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GS816273C-250/225
209-Pin BGA Commercial Temp Industrial Temp Features
* Single/Dual Cycle Deselect selectable * IEEE 1149.1 JTAG-compatible Boundary Scan * ZQ mode pin for user-selectable high/low output drive * 2.5 or 3.3 V +10%/-10% core power supply * 2.5 V or 3.3 V I/O supply * LBO pin for Linear or Interleaved Burst mode * Internal input resistors on mode pins allow floating mode pins * Byte Write (BW) and/or Global Write (GW) operation * Internal self-timed write cycle * Automatic power-down for portable applications * JEDEC-standard 209-bump BGA package
256K x 72 18Mb S/DCD Sync Burst SRAMs
250 MHz-225 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O
SCD and DCD Pipelined Reads The GS816273C is a SCD (Single Cycle Deselect) and DCD (Dual Cycle Deselect) pipelined synchronous SRAM. DCD SRAMs pipeline disable commands to the same degree as read commands. SCD SRAMs pipeline deselect commands one stage less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect command has been captured in the input registers. DCD RAMs hold the deselect command for one full cycle and then begin turning off their outputs just after the second rising edge of clock. The user may configure this SRAM for either mode of operation using the SCD mode input. Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs. FLXDriveTM The ZQ pin allows selection between high drive strength (ZQ low) for multi-drop bus applications and normal drive strength (ZQ floating or high) point-to-point applications. See the Output Driver Characteristics chart for details. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages The GS816273C operates on a 2.5 V or 3.3 V power supply. All input are 3.3 V and 2.5 V compatible. Separate output power (VDDQ) pins are used to decouple output noise from the internal circuits and are 3.3 V and 2.5 V compatible.
Functional Description
Applications The GS816273C is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Controls Addresses, data I/Os, chip enable (E1), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positiveedge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance.
Parameter Synopsis
-250 Pipeline 3-1-1-1 3.3 V 2.5 V tKQ tCycle Curr (x72) Curr (x72) 2.6 4.0 430 410 -225 2.6 4.5 400 375 Unit ns ns mA mA
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
209 Bump BGA--Top View--Package C
1 A B C D E F G H J K L M N P R T U V W Rev 10 DQG DQG DQG DQG DQPG DQC DQC DQC DQC NC DQH DQH DQH DQH DQPD DQD DQD DQD DQD 2 DQG DQG DQG DQG DQPC DQC DQC DQC DQC NC DQH DQH DQH DQH DQPH DQD DQD DQD DQD 3 A BC BH VSS VDDQ VSS VDDQ VSS VDDQ CK VDDQ VSS VDDQ VSS VDDQ VSS NC A TMS 4 E2 BG BD NC VDDQ VSS VDDQ VSS VDDQ NC VDDQ VSS VDDQ VSS VDDQ NC A1 A TDI 5 ADSP NC NC NC VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD NC A A A 6 ADSC BW E1 G VDD ZQ MCH MCL MCL MCL VDDQ/DNU MCL SCD ZZ VDD LBO A1 A1 A0 7 ADV A NC GW VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD NC A A A 8 E3 BB BE NC VDDQ VSS VDDQ VSS VDDQ NC VDDQ VSS VDDQ VSS VDDQ NC A A TDO 9 A BF BA VSS VDDQ VSS VDDQ VSS VDDQ NC VDDQ VSS VDDQ VSS VDDQ VSS NC A TCK 10 DQB DQB DQB DQB DQPF DQF DQF DQF DQF NC DQA DQA DQA DQA DQPA DQE DQE DQE DQE 11 DQB DQB DQB DQB DQPB DQF DQF DQF DQF NC DQA DQA DQA DQA DQPE DQE DQE DQE DQE
11 x 19 Bump BGA--14 x 22 mm2 Body--1 mm Bump Pitch
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(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
GS816273 BGA Pin Description Symbol
A0, A1 A DQA DQB DQC DQD DQE DQF DQG DQH BA, BB, BC,BD, BE, BF, BG,BH NC CK GW E1, E3 E2 G ADV ADSP, ADSC ZZ LBO SCD MCH MCL BW ZQ TMS TDI TDO TCK VDD VSS VDDQ VDDQ/DNU I I I I O I I I I --
Type
I I
Description
Address field LSBs and Address Counter Preset Inputs. Address Inputs
I/O
Data Input and Output pins
I -- I I I I I I I I I I I
Byte Write Enable for DQA, DQB, DQC, DQD, DQE, DQF, DQG, DQH I/Os; active low No Connect Clock Input Signal; active high Global Write Enable--Writes all bytes; active low Chip Enable; active low Chip Enable; active high Output Enable; active low Burst address counter advance enable; active low Address Strobe (Processor, Cache Controller); active low Sleep Mode control; active high Linear Burst Order mode; active low Single Cycle Deselect/Dual Cycle Deselect Mode Control Must Connect High Must Connect Low Byte Enable; active low FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low Drive]) Scan Test Mode Select Scan Test Data In Scan Test Data Out Scan Test Clock Core power supply I/O and Core Ground Output driver power supply VDDQ or VDD (must be tied high) or Do Not Use (must be left floating)
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GS816273C-250/225
Mode Pin Functions Mode Name
Burst Order Control Power Down Control Single/Dual Cycle Deselect Control FLXDrive Output Impedance Control
Pin Name
LBO ZZ SCD ZQ
State
L H L or NC H L H or NC L H or NC L
Function
Linear Burst Interleaved Burst Active Standby, IDD = ISB Dual Cycle Deselect Single Cycle Deselect High Drive (Low Impedance) Low Drive (High Impedance) Activate DQPx I/Os (x18/x36 mode) Deactivate DQPx I/Os (x16/x32 mode)
9th Bit Enable
PE H or NC
Note: There is a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above tables. Burst Counter Sequences
Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0]
1st address 2nd address 3rd address 00 01 10 01 10 11 10 11 00 11 00 01
Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0]
1st address 2nd address 3rd address 00 01 10 01 00 11 10 11 00 11 10 01
4th address 11 00 01 10 Note: The burst counter wraps to initial state on the 5th clock.
4th address 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
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GS816273C-250/225
Byte Write Truth Table Function
Read Read Write byte a Write byte b Write byte c Write byte d Write all bytes
GW
H H H H H H H
BW
H L L L L L L
BA
X H L H H H L
BB
X H H L H H L
BC
X H H H L H L
BD
X H H H H L L
Notes
1 1 2, 3 2, 3 2, 3, 4 2, 3, 4 2, 3, 4
Write all bytes L X X X X X Notes: 1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs. 2. Byte Write Enable inputs BA, BB, BC, and/or BD may be used in any combination with BW to write single or multiple bytes. 3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs. 4. Bytes "C" and "D" are only available on the x36 version.
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
Synchronous Truth Table Operation
Deselect Cycle, Power Down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst
Address Used
None External External External Next Next Next Next Current Current Current Current
State Diagram Key5
X R R W CR CR CW CW
E1
H L L L X H X H X H X H
ADSP
X L H H H X H X H X H X
ADSC
L X L L H H H H H H H H
ADV
X X X X L L L L H H H H
W3
X X F T F F T T F F T T
DQ4
High-Z Q Q D Q Q D D Q Q D D
Notes: 1. X = Don't Care, H = High, L = Low 2. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding 3. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown as "Q" in the Truth Table above). 4. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish basic synchronous or synchronous burst operations and may be avoided for simplicity. 5. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above. 6. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
Simplified State Diagram
X
Deselect W W Simple Synchronous Operation R R
X CW
First Write
R CR
First Read
X CR
Simple Burst Synchronous Operation
W R X Burst Write CR CW
R
Burst Read
X
CR
Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and that ADSP is tied high and ADSC is tied low. 3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and assumes ADSP is tied high and ADV is tied low.
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GS816273C-250/225
Simplified State Diagram with G
X
Deselect W W X W CW R R
First Write
R CR
First Read
X CR
CW
W X Burst Write R CR W CW
R X
Burst Read
CW
CR
Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of "Dummy Reads" (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles. 3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM's drivers off and for incoming data to meet Data Input Set Up Time.
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GS816273C-250/225
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
VDD VDDQ VCK VI/O VIN IIN IOUT PD TSTG TBIAS
Note:
Description
Voltage on VDD Pins Voltage in VDDQ Pins Voltage on Clock Input Pin Voltage on I/O Pins Voltage on Other Input Pins Input Current on Any Pin Output Current on Any I/O Pin Package Power Dissipation Storage Temperature Temperature Under Bias
Value
-0.5 to 4.6 -0.5 to 4.6 -0.5 to 6 -0.5 to VDDQ +0.5 ( 4.6 V max.) -0.5 to VDD +0.5 ( 4.6 V max.) +/-20 +/-20 1.5 -55 to 125 -55 to 125
Unit
V V V V V mA mA W
o o
C C
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.
Power Supply Voltage Ranges Parameter
3.3 V Supply Voltage 2.5 V Supply Voltage 3.3 V VDDQ I/O Supply Voltage 2.5 V VDDQ I/O Supply Voltage
Symbol
VDD3 VDD2 VDDQ3 VDDQ2
Min.
3.0 2.3 3.0 2.3
Typ.
3.3 2.5 3.3 2.5
Max.
3.6 2.7 3.6 2.7
Unit
V V V V
Notes
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
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GS816273C-250/225
VDDQ3 Range Logic Levels Parameter
VDD Input High Voltage VDD Input Low Voltage VDDQ I/O Input High Voltage VDDQ I/O Input Low Voltage
Symbol
VIH VIL VIHQ VILQ
Min.
2.0 -0.3 2.0 -0.3
Typ.
-- -- -- --
Max.
VDD + 0.3 0.8 VDDQ + 0.3 0.8
Unit
V V V V
Notes
1 1 1,3 1,3
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels Parameter
VDD Input High Voltage VDD Input Low Voltage VDDQ I/O Input High Voltage VDDQ I/O Input Low Voltage
Symbol
VIH VIL VIHQ VILQ
Min.
0.6*VDD -0.3 0.6*VDD -0.3
Typ.
-- -- -- --
Max.
VDD + 0.3 0.3*VDD VDDQ + 0.3 0.3*VDD
Unit
V V V V
Notes
1 1 1,3 1,3
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures Parameter
Ambient Temperature (Commercial Range Versions) Ambient Temperature (Industrial Range Versions)
Symbol
TA TA
Min.
0 -40
Typ.
25 25
Max.
70 85
Unit
C C
Notes
2 2
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.03 7/2004
10/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
Undershoot Measurement and Timing
VIH VDD + 2.0 V VSS 50% VSS - 2.0 V 20% tKC VIL 50% VDD
Overshoot Measurement and Timing
20% tKC
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Input Capacitance Input/Output Capacitance Note: These parameters are sample tested.
Symbol
CIN CI/O
Test conditions
VIN = 0 V VOUT = 0 V
Typ.
4 6
Max.
5 7
Unit
pF pF
AC Test Conditions Parameter
Input high level Input low level Input slew rate Input reference level Output reference level Output load
Conditions
VDD - 0.2 V 0.2 V 1 V/ns VDD/2 VDDQ/2 Fig. 1
Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table.
Output Load 1 DQ 50 VDDQ/2
* Distributed Test Jig Capacitance
30pF*
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
DC Electrical Characteristics Parameter
Input Leakage Current (except mode pins) ZZ Input Current SCD and ZQ Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage
Symbol
IIL IIN1 IIN2 IOL VOH2 VOH3 VOL
Test Conditions
VIN = 0 to VDD VDD VIN VIH 0 V VIN VIH VDD VIN VIL 0 V VIN VIL Output Disable, VOUT = 0 to VDD IOH = -8 mA, VDDQ = 2.375 V IOH = -8 mA, VDDQ = 3.135 V IOL = 8 mA
Min
-1 uA -1 uA -1 uA -100 uA -1 uA -1 uA 1.7 V 2.4 V --
Max
1 uA 1 uA 100 uA 1 uA 1 uA 1 uA -- -- 0.4 V
Operating Currents
-250 Parameter Operating Current 3.3 V Operating Current 2.5 V Standby Current Deselect Current Test Conditions Device Selected; All other inputs VIH or VIL Output open Device Selected; All other inputs VIH or VIL Output open ZZ VDD - 0.2 V Device Deselected; All other inputs VIH or VIL Mode Symbol 0 to 70C 355 75 -225 -40 to 85C 335 65 Unit -40 0 to 85C to 70C 365 75 325 65
(x72)
Pipeline
IDD IDDQ
mA
(x72)
Pipeline
IDD IDDQ ISB IDD
355 55 20 85
365 55 30 90
325 50 20 80
3235 50 30 85
mA
-- --
Pipeline Pipeline
mA
mA
Notes: 1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation. 2. All parameters listed are worst case scenario.
Rev: 1.03 7/2004
12/25
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
AC Electrical Characteristics
Parameter Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time G to output in High-Z G to Output Valid Clock HIGH Time Clock LOW Time Clock to Output in High-Z G to output in Low-Z ZZ setup time ZZ hold time ZZ recovery Symbol tKC tKQ tKQX tLZ1 tS tH tOHZ1 tOE tKH tKL tHZ1 tOLZ1 tZZS2 tZZH2 tZZR -250 Min 4.0 -- 1.0 1.0 1.2 0.2 -- -- 1.3 1.5 1.5 0 5 1 100 Max -- 2.6 -- -- -- -- 2.6 2.6 -- -- 2.6 -- -- -- -- Min 4.5 -- 1.0 1.0 1.3 0.3 -- -- 1.3 1.5 1.5 0 5 1 100 -225 Max -- 2.6 -- -- -- -- 2.6 2.6 -- -- 2.6 -- -- -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above.
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GS816273C-250/225
Pipeline Mode Timing (+1)
Begin
Read A
Cont
Cont
Deselect Write B tKC tKH tKL
Read C
Read C+1 Read C+2 Read C+3 Cont
Deselect
CK ADSP tS tH ADSC tS ADV tS tH A0-An
A B C ADSC initiated read
tH
tS GW tS BW tH tS Ba-Bd tS tH E1 tS tH E2 tS tH E3 G tS tOE DQa-DQd tOHZ
Q(A) D(B) E2 and E3 only sampled with ADSC Deselected with E1
tH
tH
tKQ tLZ
Q(C) Q(C+1) Q(C+2)
tKQX tHZ
Q(C+3)
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Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing
tKH tKC CK Setup Hold ADSP ADSC tZZR tZZS ZZ tZZH tKL
Application Tips
Single and Dual Cycle Deselect SCD devices (like this one) force the use of "dummy read cycles" (read cycles that are launched normally, but that are ended with the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address boundary crossings), but greater care must be exercised to avoid excessive bus contention.
JTAG Port Operation
Overview The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output drivers are powered by VDDQ. Disabling the JTAG Port It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected. Rev: 1.03 7/2004 15/25 (c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
JTAG Pin Descriptions Pin
TCK TMS
Pin Name
Test Clock Test Mode Select
I/O
In In
Description
Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. An undriven TMS input will produce the same result as a logic one input level. The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP Controller state machine and the instruction that is currently loaded in the TAP Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce the same result as a logic one input level.
TDI
Test Data In
In
TDO
Test Data Out
Output that is active depending on the state of the TAP state machine. Output changes in Out response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO.
Note: This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up. JTAG Port Registers Overview The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the TDI and TDO pins. Instruction Register The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the controller is placed in Test-Logic-Reset state. Bypass Register The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAM's JTAG Port to another device in the scan chain with as little delay as possible. Boundary Scan Register The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM's input or I/O pins. The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port's TDO pin. The Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z, SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
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GS816273C-250/225
JTAG TAP Block Diagram
* * *
108
*
*
*
*
*
*
* *
1
Boundary Scan Register
0
Bypass Register
210
0
Instruction Register TDI ID Code Register
31 30 29
TDO
*
***
210
Control Signals TMS TCK Test Access Port (TAP) Controller
Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. ID Register Contents Presence Register 0 1
Die Revision Code Bit # x72
Not Used
I/O Configuration
GSI Technology JEDEC Vendor ID Code
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 X X X X 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 011011001
Rev: 1.03 7/2004
17/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load address, data or control signals into the RAM or to preload the I/O buffers. When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this device is listed in the following table. JTAG Tap Controller State Diagram
1
Test Logic Reset
0 1 1 1
0
Run Test Idle
Select DR
0 1
Select IR
0 1
Capture DR
0
Capture IR
0
Shift DR
1 1
0 1
Shift IR
1
0
Exit1 DR
0
Exit1 IR
0
Pause DR
1
0
Pause IR
1
0
Exit2 DR
1
0
Exit2 IR
1
0
Update DR
1 0
Update IR
1 0
Instruction Descriptions BYPASS When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.
Rev: 1.03 7/2004
18/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then places the boundary scan register between the TDI and TDO pins. EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with all logic 0s. The EXTEST command does not block or override the RAM's input pins; therefore, the RAM's internal state is still determined by its input pins. Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command. Then the EXTEST command is used to output the Boundary Scan Register's contents, in parallel, on the RAM's data output drivers on the falling edge of TCK when the controller is in the Update-IR state. Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the sate of all the RAM's input and I/O pins, as well as the default values at Scan Register locations not associated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR state, the RAM's output pins drive out the value of the Boundary Scan Register location with which each output pin is associated. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR state. RFU These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.
Rev: 1.03 7/2004
19/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
JTAG TAP Instruction Set Summary Instruction
EXTEST IDCODE SAMPLE-Z RFU SAMPLE/ PRELOAD GSI RFU
Code
000 001 010 011 100 101 110
Description
Places the Boundary Scan Register between TDI and TDO. Preloads ID Register and places it between TDI and TDO. Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. Forces all RAM output drivers to High-Z. Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. GSI private instruction. Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
Notes
1 1, 2 1 1 1 1 1 1
BYPASS 111 Places Bypass Register between TDI and TDO. Notes: 1. Instruction codes expressed in binary, MSB on left, LSB on right. 2. Default instruction automatically loaded at power-up and in test-logic-reset state.
Rev: 1.03 7/2004
20/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
JTAG Port Recommended Operating Conditions and DC Characteristics Parameter
3.3 V Test Port Input High Voltage 3.3 V Test Port Input Low Voltage 2.5 V Test Port Input High Voltage 2.5 V Test Port Input Low Voltage TMS, TCK and TDI Input Leakage Current TMS, TCK and TDI Input Leakage Current TDO Output Leakage Current Test Port Output High Voltage Test Port Output Low Voltage Test Port Output CMOS High Test Port Output CMOS Low
Symbol
VIHJ3 VILJ3 VIHJ2 VILJ2 IINHJ IINLJ IOLJ VOHJ VOLJ VOHJC VOLJC
Min.
2.0 -0.3 0.6 * VDD2 -0.3 -300 -1 -1 1.7 -- VDDQ - 100 mV --
Max.
VDD3 +0.3 0.8 VDD2 +0.3 0.3 * VDD2 1 100 1 -- 0.4 -- 100 mV
Unit Notes
V V V V uA uA uA V V V V 1 1 1 1 2 3 4 5, 6 5, 7 5, 8 5, 9
Notes: 1. Input Under/overshoot voltage must be -2 V > Vi < VDDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC. 2. VILJ VIN VDDn 3. 0 V VIN VILJn 4. Output Disable, VOUT = 0 to VDDn 5. The TDO output driver is served by the VDDQ supply. 6. IOHJ = -4 mA 7. IOLJ = + 4 mA 8. IOHJC = -100 uA 9. IOHJC = +100 uA
JTAG Port AC Test Conditions Parameter
Input high level Input low level Input slew rate Input reference level Output reference level
Conditions
2.3 V 0.2 V 1 V/ns 1.25 V 1.25 V DQ
JTAG Port AC Test Load
50 VT = 1.25 V
* Distributed Test Jig Capacitance
30pF*
Notes: 1. Include scope and jig capacitance. 2. Test conditions as as shown unless otherwise noted.
Rev: 1.03 7/2004
21/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
JTAG Port Timing Diagram
tTKC TCK tTH tTS TDI tTH tTS TMS tTKQ TDO tTH tTS Parallel SRAM input
tTKH
tTKL
JTAG Port AC Electrical Characteristics
Parameter TCK Cycle Time TCK Low to TDO Valid TCK High Pulse Width TCK Low Pulse Width TDI & TMS Set Up Time TDI & TMS Hold Time Symbol tTKC tTKQ tTKH tTKL tTS tTH Min 50 -- 20 20 10 10 Max -- 20 -- -- -- -- Unit ns ns ns ns ns ns
Rev: 1.03 7/2004
22/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
209 BGA Package Drawing (Package C)
14 mm x 22 mm Body, 1.0 mm Bump Pitch, 11 x 19 Bump Array
C A1 A aaa D D1
Side View
e
Bottom View
E1 b e
Symbol A A1 b c D Rev 1.0
Min -- 0.40 0.50 0.31 21.9
Typ -- 0.50 0.60 0.36 22.0
Max 1.70 0.60 0.70 0.38 22.1
Units mm mm mm mm mm
Symbol D1 E E1 e aaa
Min -- 13.9 -- -- --
Typ 18.0 (BSC) 14.0 10.0 (BSC) 1.00 (BSC) 0.15
E
Max -- 14.1 -- -- --
Units mm mm mm mm mm
Thermal Characteristics Package
209 BGA (C)
Package Dimensions--119-Pin PBGA
Junction to Ambient () (C/W) 0 m/s
17.7
1 m/s
16.0
2 m/s
14.1
Junction to Case () (C/W)
2.8
Rev: 1.03 7/2004
23/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
Ordering Information for GSI Synchronous Burst RAMs Org
256K x 72 256K x 72 256K x 72 256K x 72
Part Number1
GS816273C-250 GS816273C-225 GS816273C-250I GS816273C-225I
Type
S/DCD Pipeline S/DCD Pipeline S/DCD Pipeline S/DCD Pipeline
Package
209 BGA 209 BGA 209 BGA 209 BGA
Speed2 (MHz)
250 225 250 225
TA3
C C I I
Status
Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS816273B-225IB. 2. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 3. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.03 7/2004
24/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816273C-250/225
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old; New 816273_r1 Types of Changes Format or Content Page;Revisions;Reason * Creation of new datasheet * Changed bump L6 to VDDQ/DNU * Removed PE pin (replaced with NC) * Updated tKQ numbers for 250 and 225 MHz * Updated AC Characteristics table (tOE, tHZ, and tOHZ to equal tKQ (PL) for 250 and 225 MHz) * Added new timing diagrams * Removed all speed bins except 250 and 200 MHz * Removed 200 MHz speed bin * Added 225 MHz speed bin * Updated format
816273_r1; 816273_r1_01
content
816273_r1_01; 816273_r1_02 816273_r1_02; 816273_r1_03
content Content/Format
Rev: 1.03 7/2004
25/25
(c) 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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