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| 28M0 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION 60V 300mA MONOLITHIC DIODE ARRAY FEATURES: * * * * TWO EIGHT DIODE CORE DRIVER trr < 20 ns RUGGED AIR-ISOLATED CONSTRUCTION LOW REVERSE LEAKAGE CURRENT A J J J J .061" Absolute Maximum Ratings: C C A .054" Symbol Parameter Limit 60 300 500 -65 to +150 -65 to +200 Unit Vdc mAdc mAdc C C J J J J VBR(R) *1 *2 Reverse Breakdown Voltage IO *1 Continuous Forward Current IFSM *1 Peak Surge Current (tp= 1/120 s) Top Operating Junction Temperature Range Tstg Storage Temperature Range NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% Electrical Characteristics (Per Diode) @ 25C unless otherwise specified Symbol Parameter Conditions Min 60 1 1.5 0.1 8.0 40 20 Vdc Vdc uAdc pF ns ns Max Unit BV1 Breakdown Voltage IR = 10uAdc Vf1 Forward Voltage IF = 100mAdc *1 Vf2 Forward Voltage IF = 500mAdc *1 IR1 Reverse Current VR = 40 Vdc Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz tfr Forward Recovery Time IF = 500mAdc trr Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge Packaging Options: W: Wafer (100% probed) U: Wafer (sample probed) D: Chip (Waffle Pack) B: Chip (Vial) V: Chip (Waffle Pack, 100% visually inspected) X: Other Metallization Options: Standard: Al Top / Au Backside (No Dash #) Processing Options: Standard: Capable of JANTXV application (No Suffix) Suffix C: Commercial Suffix S: Capable of S-Level equivalent applications ORDERING INFORMATION PART #: 28M0_ _- _ First Suffix Letter: Packaging Option Second Suffix Letter: Processing Option Dash #: Metallization Option Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice. MSC1025.PDF Rev - 12/3/98 |
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