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7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright (c) 1999, Power Innovations Limited, UK JANUARY 1999
TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
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Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
V(BR) DEVICE MINIMUM V 7EL2 245 V(BO) MINIMUM V 265 V(BO) MAXIMUM V 400
CELL PACKAGE (SIDE VIEW)
T(A)
R(B)
q
Rated for International Surge Wave Shapes
ITU-T K28 DEVICE (10/700) ITSP A 7EL2 400 GR-974-CORE (10/1000) ITSP A 300
MD4XACA
device symbol
T
q q
Gas Discharge Tube (GDT) Replacement
SD4XAA
Planar Passivated Junctions in a Protected Cell Construction Low Off-State Current Extended Service Life
R Terminals T and R correspond to the alternative line designators of A and B
q
Soldered Copper Electrodes High Current Capability Cell Construction Short Circuits Under Excessive Current Conditions
description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93). To conform to the specified environmental requirements, the 7EL2 must be installed in a housing which maintains a stable microclimate during these tests. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. The 7EL2 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability of 10 A rms for 1 second. One of the 7EL2's copper electrodes is specially shaped to promote a progressive shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 7EL2 in compression, so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross conditions the 7EL2 will fail short circuit, providing maximum protection to the equipment.
PRODUCT
INFORMATION
1
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. Manufactured by TI using silicon designed and manufactured by Power Innovations, Bedford, UK.
7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
absolute maximum ratings, TA = 25C (unless otherwise noted)
RATING Non-repetitive peak on-state pulse current (see Notes 1 and 2) 5/310 s (ITU-T K28, 10/700 s voltage wave shape) 10/1000 s (GR-974-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Note 1) full sine wave, 50/60 Hz, 1 s Junction temperature Storage temperature range -40C to 65C ITSM TJ Tstg 10 -40 to +150 -40 to +150 A rms C C -20C to 65C -20C to 65C ITSP 400 300 A SYMBOL VALUE UNIT
NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium. 2. Most PTT's quote an unloaded voltage waveform. In operation the 7EL2 essentially shorts the generator output. The resulting loaded current waveform is specified.
electrical characteristics for the T and R terminals, TA = 25C (unless otherwise noted)
PARAMETER V(BR) V(BO) V(BO) Breakdown Voltage Breakover voltage Impulse breakover voltage Impulse reset TEST CONDITIONS I(BR) = 20 mA, (see Note 3) dv/dt = 0.2 V/s, RSOURCE > 200 -40C to 65C +15C to 25C -40C to 65C -40C to 65C MIN 245 265 400 400 TYP MAX UNIT V V V
100 V/s dv/dt 1000 V/s, di/dt 10 A/s Sources are 52.5 V O.C., 260 mA S.C. and 135 V O.C., 200 mA S.C. on-state current 25 A, 10/1000 s impulse VD = 50 V (see Note 4) VD = 200 V f = 1 MHz, Vd = 1 Vrms, VD = 0,
-40C to 65C -40C to 65C -40C to 65C -40C to 65C
20 0.5 10 200
ms
ID Coff
Off-state current Off-state capacitance
A pF
NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7) 4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment
PRODUCT
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INFORMATION
7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
PARAMETER MEASUREMENT INFORMATION
+i ITSP Quadrant I Switching Characteristic
ITSM
V(BO)
-v I(BR) V(BR)
VD
ID ID VD
V(BR) I(BR) +v
V(BO)
ITSM Quadrant III Switching Characteristic ITSP -i
PMXXAG
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
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INFORMATION
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7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100
NORMALISED BREAKDOWN VOLTAGE (V(BR)) vs JUNCTION TEMPERATURE
I(BR) = 20 mA
TC4VAH
TCVAG
1.15
10 |ID| - Off-State Current - A VD = 200 V 1 Normalised Voltage
1.10
1.05
0*1
VD = 50 V
1.00
0*01
0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
0.95 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Figure 2. NORMALISED BREAKOVER VOLTAGE (V(BO)) vs JUNCTION TEMPERATURE
TC4VAJ
Figure 3. NORMALISED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4VAK
1.5
1.05
Normalised Holding Current
Normalised Voltage
1.0 0.9 0.8 0.7 0.6 0.5
1.00
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 4.
Figure 5.
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INFORMATION
7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
TYPICAL CHARACTERISTICS
OFF-STATE CAPACITANCE vs TERMINAL VOLTAGE
200
TC4VAM
200
OFF-STATE CAPACITANCE vs JUNCTION TEMPERATURE
TC4VAL
VD = 0 Off-State Capacitance - pF Off-State Capacitance - pF
100 90 80 70 60 50 40 Vd = 1 Vrms, f = 1 MHz, TA = 25 C 30 0*1
VD Positive
100 90 80 70 60 50 40
VD = +50 V
VD Negative
VD = - 50 V
Vd = 1 Vrms, f = 1 MHz 100 30 -40
1 10 VD - DC Off-State Voltage - V
-20
0 20 40 60 TJ - Junction Temperature - C
80
Figure 6. CUMULATIVE POPULATION vs 10/1000 CURRENT CAPABILITY TC4VAN
99 98 95 Cumulative Population - % 90 80 70 60 50 40 30 20 10 5
Figure 7.
2 1 +65 C +25 C -5 C -20 C = TA 0.5 370 380 390 400 410 420 430 440 450 460 470 I - Peak Current Capability - A
Figure 8.
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INFORMATION
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7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
RATING AND THERMAL INFORMATION
MAXIMUM NON-RECURRING 60 Hz CURRENT vs CURRENT DURATION TI4VAA
ITRMS - Maximum Non-Recurrent 60 Hz Current - A 100 TA = 65 C VGEN = 600 Vrms RGEN = 10 to 200
10
1 0*1
1
10 100 t - Current Duration - s
1000
Figure 9.
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INFORMATION
7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
MECHANICAL DATA cell package
BUTTON CELL 7EL2
0,508 (0.020) MAX
Top Electrode
2,45 (0.096) 2,16 (0.085)
Sleeve Bidirectional Silicon Chip 0,178 (0.007) MAX
Bottom Electrode
2,67 (0.105)
2,16 (0.085)
6,10 (0.240)
MAX
ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES
MD4XAO
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INFORMATION
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7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1999, Power Innovations Limited
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INFORMATION

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