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1N6507 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: * * * * HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V C < 8.0 pF 10 2 3 4 5 6 7 8 Absolute Maximum Ratings: Symbol VBR(R) *1 *2 IO *1 * 3 IFSM *1 PT1 *4 PT2 *4 Top Tstg Parameter Reverse Breakdown Voltage Continuous Forward Current Peak Surge Current (tp= 1/120 s) Power Dissipation per Junction @ 25C Power Dissipation per Package @ 25C Operating Junction Temperature Range Storage Temperature Range Limit 60 300 500 400 600 -65 to +150 -65 to +200 Unit Vdc mAdc mAdc mW mW C C 9 1: NOT CONNECTED .320 .290 .200 .125 .200 MAX .310 .220 .005 MIN .023 .014 .070 .030 .785 MAX .100 BSC .098 MAX NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% NOTE 3: Derate at 2.4mA/C above +25 C NOTE 4: Derate at 4.0mW/C above +25 C .060 .015 O-15 .015 .008 Electrical Characteristics (Per Diode) @ 25C unless otherwise specified PACKAGE OUTLINE Symbol Parameter Vf1 Vf2 IR1 Ct tfr trr Forward Voltage Forward Voltage Reverse Current Capacitance (pin to pin) Forward Recovery Time Reverse Recovery Time Conditions If = 100mAdc *1 If = 500mAdc *1 VR = 40 Vdc VR = 0 Vdc ; f = 1 MHz If = 500mAdc If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms Min Max 1 1.5 0.1 8.0 40 20 Unit Vdc Vdc uAdc pF ns ns NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice. MSC1018.PDF Rev - 11/25/98 |
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