 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AO4705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4705 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4705 is Pb-free (meets ROHS & Sony 259 specifications). AO4705L is a Green Product ordering option. AO4705 and AO4705L are electrically identical. A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G S A Features VDS (V) = -30V ID = -10A (VGS = -10V) RDS(ON) < 14m (VGS = -20V) RDS(ON) < 16m (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 5A, VF<0.52V@3A D K SOIC-8 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain CurrentA Pulsed Drain Current B MOSFET -30 25 -10 -8 -60 Schottky Units V V A VGS TA=70C ID IDM VKA TA=25C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B TA=70C TA=25C TA=70C IF IFM PD TJ, TSTG Symbol RJA RJL RJA RJL 3 2 -55 to 150 Typ 28 54 21 36 67 25 30 5 3.5 30 3 2 -55 to 150 Max 40 75 30 40 75 30 V A W C Units C/W Steady-State Steady-State t 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Maximum Junction-to-Ambient C/W Alpha & Omega Semiconductor, Ltd. AO4705 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-10A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-20V, ID=-10A VGS=-4.5V, ID=-10A gFS VSD IS Forward Transconductance VDS=-5V, ID=-10A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -1.7 60 13 16 10.7 25 26 -0.72 -1 -4.2 2076 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 503 302 2 37.2 VGS=-10V, VDS=-15V, ID=-10A 7 10.4 12.4 VGS=-10V, VDS=-15V, RL=1.0, RGEN=3 IF=-10A, dI/dt=100A/s 8.2 25.6 12 33 23 0.48 0.07 4.2 15 120 0.52 0.15 20 60 pF mA 16 21 14 -2.5 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/s IF=3.0A VR=24V VR=24V, TJ=125C VR=24V, TJ=150C CT Junction Capacitance VR=15V 2 SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in The SOA curve provides a single pulse rating. Rev 4: June 2005 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -10V 40 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 25 VGS=-6V Normalized On-Resistance 1.6 ID=-10A 20 RDS(ON) (m) 1.4 VGS=-10V -8V -6V -5.5V -5V -ID (A) -ID(A) 25 VDS=-5V 20 15 10 125C -4.5V VGS=-4V 5 25C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 15 VGS=-10V VGS=-20V 1.2 10 VGS=-20V 5 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=-10A 50 40 30 20 10 0 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C 25C 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) 125C AO4705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 3000 VDS=-15V ID=-10A Capacitance (pF) 2500 2000 1500 Coss 1000 500 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss 100.0 RDS(ON) limited -ID (Amps) 10.0 100s 1ms 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC Power (W) 10s 40 TJ(Max)=150C TA=25C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK =TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125C Capacitance (pF) 1 IF (Amps) 600 500 400 300 200 100 0.8 1.0 0 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0 5 f = 1MHz 0.1 0.01 25C 0.001 0.0 0.2 0.4 0.6 VF (Volts) Figure 12: Schottky Forward Characteristics 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 100 125 Temperature (C) 150 175 IF=5A 1.0E-01 1.0E-02 1.0E-03 VR=24V 1.0E-04 1.0E-05 1.0E-06 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature IF=3A Figure 14: Schottky Forward Drop vs. Junction Temperature 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Leakage Current (A) VF (Volts) 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AO4705L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |