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APT20M34BFLL APT20M34SFLL
200V 74A 0.034
POWER MOS 7
(R)
R
FREDFET
BFLL D3PAK
TO-247
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SFLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT20M34BFLL_SFLL UNIT Volts Amps
200 74 296 30 40 403 3.23 -55 to 150 300 74 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
200 0.034 250 1000 100 3 5
(VGS = 10V, ID = 37A)
Ohms A nA Volts
9-2004 050-7047 Rev B
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT20M34BFLL_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 74A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 74A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 133V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 133V, VGS = 15V ID = 74A, RG = 5 ID = 74A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
3660 1170 60 60 23 26 10 27 25 4 505 395 640 425
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
74 296 1.3 8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -74A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -74A, di/dt = 100A/s) Reverse Recovery Charge (IS = -74A, di/dt = 100A/s) Peak Recovery Current (IS = -74A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
240 420 1.0 2.0 10 16
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.31 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.35
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 0.470mH, RG = 25, Peak IL = 74A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID74A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30 0.25
0.9
0.7 0.20 0.15 0.10 0.05 0 10-5 0.5 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
9-2004
0.3
050-7047 Rev B
Z
JC
0.1 0.05
SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
160 140 120 100 80 60 40 20 0
APT20M34BFLL_SFLL
VGS=10 &15V 6.5V
RC MODEL Junction temp. (C) 0.131 Power (watts) 0.180 Case temperature. (C) 0.161F 0.00789F
ID, DRAIN CURRENT (AMPERES)
6V 5.5V 5V 4.5V 4V
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
120 100 80 60 40 20 0 TJ = +25C TJ = +125C TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
NORMALIZED TO V = 10V @ 37A
GS
ID, DRAIN CURRENT (AMPERES)
1.3 1.2
VGS=10V 1.1 1.0 0.9 0.8
VGS=20V 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
0
2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
80 70
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
1.10
60 50 40 30 20 10 0 25
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0.90
2.5
I V
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -50 -25
-50
= 37A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
050-7047 Rev B
9-2004
297
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT20M34BFLL_SFLL
ID, DRAIN CURRENT (AMPERES)
100 100S
C, CAPACITANCE (pF)
Ciss
1,000
Coss
10
1mS 10mS
100 Crss
1
TC =+25C TJ =+150C SINGLE PULSE 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 74A
200 100 TJ =+150C TJ =+25C
12
VDS=40V VDS=100V
8
VDS=160V
10
4
20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 50 td(off) 40
0
0
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 100
V
DD G
= 133V
R
= 5
T = 125C
J
L = 100H V
DD G
td(on) and td(off) (ns)
= 133V
80
tr and tf (ns)
30
R
= 5
T = 125C
J
tf 60 40 20 0 10 tr
L = 100H
20 td(on) 10
0 10
70 90 110 130 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
30
50
70 90 110 130 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1200
30
50
1200
= 133V R = 5
1000
SWITCHING ENERGY (J)
T = 125C L = 100H E ON includes diode reverse recovery.
800 600 400 200 0 10
Eon
SWITCHING ENERGY (J)
J
1000 800 600 400 200 0
V I
Eoff
Eon
9-2004
Eoff
DD
= 133V
D J
= 74A
T = 125C L = 100H E ON includes diode reverse recovery.
050-7047 Rev B
70 90 110 130 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
30
50
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT20M34BFLL_SFLL
90% 10% Gate Voltage TJ125C Gate Voltage TJ125C
td(on) tr
90%
td(off) tf
Drain Voltage 90%
Drain Current
5% Switching Energy
10%
5% Drain Voltage Switching Energy
10% 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60S20
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7047 Rev B
9-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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