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50W High Linearity Low Noise Wideband Gain Block
Data Sheet - Rev 2.0
AGB3303
FEATURES

DC-4500 MHz Operation Bandwidth +39 dBm Output IP3 at 850 MHz 4 dB Noise Figure at 850 MHz 21 dB Gain at 850 MHz +19 dBm P1dB SOT-89 Package Single +7.5 V to +12 V Supply Case Temperature: -40 to +85 C
APPLICATIONS

Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD systems Fixed Wireless MMDS/WLL WLAN, HyperLAN
S24 Package SOT-89
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise and low distortion. No external matching components are needed for insertion into a 50W system. With a high output IP3, low noise figure and wide band
PRODUCT DESCRIPTION
operation, the AGB3303 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3303 requires a single supply voltage, and typically consumes 0.6 Watts of power using a +8 V supply.
RF Input
RF Output / Bias
Figure 1: Block Diagram
10/2003
AGB3303
GND
4
1
RFIN
2
GND
3
RFOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN 1 2 3 4
N AME RFIN GND RFOUT GND
D ESC R IPTION RF Input Ground RF Output / Bi as Ground
2
Data Sheet - Rev 2.0 10/2003
AGB3303
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PAR AMETER D evi ce Voltage (VCC) RF Input Power (PIN) Storage Temperature (TSTG) Juncti on Temperature MIN 0 -40 MAX +6 +10 +150 +200 U N IT VD C dB m C C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PAR AMETER Operati ng Frequency (f) (1) Supply Voltage (VSUPPLY) (2) C ase Temperature (TC)
MIN -40
TYP +8 -
MAX 4500 +85
U N IT MHz VD C C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) Operating frequency is defined by the output return loss (S22) having a VSWR less than 2:1. (2) Voltage applied through a bias resistor and inductor. Refer to Figure 3. For other supply voltages, see the APPLICATION INFORMATION section.
Data Sheet - Rev 2.0 10/2003
3
AGB3303 Table 4: Electrical Specifications (TA = +25 C, VSUPPLY = +8 VDC, 50W system)
PAR AMETER Gai n (S21) 850 1950 2140 2450
(1)
MIN MHz MHz MHz MHz MHz MHz MHz MHz 19.0 +35.5 -
TYP 20.8 18.6 18.2 17.6 +39.4 +40.2 +41.2 +40.0
MAX 21.5 -
U N IT
dB
Output IP3
850 1950 2140 2450
dB m
Output 1dB C ompressi on (P1dB) 850 MHz 1950 MHz Noi se Fi gure 850 MHz
70
+19 +19 4.0 140 77
5.5 90
dB m dB C /W mA
Thermal Resi stance ( UJC) (2) Supply C urrent (IC C )
Notes: (1) OIP3 is measured with two tones at 1 MHz spacing at 0 dBm output power per tone. (2) The value for Thermal Resistance is based on a Device Voltage (VCC) of +5.0 Volts. 3. Performance as measured on ANADIGICS test fixture (see Figure 3).
V SUPPLY
38 W Bypass RF Choke 100 nH 0.01 mF 100 pF 10 pF
DC Block RF Input 0.01 mF AGB3303 VCC
DC Block RF Output 0.01 mF
Figure 3: Application Circuit ( 50W Terminations)
4
Data Sheet - Rev 2.0 10/2003
AGB3303
PERFORMANCE DATA
Figure 4: Gain vs. Frequency De-embedded 50W S-parameter (TA = +25 C, VCC = +5.0 V, ICC = 80 mA)
25
0
Figure 5: Isolation vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA)
20
-10
Mag S12: Isolation (dB)
Mag S21: Gain (dB)
15
-20
10
-30
5
-40
0 0 1 2 3 4 5 6 7
-50 0 1 2 3 4 5 6 7
Frequency (GHz)
Frequency (GHz)
0
Figure 6: Input Return Loss vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA)
Mag S22: Output Return Loss (dB)
0 1 2 3 4 5 6 7
0
Figure 7: Output Return Loss vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA)
Mag S11: Input Return Loss (dB)
-10
-10
-20
-20
-30
-30
-40
-40
-50
-50 0 1 2 3 4 5 6 7
Frequency (GHz)
Frequency (GHz)
Data Sheet - Rev 2.0 10/2003
5
AGB3303
APPLICATION INFORMATION
The AGB3303 is optimized for a bias current of 80 mA. Using a +8 V supply, a bias resistor (RS) of 38 W will provide the appropriate bias (see Figure 3). Table 5 shows the recommended value of RS for other supply voltages. Table 5: Bias Resistor Values for Various Supply Voltages
VSUPPLY RS +7.5 V 32 +8 V 38 +10 V 63 +12 V 88
6
Data Sheet - Rev 2.0 10/2003
AGB3303
PACKAGE OUTLINE
Figure 8: S24 Package Outline SOT-89
3303 LLLLNN
LLLL= FOUR NUMERIC CHARACTERS
Figure 9: Branding Specification
Data Sheet - Rev 2.0 10/2003
7
AGB3303
ORDERING INFORMATION
PART NUMBER AGB3303S24Q1 TEMPERATURE RANGE -40 to +85C PACKAGE DESCRIPTION SOT-89 Package COMPONENT PACKAGING 1,000 piece Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a products formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
WARNING
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Data Sheet - Rev 2.0 10/2003

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