+PDM.ZJc.RJc RJC=2.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 50 40 30 20 10 0 0.00001 80 Power Dissipation (W) tA = L ID BV - VDD 60 40 TA=25C 20 0 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 40 Current rating ID(A) 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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