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| NTE2580 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulsed Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Test Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 800mA VCE = 5V, IC = 4A VCE = 5V, IC = 10mA Gain-Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage fT Cob VCE(sat) VCE = 10V, IC = 800mA VCB = 10V, f = 1MHz IC = 4A, IB = 800mA Min - - 20 10 10 - - - Typ - - - - - 20 80 - Max 10 10 50 - - - - 0.8 MHz pF V Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Base Emitter Saturation Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol VBE(sat) Test Conditions IC = 4A, IB = 800mA Min - 500 400 7 400 - - - Typ - - - - - 0.5 2.5 0.3 Max 1.5 - - - - - - - Unit V V V V V s s s Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 5mA, RBE = V(BR)EBO IE = 1mA, IC = 0 VCEX(sus) IC = 3A, IB1 = -0.3A, L = 1mH, IB2 = -1.2A, Clamped ton tstg tf VCC = 200V, IC = 5A, IB1 = 1A, IB2 = - 2A, RL = 40 .402 (10.2) .035 (0.9) .177 (4.5) .051 (1.3) .346 (8.8) B C E .433 (11.0) .019 (0.5) .100 (2.54) |
Price & Availability of NTE2580
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