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| 1MBK50D-060S 600V / 50A Molded Package Features * Small molded package * Low power loss * Soft switching with low switching surge and noise * High reliability, high ruggedness (RBSOA, SCSOA etc.) * Comprehensive line-up Molded IGBT Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C) Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg Rating 600 20 65 50 150 200 130 +150 -40 to +150 39.2 to 58.8 Unit V V A A A W W C C N*m Equivalent Circuit Schematic IGBT + FWD C:Collector G:Gate E:Emitter Electrical characteristics (at Tc=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton * tr * trr2 toff tf ton * tr * trr2 toff tf VF trr Characteristics Min. Typ. - - 4.0 - - - - - - - - - - - - - - - - - - 5.0 2.4 2500 240 130 0.15 0.09 0.03 0.50 0.10 0.15 0.09 0.03 0.50 0.10 2.0 0.06 Conditions Max. 1.0 10 6.0 2.9 - - - - - - 0.62 0.17 - - - 0.62 0.17 2.5 0.10 VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, IC=50A VGE=0V VCE=25V f=1MHz VCC=300V, IC=50A VGE=15V RG=33 ohm (Half Bridge) Inductance Load VCC=300V, IC=50A VGE=+15V RG=8 ohm (Half Bridge) Inductance Load IF=50A, VGE=0V IF=50A, VGE=-10V, VR=300V, di/dt=100A/s mA A V V pF Unit s Turn-off time Switching Time Turn-on time s Turn-off time FWD forward on voltage Reverse recovery time V s *Turn-on characteristics include trr2. See a figure in next page. Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. - - - - Conditions Max. 0.63 0.96 IGBT FWD C/W C/W Unit 1MBK50D-060S Outline drawings, mm TO-247 Molded IGBT Gate Collector Emitter Switching waveform (Inductance load) Mesurement circuit 1MBK50D-060S Characteristics Collector current vs. Collector-Emitter voltage Tj=25C Molded IGBT Collector current vs. Collector-Emitter voltage Tj=125C Collector Current : IC (A) Collector Current : IC (A) Collector-Emitter Voltage : VCE (V) Collector-Emitter Voltage : VCE (V) Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25C Collector-Emitter Voltage : VCE (V) Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125C Collector-Emitter Voltage : VCE (V) Gate-Emitter Voltage : VGE (V) Gate-Emitter Voltage : VGE (V) Switching time vs. Collector current VCC=300V, RG=8, VGE=+15V, Tj=125C Switching time vs. Collector current VCC=300V, RG=33, VGE=15V, Tj=125C Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : IC (A) Switching time : tf,toff, tr, ton, trr2 (nsec) Collector current : IC (A) 1MBK50D-060S Characteristics Switching time vs. RG VCC=300V, IC=50A, VGE=+15V, Tj=125C Switching time vs. RG IGBT Module VCC=300V, IC=50A, VGE=15V, Tj=125C Switching time : tf,toff, tr, ton, trr2 (nsec) Gate resistance : RG () Switching time : tf,toff, tr, ton, trr2 (nsec) Gate resistance : RG () Dynamic input characteristics Tj=25C Capacitance : Cies, Coes, Cres (nF) Capacitance vs. Collector-Emitter voltage Tj=25C Collector-Emitter voltage : VCE (V) Gate-Emitter voltage : VGE (V) Collector-Emitter Voltage : VCE (V) Gate charge : Qg (nc) Reverse Biased Safe Operating Area RG=8, +VGE <20V, -VGE=15V, Tj <125C = = Forward Bias Safe Operating Area Collector current : IC (A) Collector current : IC (A) Collector-Emitter voltage : VCE (V) Collector-Emitter voltage : VCE (V) 1MBK50D-060S Characteristics Reverse recovery time vs. Forward current VR=300V, -di/dt=100A/sec IGBT Module Reverse recovery current vs. Forward current VR=300V, -di/dt=100A/sec Reverse recovery time : trr [nsec] Forward current : IF (A) Reverse recovery current : Irr [A] Forward current : IF (A) Reverse recovery chracteristics vs. -di/dt Forward voltage vs. Forward current VR=300V, IF=50A, Tj=125C Reverse recovery current : Irr [A] Reverse recovery time : trr [nsec] Forward Current : IF [A] Forward Voltage : VF (V) -di/dt [A/sec] Transient thermal resistance Thermal resistance : Rth(j-c) [C/W] Pulse width : PW (sec) |
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