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| 1T409 Variable Capacitance Diode Description The 1T409 is a variable capacitance diode designed for UHF-band VCO using a super-smallminiature flat package (SSVC). Features * Super-small-miniature flat package * Low series resistance: 0.4 Max. (f=470 MHz) * Large capacitance ratio: 2.5 Typ. (C2/C10) * Small leakage current: 3 nA Max. (VR=15 V) Applications * UHF-band VCO * Local oscillator for cordless telephone * Local oscillator for cellular equipment Structure Silicon epitaxial planar type diode M-290 Absolute Maximum Ratings (Ta=25 C) * Reverse voltage VR 15 * Operating temperature Topr -35 to +85 * Storage temperature Tstg -65 to +150 V C C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Symbol IR C2 C10 C2/C10 rs Conditions VR=15 V VR=2 V, f=1 MHz VR=10 V, f=1 MHz VR=5V, f=470 MHz Min. Typ. Max. 3 15.96 6.46 2.5 0.3 0.4 (Ta=25 C) Unit nA pF pF 14.26 5.46 2.2 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E96144A98-TE 1T409 Diode capacitance vs. Reverse voltage 100 Ta=25C 50 10 Reverse current vs. Ambient temperature VR=15V C-Diode capacitance (pF) 20 10 5 IR-Reverse current (pA) 1 2 1 1 2 5 10 20 VR-Reverse voltage (V) 50 0.1 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Forward voltage vs. Ambient temperature 0.90 35 Reverse voltage vs. Ambient temperature VR-Reverse voltage (V) VF-Forward voltage (V) IF=1mA 0.80 IR=10A 30 0.70 25 0.60 -20 0 20 40 60 Ta-Ambient temperature (C) 80 20 -20 0 20 40 60 Ta-Ambient temperature (C) 80 --2-- 1T409 Diode capacitance vs. Ambient temperature 1.03 VR=1V C (Ta)/C (25C)-Diode capacitance 1.02 VR=2V 1.01 VR=7V VR=10V 1.00 0.99 0.98 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Reverse current vs. Reverse voltage 100 1000 Temperature coefficient of diode capacitance Temperature coefficient (ppm/C) 500 Ta=80C IR-Reverse current (pA) 10 200 Ta=60C 100 1 50 1 2 5 10 VR-Reverse voltage (V) 20 50 Ta=25C 0.1 1 3 10 VR-Reverse voltage (V) 30 --3-- 1T409 Package Outline Unit : mm M290 1 3 1. }0. A 1 7 1. }0. 0. } 1 8 0. 2 0. M A 10 KM AX b c 10 KM AX 1 7 0. }0. BASE M ETAL W I PLATI G TH N c b 0. }0. 11 005 0. }0. 3 025 05 0. {0.01 11 |0. 05 0. {0. 3 |0. 02 PAC KAG E M ATER I AL SO N Y C O D E EI C O D E AJ JED EC C O D E M290 LEAD TR EATM EN T LEAD M ATER I AL PAC KAG E W EI H T G EPO XY R ESI N SO LD ER PLATI G N C O PPER 0. 002g Mark 1 S9 --4-- 2 1 : Cathode 2 : Anode 05 2 0. }0. |
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