![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=12V, IE=-0.1A VCB=10V, f=1MHz 2SD2016 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ V V MHz pF 13.0min Equivalent circuit B C (2k) (200) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2016 200 200 6 3 0.5 25(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Igniter, Relay and General Purpose (Ta=25C) Unit External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 A V 16.90.3 8.40.2 mA 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 2.54 3.9 BCE IC - VCE Characteristics (Typical) A mA V CE ( sat ) - IB Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 3 I C - VBE Temperature Characteristics (Typical) 3 (V CE= 4V) 3 3m 1.5 1mA Collector Current I C( A) 0.5m A 2 2 Collector Current I C( A) 2 p) Tem mp) (Cas e Te 25C (Ca 1 1 12 5C 25C 1 se -5 5C 0 0 1 2 3 4 0 0.2 1 Base Current I B( mA) 3 0 0 1 Base-Emittor Voltage V B E( V) -55C (C 125 C ase Tem p) I B= 0 .3m A 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. 2 Collector-Emitter Voltage V C E( V) hFE - IC Characteristics (Typical) (VCE=4V) 10000 5000 DC Cur rent Gain h FE hFE - I C Temperature Characteristics (Typical) (V C E= 4V) 10000 5000 DC Curr ent Gain h F E j-a - t Characteristics j - a( C/W) Transient Thermal Resistance 5 125 C 1000 500 25 C 1000 500 C -55 100 50 1 100 50 0.03 0.1 0.5 1 3 10 0.03 0.1 0.5 1 3 0.5 1 5 10 50 Time t(ms) 100 500 1000 Collector Current I C( A) Collector Current I C (A) fT - IE Characteristics (Typical) (VCE=12V) 80 Safe Operating Area (Single Pulse) 30 P c - T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm Cut- off F req uency f T( MH Z) 60 Ma xim um Powe r Dissipat io n P C( W) 20 W ith In 40 fin 150x150x2 1 00x1 0 10 0x 2 ite he at si nk 20 50x50x2 Without Heatsink 2 0 -0.01 -0.05 -0.1 -0.5 -1 -3 0 0 25 50 75 100 125 150 Emitter Current I E( A) Ambient Temperature Ta(C) 141 |
Price & Availability of 2SD2016
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |