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| 2N2894CSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) * SILICON PLANAR EPITAXIAL PNP TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) * SCREENING OPTIONS AVAILABLE A 1.40 (0.055) max. 2.54 0.13 (0.10 0.005) 3 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) A= 0.76 0.15 (0.03 0.006) 0.31 rad. (0.012) * HIGH SPEED, LOW SATURATION SWITCH 1.02 0.10 (0.04 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 - Base PAD 2 - Emitter PAD 3 - Collector APPLICATIONS: Hermetically sealed surface mount version of the popular 2N2894 for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25C Derate above 25C @ TC =25C Derate above 25C Operating and Storage Temperature Range -12V -12V -4V 200mA 360mW 2.06mW / C 1.2W 6.85mW / C -65 to +200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 10/98 2N2894CSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO V(BR)EBO ICBO ICES VCE(sat) Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector - Emitter Saturation Voltage Test Conditions IC = 10mA IE = 10mA VCB = -6V VBE = 0 IC = -10mA IC = -30mA IC = -100mA IC = -10mA IE = 0 IB = 0 IC = 0 Tamb = 125C VCE = -6V IB = -1mA IB = -3mA IB = -10mA IB = -1mA IB = -3mA IB = -10mA VCE = -0.3V VCE = -0.5V VCE = -1V VCE = -0.5V Tamb = 125C f = 100MHz IC = 0 IC = 0 VCE = -2V VCE = -2V Min. - 12 - 12 -4 Typ. Max. Unit V - 10 - 80 -0.15 -0.20 - 0.50 V Collector - Emitter Breakdown Voltage IC = 10mA nA -0.78 -0.85 30 40 25 17 400 -0.98 -1.2. -1.7 150 --- V VBE(sat) Base - Emitter On Voltage IC = -30mA IC = -100mA IC = -10mA IC = -30mA hFE DC Current Gain IC = -100mA IC = -30mA VCE = -10V IC = -30mA VEB = -5V f = 1MHz VCB = -5V f = 1MHz IC = -30mA IB2 = -1.5mA IC = -30mA fT Cebo Ccbo ton toff Current Gain Bandwidth Product Emitter - Base - Capacitance Collector - Base - Capacitance Turn on Time MHz 6 6 60 9 pF pF ns ns Turn off Time IB1 = IB2= -1.5mA * Pulse Test: tp 300ms, d 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 10/98 |
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