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APTM20DUM05G
Dual common source MOSFET Power Module
VDSS = 200V RDSon = 5m typ @ Tj = 25C ID = 317A @ Tc = 25C
D1 Q1
D2 Q2
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
G2
G1
S1 S
S2
G1 S1
D1
S
D2
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM20DUM05G - Rev 3
Max ratings 200 317 237 1268 30 6 1136 89 50 2500
Unit V A V m W A mJ
July, 2006
APTM20DUM05G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V T j = 25C
Tj = 125C
Typ
VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
5 3
Max 400 2000 6 5 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 300A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2
Min
Typ 27.4 8.72 0.38 448 172 188 28 56 81 99 1852 1820 2432 2124
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 300A IS = -300A, VR = 100V diS/dt = 400A/s 284 12.24
Max 317 237 1.3 5
Unit A V V/ns ns C
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2-6
APTM20DUM05G - Rev 3
July, 2006
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 300A di/dt 700A/s VR VDSS Tj 150C
APTM20DUM05G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.11 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-6
APTM20DUM05G - Rev 3
July, 2006
APTM20DUM05G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1000
VGS=15&10V 9V
800 ID, Drain Current (A)
Transfert Characteristics
VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
800 600 400 200 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1
VGS=10V
600
7.5V 7V 6.5V 6V 5.5V
400
T J=25C TJ =125C TJ =-55C
200
0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 320 I D, DC Drain Current (A) 280 240 200 160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (C) 150
July, 2006 4-6 APTM20DUM05G - Rev 3
Normalized to V GS=10V @ 158.5A
1.05 1 0.95 0.9 0 100 200 300 I D, Drain Current (A) 400
VGS=20V
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APTM20DUM05G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area ON resistance vs Temperature
VGS=10V ID= 158.5A
10000
1000
limited by RDSon
100s 1ms 10ms
100 Single pulse TJ=150C TC=25C 1
10
DC line
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 12 VDS=40V I D=300A 10 TJ=25C VDS=100V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC)
July, 2006
V DS =160V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM20DUM05G - Rev 3
APTM20DUM05G
Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 50 150 250 350 450 550 I D, Drain Current (A) Switching Energy vs Current
VDS=133V RG=1.2 TJ=125C L=100H
Rise and Fall times vs Current
160 140
td(off) t r and tf (ns)
120 100 80 60 40 20 0 50
V DS=133V RG=1.2 T J=125C L=100H
tf
tr
td(on)
150
250
350
450
550
ID, Drain Current (A) Switching Energy vs Gate Resistance 6 Switching Energy (mJ)
5 4 3 2 1 0 50 150 250 350 450 550
ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=133V RG=1.2 T J=125C L=100H
Eon Eoff
5.5 5 4.5 4 3.5 3 2.5 2 0
Eon and Eoff (mJ)
V DS=133V ID=300A T J=125C L=100H
Eoff Eon
Eoff 2.5 5 7.5 10 12.5 15
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
300
Frequency (kHz)
I DR, Reverse Drain Current (A)
350
TJ=150C 100
250 200 150 100 50 0 30
ZVS V DS=133V D=50% R G=1.2 T J=125C T C=75C ZCS
10
TJ =25C
Hard Switching
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
July, 2006
70
110 150 190 230 270 I D, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM20DUM05G - Rev 3

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