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| PD -95225 IRG4PC50FDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-247AC package * Lead-Free C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-cha n ne l Benefits * Generation -4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 70 39 280 280 25 280 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.24 ----6 (0.21) Max. 0.64 0.83 -----40 ------ Units C/W g (oz) 04/29/04 IRG4PC50FDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 Temperature Coeff. of Breakdown Voltage ---Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ---Forward Transconductance T 21 Zero Gate Voltage Collector Current ------Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---- Typ. ---0.62 1.45 1.79 1.53 ----14 30 ------1.3 1.2 ---- Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, IC = 1.0mA 1.6 IC = 39A VGE = 15V ---V IC = 70A See Fig. 2, 5 ---IC = 39A, TJ = 150C 6.0 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 39A 250 A VGE = 0V, VCE = 600V 6500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 25A See Fig. 13 1.5 IC = 25A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 190 28 65 55 25 240 140 1.5 2.4 3.9 59 27 400 260 6.5 13 4100 250 49 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 290 IC = 39A 42 nC VCC = 400V See Fig. 8 97 VGE = 15V ---TJ = 25C ---ns IC = 39A, VCC = 480V 360 VGE = 15V, RG = 5.0 210 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 5.0 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 39A, VCC = 480V ---VGE = 15V, RG = 5.0 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 75 ns TJ = 25C See Fig. 160 TJ = 125C 14 IF = 25A 10 A TJ = 25C See Fig. 15 VR = 200V 15 TJ = 125C 375 nC TJ = 25C See Fig. 1200 TJ = 125C 16 di/dt 200A/s ---A/s TJ = 25C See Fig. ---TJ = 125C 17 Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt 2 www.irf.com IRG4PC50FDPBF 50 40 Load Current ( A ) D uty c yc le: 50% T J = 125C T sink = 90C G ate drive as specified Turn-on loss es include effects of reverse rec overy Po w e r D is s ip a tio n = 4 0 W 6 0% of rate d vo lta g e 30 20 10 0 0.1 1 10 A 100 f, Frequenc y (k Hz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , C o lle c to r-to -E m itte r C u rre n t (A ) 1000 1000 100 I C , C o lle cto r-to -E m itte r C u rre n t (A ) 100 T J = 1 5 0 C TJ = 2 5 C 10 10 T J = 1 5 0C T J = 2 5 C 1 0.1 1 VG E = 1 5 V 2 0 s P U L S E W ID T H A 10 1 5 6 7 8 9 VC C = 5 0 V 5 s P U L S E W ID T H A 10 11 12 VC E , C o lle c to r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50FDPBF 70 M axim um D C C ollector C urrent (A ) 60 V C E , C olle c to r-to-E m itte r V olta ge (V ) V G E = 15V 2.5 V GE = 15V 8 0 s P U L S E W ID T H I C = 78A 50 2.0 40 30 IC = 39 A 1.5 20 10 I C = 20A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 1.0 T C , C as e Te m p e ra ture (C ) T J , J u n c tio n T e m p e ra tu re (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Therm al R e spo nse (Z th JC ) D = 0.50 0 .2 0 0.1 0 .1 0 0 .05 0 .0 2 0 .0 1 S ING L E P UL S E (TH E RM A L R E S PO NS E) PD M t 1 t2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0.01 0.00001 2 . P e a k TJ = P D M x Z th JC + T C 0.000 1 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D u ratio n (s ec ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50FDPBF 8000 VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc SHORTED 20 V G E , G a te -to -E m itte r V o lta ge (V ) A VCE = 40 0 V IC = 39A 16 C, Capacitance (pF) 6000 C ies 4000 12 Co e s 2000 8 C res 4 0 1 10 100 0 0 40 80 120 160 A 200 V C E, Collector-to-Emitter Voltage (V) Q g , T o ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.00 Total Switchig Losses (mJ) 4.50 Total Switchig Losses (mJ) V C C = 480V V G E = 15V T J = 25C I C = 39A 100 R G = 5.0 V G E = 15V V C C = 480V I C = 78A 10 I C = 39A I C = 20A 4.00 3.50 0 10 20 30 40 50 A 60 1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G ate R esistance ( ) TJ , Junction Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50FDPBF 16 12 I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total Switchig Losses (mJ) RG TJ V CC V GE = 5.0 = 150C = 480V = 15V 1000 VG E E 20V G= T J = 12 5C S A FE O P E R A TIN G A R E A 100 8 10 4 0 0 20 40 60 80 A 1 1 10 100 1000 I C , Collector-to-Em itter Current (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) TJ = 150 C TJ = 125 C 10 TJ = 25 C 1 0.6 1.0 1.4 1.8 2.2 2.6 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC50FDPBF 140 100 120 V R = 200V T J = 125C T J = 25C VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 100 I IR R M - (A ) I F = 5 0A I F = 25A 10 t rr - (ns) 80 I F = 50A I F = 25A I F = 10A 60 IF = 10A 40 20 100 di f /dt - (A/s) 1000 1 100 d i f /d t - (A / s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 1500 10000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 1200 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 900 I F = 50A d i(re c )M /d t - (A / s) Q R R - (n C ) 1000 I F = 10A 600 I F = 2 5A I F = 25A 300 I F = 10A 0 100 I F = 50A 1000 100 100 d i f /d t - (A / s ) d i f /d t - (A / s ) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC50FDPBF 90% V ge +V ge Same type device as D .U.T. V ce Ic 10% V ce 90% Ic Ic 5% Ic 80% of Vce 430F D .U .T. td (off) tf E off = t1+5 S V ce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g Ic trr Q rr = trr id dt tx tx 10% V c c Vce Vcc 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk 10% Irr Vcc V pk Irr Ic D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ie dt t1 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 t1 t2 t4 V d id dt t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC50FDPBF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0 F 100 V Vc* D.U.T. R L= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PC50FDPBF Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG = 5.0 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information E XAMPL E : T HIS IS AN IR F PE 30 WIT H AS S E MB LY L OT CODE 5657 AS S E MB L E D ON WW 35, 2000 IN T H E AS S E MB L Y L INE "H" N ote: "P" in assem bly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB LY L OT CODE PART NUMB E R IR F PE 30 56 035H 57 DAT E CODE YE AR 0 = 2000 WE E K 35 L INE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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