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| VRSM IFAVM IFRMS IFSM VF0 rF = 5200 V = 1978 A = 3106 A = 25.6x103 A = 0.94 V = 0.284 m Rectifier Diode 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 03 * Very low on-state losses * Optimum power handling capability Blocking Maximum rated values 1) Parameter Repetetive peak reverse voltage Characteristic values Symbol Conditions VRRM f = 50 Hz, tp = 10ms, Tj = -40...160C f = 5 Hz, tp = 10ms, Tj = -40...160C min typ Value 5000 5200 max 50 Unit V V Unit mA Non - repetetive peak reverse voltage VRSM Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 20 typ 22 max 24 50 100 Unit kN m/s m/s Unit kg mm mm mm mm 2 2 Parameter Weight Housing thickness Pole-piece diameter Surface creepage distance Symbol Conditions m H DP DS min typ 0.5 26 47 max 33 Air strike distance Da 18 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 20F5000 On-state Maximum rated values 1) Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IFAVM 50 Hz, Half sine wave, TC = 85 C min typ max 1978 3106 Unit A A A A2s A A2s Unit V V m Max. RMS on-state current IFRMS IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 4000 A, Tj = 160C Tj = 160C IT = 2827...8480 A min typ tp = 8.3 ms, Tj = 160C, VR = 0 V tp = 10 ms, Tj = 160C, VR = 0 V 25.6x10 2.727x10 24x10 2.88x10 3 6 3 6 Parameter On-state voltage Threshold voltage Slope resistance max 2.1 0.94 0.284 Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -30 A/s, VR = 100 V min typ 4500 max 5500 Unit As Recovery charge IFRM = 1000 A, Tj = 160C Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 160 160 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled typ max 15 24 40 4 8 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i Ri(K/kW) i(s) 1 6.060 0.6937 2 3.850 0.2040 3 3.780 0.0452 4 1.320 0.0040 Fig. 1 Transient thermal impedance junction-tocase. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1162-01 Jan. 03 page 2 of 5 n 5SDD 20F5000 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1 2 3 VF 4 (V) 10 1 10 t ( ms ) 2 100 25 3,5 25 C IF ( A ) 50 IFSM ( kA ) 160 C 6 I FSM 25C o i2dt 25C i 2dt (106 A2s) 45 5,5 40 160C 160 C 30 5 35 4,5 4 20 3 15 2,5 Fig. 2 Max. on-state characteristics. Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V PT ( W ) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 PT ( W ) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200 60 120 180 DC = 30 60 90 120 180 270 DC 1600 2000 I FAV ( A ) 2400 0 400 800 1200 1600 2000 I FAV ( A ) 2400 Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 50 Hz Fig. 5 Forward power loss vs. average forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1162-01 Jan. 03 page 3 of 5 5SDD 20F5000 TC ( C ) TC ( C ) 170 160 150 140 130 120 110 100 90 80 70 60 0 400 800 1200 170 160 150 140 130 120 110 DC 100 90 80 70 DC 270 180 60 1600 120 2000 180 60 0 400 800 I FAV ( A ) 2400 = 30 1200 60 1600 90 120 2000 I FAV ( A ) 2400 Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz 10000 Qrr ( C ) max Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz 1000 IrrM ( A ) max min min 1000 100 100 1 10 dI F /dt ( A/s ) 100 10 1 10 dI F /dt ( A/s ) 100 Fig. 8 Reverse recovery charge vs. dIF/dt, IF= 1000 A; Tj = Tjmax, limit values Fig. 9 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1162-01 Jan. 03 page 4 of 5 5SDD 20F5000 Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1162-01 Jan. 03 |
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