 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 5.00.2 4.00.2 Unit: mm q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -120 -120 -5 -1 - 0.5 1 150 -55 ~ +150 Unit V V V A A W C C 123 2.540.15 1.27 0.45 -0.1 1.27 +0.15 13.50.5 Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is optimum for the pre-driver stage of a 40 to 60W output amplifier. 0.70.1 0.70.2 8.00.2 s Features 0.45 -0.1 +0.15 2.30.2 1:Emitter 2:Collector 3:Base TO-92NL Package s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = -0.1mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -150mA*2 VCE = -5V, IC = -500mA*2 IC = -300mA, IB = -30mA*2 IC = -300mA, IB = -30mA*2 250 30 *2 min -120 -5 90 50 typ max Unit V V 220 -1.0 -1.2 V V MHz pF VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz Pulse measurement *1h FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 Rank hFE1 1 Transistor PC -- Ta 1.6 -1.2 Ta=25C 2SB1297 IC -- VCE 600 VCE=-10V IB=-10mA -1.0 hFE -- IC Collector power dissipation PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Collector current IC (A) -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA Forward current transfer ratio hFE 1.4 500 - 0.8 400 - 0.6 300 Ta=75C 200 25C -25C 100 - 0.4 - 0.2 0 0 -2 -4 -6 -8 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C IC/IB=10 320 fT -- I E VCB=-10V Ta=25C -100 -30 -10 -3 -1 Transition frequency fT (MHz) -10 280 240 200 160 120 80 40 0 Ta=-25C 25C 75C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 -1 -3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 40 -10 IE=0 f=1MHz Ta=25C -30 Area of safe operation (ASO) Single pulse Ta=25C Collector output capacitance Cob (pF) 35 30 25 20 15 10 5 0 -1 Collector current IC (A) -10 ICP IC t=1s t=10ms - 0.3 - 0.1 - 0.03 - 0.01 - 0.003 - 0.001 -1 -3 -10 -30 -100 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 |
Price & Availability of 2SB1297
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |