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| CE CHENYI ELECTRONICS FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-MELF case with the type designation LL4151 1N4151 SMALL SIGNAL SWITCHING DIODE MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end . Weight: Approx. 0.13gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Reverse voltage Peak reverse voltage Average rectified current, Half wave rectification with Resistive load at TA=25 and F 50Hz IFSM Ptot TJ VR VRM IAV Value 50 75 1501) Units Volts Volts mA Surge forward current at t<1S and TJ=25 Power dissipation at TA=25 Junction temperature Storage temperature range 500 5001) 175 -65 to + 175 Ma Mw TSTG 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbols Forward voltage Leakage current at VR=50V VF IR Min. Typ. Max. 1 50 Units Volts nA at VR=20V, TJ=150 Junction capacitance at VR=VF=0V Reverse breakdown voltage tested with 5 A pulse Reverse recovery time from IF=10mA to IR=10mA to IR=1mA, from IF=10mA to IR=1mA to IR=1mA, VR=6V.RL=100 Thermal resistance junction to ambient Rectification efficience at f=100MHz,VRF=2V R IR CJ V(BR)R trr trr JA 50 75 2 A pF 4 4.000 3501) 0.45 ns ns K/W 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 CE CHENYI ELECTRONICS 1N4151 SMALL SIGNAL SWITCHING DIODE RATINGS AND CHATACTERISTIC CURVES 1N4151 FIG.2-DYNAMIC FORWARD RESISTANCE FLG.1-FORWARD CHARACTERISTICS VERSUS FORWARD CURRENT FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG.4-RELATIVE CAPACITANCE VERSUS VOLTAGE Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE CHENYI ELECTRONICS 1N4151 SMALL SIGNAL SWITCHING DIODE FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3 |
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