 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AO4610 Complementary Enhancement Mode Field Effect Transistor General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical. Features n-channel VDS (V) = 30V ID = 8.5A(VGS=10V) RDS(ON) < 18m (VGS=10V) < 28m (VGS=4.5V) VF<0.5V@1A p-channel -30V -7.1A(VGS = -10V) RDS(ON) < 25m (VGS = -10V) < 40m (VGS = -4.5V) D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 K D1 G2 S2 A G1 S1 SOIC-8 n-channel p-channel Max p-channel -30 20 -7.1 -5.6 -30 2 1.28 -55 to 150 Units V V A W C Units V A W C Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain 8.5 TA=25C A Current 6.6 TA=70C ID B Pulsed Drain Current IDM 30 2 TA=25C PD TA=70C 1.28 Power Dissipation Junction and Storage Temperature Range TJ, TSTG -55 to 150 Parameter Reverse Voltage Continuous Forward A Current Symbol VDS ID IDM PD TJ, TSTG TA=25C TA=70C B Pulsed Forward Current Power Dissipation TA=25C TA=70C Junction and Storage Temperature Range A Maximum Schottky 30 3 2 20 2 1.28 -55 to 150 Alpha & Omega Semiconductor, Ltd. AO4610 Thermal Characteristics: n-channel, Schottky and p-channel Parameter Symbol t 10s Maximum Junction-to-Ambient A RJA Steady-State Maximum Junction-to-Ambient A RJL Steady-State Maximum Junction-to-Lead C t 10s Maximum Junction-to-Ambient A RJA Steady-State Maximum Junction-to-Ambient A RJL Steady-State Maximum Junction-to-Lead C t 10s Maximum Junction-to-Ambient A RJA Steady-State Maximum Junction-to-Ambient A RJL Steady-State Maximum Junction-to-Lead C Device n-ch n-ch n-ch p-ch p-ch p-ch Schottky Schottky Schottky Typ 48 74 35 48 74 35 47.5 71 32 Max 62.5 110 60 62.5 110 40 62.5 110 40 Units C/W C/W C/W C/W C/W C/W C/W C/W C/W Alpha Omega Semiconductor, Ltd. AO4610 N-Channel + Schottky Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6.6A Forward Transconductance VDS=5V, ID=8.5A 10 Body-Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current TJ=125C 1 40 15.5 22.3 23 23 0.75 1 5.5 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.7 19.2 VGS=10V, VDS=15V, ID=8.5A 9.36 2.6 4.2 5.2 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s IF=8.5A, dI/dt=100A/s IF=1.0A VR=30V VR=30V, TJ=125C VR=30V, TJ=150C CT Junction Capacitance VR=15V 4.4 17.3 3.3 16.7 6.7 0.45 0.007 3.2 12 37 0.5 0.05 10 20 pF mA 18 27 28 1.8 100 3 Min 30 25 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET+Schottky) Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body-Diode+Schottky Reverse Recovery Time Body-Diode+Schottky Reverse Recovery Charge SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4610 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 28 Normalized On-Resistance 26 24 RDS(ON) (m) 22 20 18 16 14 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 1.0E+01 1.0E+00 40 RDS(ON) (m) ID=8.5A IS (A) 1.0E-01 125C 1.0E-02 25C 1.0E-03 20 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS=10V VGS=4.5V 1.6 VGS=10V 1.4 ID=8.5A VGS=4.5V 1.2 4V 10V 4.5V 3.5V 12 ID(A) 125C 8 VGS=3V 4 0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 20 16 VDS=5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 30 125C 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. AO4610 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss 100.0 RDS(ON) limited 1ms 10ms 0.1s 100s 10s Power (W) 50 40 30 20 10 0 0.001 TJ(Max)=150C TA=25C 10.0 ID (Amps) 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 1s 10s DC 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. AO4610 P-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-7.1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5.6A Forward Transconductance VDS=-5V, ID=-7.1A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.4 -30 20 27 29 19.6 -0.7 -1 -4.2 1573 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 319 211 6.7 30.9 VGS=-10V, VDS=-15V, ID=-7.1A 16.1 8 4.4 9.5 VGS=-10V, VDS=-15V, RL=2.2, RGEN=3 IF=-7.1A, dI/dt=100A/s 8 44.2 22.2 25.5 14.7 25 33 40 -2 Min -30 -1 -5 100 -2.7 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a givenapplication depends on the user's specific board design. The current rating is based on the tt 10s thermal resistance agiven application depends on the user's specific board design. The current rating is based on the 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4610 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -10V 25 -4V 20 -ID (A) -ID(A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 16: On-Region Characteristics 40 VGS=-4.5V Normalized On-Resistance 35 30 25 VGS=-10V 20 15 10 0 5 10 15 20 25 -ID (A) Figure 18: On-Resistance vs. Drain Current and Gate Voltage 60 ID=-7.1A 1.0E+01 1.0E+00 1.0E-01 RDS(ON) (m) -IS (A) 40 125C 30 125C 1.0E-02 1.0E-03 1.0E-04 20 25C 1.0E-05 1.0E-06 3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 21: Body-Diode Characteristics 25C 1.6 ID=-7.1A 1.4 VGS=-10V -3.5V VGS=-3V 20 15 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 17: Transfer Characteristics 125C 25C -5V 30 25 VDS=-5V RDS(ON) (m) 1.2 VGS=-4.5V ID=-5.6A 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 19: On-Resistance vs. Junction Temperature 50 10 -VGS (Volts) Figure 20: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. AO4610 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 24 28 32 -Qg (nC) Figure 22: Gate-Charge Characteristics 2250 VDS=-15V ID=-7.1A Capacitance (pF) 2000 1750 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 23: Capacitance Characteristics Coss Crss Ciss 100.0 TJ(Max)=150C, T A=25C RDS(ON) limited 0.1s 1.0 10s 100s 1ms 10ms 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 24: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC Power (W) 40 TJ(Max)=150C TA=25C -ID (Amps) 10.0 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 25: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. AO4610 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125C Capacitance (pF) 250 f = 1MHz 1 IF (Amps) 200 150 100 50 0 0 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 5 10 0.1 0.01 25C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF (Volts) Figure 12: Schottky Forward Characteristics 0.7 Leakage Current (mA) 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 100 125 Temperature (C) 150 175 IF=1A IF=3A 100 10 1 0.1 0.01 0.001 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature VF (Volts) VR=30V Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AO4610L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |