NTE2585 Silicon NPN Transistor High Voltage Amplifier
Features: D High Breakdown Voltage D Low Output Capacitance D High Reliability D Intended for High-Density Mounting (Suitable for Sets Whose Height is Restricted) Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA VCE = 10V, IC = 2mA VCB = 100V, f = 1MHz IC = 10mA, IB = 2mA IC = 10mA, IB = 2mA Min - - 20 10 - - - - 800 800 7 Typ - - - - 40 1.6 - - - - - Max 1 1 50 - - - 1.0 1.5 - - - MHz pF V V V V V Unit A A
Collector Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = Emitter Base Breakdown Voltage V(BR)EBO IE = 100A, IC = 0
.402 (10.2)
.035 (0.9)
.177 (4.5) .051 (1.3)
.346 (8.8) B C E
.433 (11.0) .019 (0.5)
.100 (2.54)
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