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| LAB MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SEME 2N2905A HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR FEATURES * SILICON PLANAR EPITAXIAL PNP TRANSISTOR 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. * HIGH SPEED SATURATED SWITCHING * ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 * CECC SCREENING OPTIONS * SPACE QUALITY LEVELS OPTIONS 45 TO39 METAL PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG RqJA RqJC Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range -60V -60V -5V 600mA 600mW 3.43mW / C 3W 17.2mW / C -65 to +200C THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 292C/W 58C/w Prelim. 6/99 Semelab plc. LAB ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IB 1 SEME 2N2905A Test Conditions IB = 0 IE = 0 IC = 0 VBE = -0.5V VCB = -50V TA = 150C VCE = -30V IC = -150mA IC = -500mA IC = -150mA IC = -500mA IC = -0.1mA IC = -1mA VBE = -0.5V IB = -15mA IB = -50mA IB = -15mA IC = -50mA VCE = -10V VCE = -10V VCE = -10V VCE = -10V 1 VCE = -10V VCE = -20V 1 Min. -60 -60 -5 Typ. Max. Unit V OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage IC = -10mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Base Current ON CHARACTERISTICS IC = -10mA IE = -10mA VCE = -30V IE = 0 V V -50 -0.01 -10 -50 -0.4 -1.6 -1.3 -2.6 mA nA nA VCE(sat)1 VBE(sat) Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage V V 75 100 100 100 50 300 -- hFE DC Current Gain IC = -10mA IC = -150mA IC = -500mA SMALL SIGNAL CHARACTERISTICS fT Cob Cib Transition Frequency 2 Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time IC = -50mA f = 100MHz VCB = -10V IE = 0 f = 1.0MHz VBE = -2V f = 1.0MHz VCC = -30V IC = -150mA IB1 = -15mA VCC = -6V IC = -150mA IB1 = IB2 = -15mA 26 6 20 70 50 20 IC = 0 200 8 30 MHz pF pF ton td tr toff ts tf 45 10 40 100 80 30 ns ns NOTES: 1) Pulse test: tp 300ms , d 2% 2) fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 |
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