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| BSS 89 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Type Pin 2 D Marking Pin 3 S VDS 240 V ID 0.3 A RDS(on) 6 Package BSS 89 Type BSS 89 BSS 89 BSS 89 TO-92 SS89 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Drain-gate voltage RGS = 20 k VDS V DGR 240 V 240 VGS Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current TA = 25 C 20 Class 1 A 0.3 ID DC drain current, pulsed TA = 25 C IDpuls 1.2 Ptot Power dissipation TA = 25 C W 1 Data Sheet 1 05.99 BSS 89 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA -55 ... + 150 -55 ... + 150 C 125 E 55 / 150 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 240 - Gate threshold voltage VGS=V DS, ID = 1 mA V GS(th) 0.8 IDSS 1.5 2 A Zero gate voltage drain current VDS = 240 V, VGS = 0 V, Tj = 25 C VDS = 240 V, VGS = 0 V, Tj = 125 C VDS = 60 V, VGS = 0 V, Tj = 25 C IGSS 0.1 10 - 1 100 0.2 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance VGS = 10 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A 4.5 5.3 6 10 Data Sheet 2 05.99 BSS 89 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS 2 * ID * RDS(on)max, ID = 0.3 A gfs S 0.14 0.33 pF 115 155 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 15 25 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 8 12 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 tr 5 8 Rise time VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 td(off) 10 15 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 tf 30 40 Fall time VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 - 20 27 Data Sheet 3 05.99 BSS 89 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TA = 25 C IS A 0.3 Inverse diode direct current,pulsed TA = 25 C ISM V SD - 1.2 V Inverse diode forward voltage VGS = 0 V, IF = 0.6 A - 0.9 1.4 Data Sheet 4 05.99 BSS 89 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.32 1.2 W A 1.0 Ptot 0.9 0.8 ID 0.24 0.20 0.7 0.6 0.5 0.12 0.4 0.3 0.2 0.04 0.1 0.0 0 20 40 60 80 100 120 C 160 0.00 0 20 40 60 80 100 120 C 160 0.08 0.16 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 285 V 275 V(BR)DSS 270 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 C 160 Tj Data Sheet 5 05.99 BSS 89 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 0.70 A 0.60 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 19 Ptot = 1W lkj i h g f VGS [V] a 2.0 16 a b c ID 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 2 4 6 8 a c e RDS (on) 14 12 10 8 6 4 d e f g ih j b c d e f g 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 d h i j k l b 2 0 V 11 VGS [V] = a 3.0 2.5 2.0 b 3.5 c 4.0 d 4.5 e f 5.0 6.0 g 7.0 h i j 8.0 9.0 10.0 0.00 0.10 0.20 0.30 0.40 A 0.60 VDS ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 1.2 parameter: tp = 80 s, V DS2 x ID x RDS(on)max 0.55 S A ID gfs 0.45 0.40 0.8 0.35 0.30 0.6 0.25 0.20 0.15 0.2 0.10 0.05 0.0 0 1 2 3 4 5 6 7 8 V VGS 0.4 0.00 10 0.00 0.10 0.20 0.30 0.40 A ID 0.55 Data Sheet 6 05.99 BSS 89 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.3 A, VGS = 10 V 15 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 13 RDS (on) 12 11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 C 160 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 typ 1.6 1.2 typ 2% 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 pF C Ciss A IF 10 2 10 0 10 1 Coss Crss 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 |
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