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TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
APT50GP60B2DF2
600V
POWER MOS 7 IGBT
(R)
T-MaxTM
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
* 200 kHz operation @ 400V, 28A * 100 kHz operation @ 400V, 44A * SSOA rated
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT50GP60B2DF2 UNIT
600 20 30
@ TC = 25C Volts
100 72 190 190A@600V 625 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 750
2
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2
Volts
I CES I GES
A nA
4-2004 050-7436 Rev C
3000 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GP60B2DF2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A
4 5
MIN
TYP
MAX
UNIT pF V nC A
5700 465 30 7.5 165 40 50 190 19 36 83 60 465 837 637 19 36 116 86 465 1261 1058
MIN TYP MAX UNIT C/W gm ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
4 5
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 50A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode)
6
J
THERMAL AND MECHANICAL CHARACTERISTICS .20 .67 6.10
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7436
Rev C
4-2004
TYPICAL PERFORMANCE CURVES
70 60 50 40 30 20 TC=25C TC=-55C
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
70 60 50 40 30 20 10 0
APT50GP60B2DF2
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TC=25C TC=125C TC=-55C
10 TC=125C 0
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 50A TJ = 25C
FIGURE 1, Output Characteristics(VGE = 15V) 100
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate Charge
IC, COLLECTOR CURRENT (A)
80 TJ = -55C TJ = 25C TJ = 125C
VCE=120V VCE=300V VCE=480V
60
40
20
0
0
2 3 45 67 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5
3 2.5 2 1.5 1 0.5 IC =100A IC = 50A IC = 25A
IC =100A IC = 50A
2 1.5 1 0.5
IC = 25A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
180 160 140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
4-2004 050-7436 Rev C
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
TYPICAL PERFORMANCE CURVES
40 35 30 25 20 15 10 05 VCE = 400V TJ = 25C or 125C RG = 5 L = 100 H VGE= 15V
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
140 120 100 80 60 40 20 0 VCE = 400V RG = 5 L = 100 H
VGE =15V,TJ=25C
APT50GP60B2DF2
VGE =15V,TJ=125C VGE =10V,TJ=125C
VGE= 10V
VGE =10V,TJ=25C
0 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100 90 80
tr, RISE TIME (ns) tf, FALL TIME (ns)
TJ = 25 or 125C,VGE = 10V
20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120
TJ = 125C, VGE = 10V or 15V
100 80 60 40 20
RG =5, L = 100H, VCE = 400V TJ = 25C, VGE = 10V or 15V
70 60 50 40 30 20 10
TJ = 25 or 125C,VGE = 15V
0 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000
EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500
VCE = 400V L = 100 H RG = 5
0
RG =5, L = 100H, VCE = 400V
3500 3000 2500 2000 1500 1000 500
TJ =125C, VGE=15V
3000 2500 2000 1500 1000 500
TJ = 125C, VGE = 10V or 15V
TJ =125C,VGE=10V
TJ = 25C, VGE=15V
0 10 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V TJ = 125C
TJ = 25C, VGE=10V
TJ = 25C, VGE = 10V or 15V
20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4000
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V RG = 5
0
5000 4000 3000 2000
3500 3000 2500 2000 1500 1000 500
Eon2 100A Eoff 100A
Eon2 100A
Eoff 100A
4-2004
Eon2 50A 1000 0 Eon2 25A 0 Eoff 50A Eoff 25A
Eon2 50A Eon2 25A
Eoff 50A Eoff 25A
Rev C
050-7436
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0 -50
TYPICAL PERFORMANCE CURVES
10,000 5,000
IC, COLLECTOR CURRENT (A)
Cies
200 180 160 140 120 100 180 160 140 120
APT50GP60B2DF2
C, CAPACITANCE ( F)
1,000 500 Coes
P
100 50 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
0.20 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.16 0.7 0.12 0.5 0.08 0.3 0.04 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC
-3 -2
0.1 0.05 SINGLE PULSE 10
-4
Duty Factor D = t1/t2
0
10
-5
10 10 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
210
FMAX, OPERATING FREQUENCY (kHz)
0.0090806
0.0046253
100
0.0192963 Junction temp. ( "C) Power (Watts) 0.0658343
0.0021766
50
0.0142175
0.1055619
0.345873
10 10 20
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
Case temperature
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
4-2004 050-7436 Rev C
TJ - TC R JC
TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
APT30DF60
Gate Voltage
10%
TJ = 125 C
td(on)
V CC IC V CE
tr 90%
A D.U.T.
Collector Current
5%
10%
5 % Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
VTEST
TJ = 125 C
*DRIVER SAME TYPE AS D.U.T.
td(off)
90%
tf
Collector Voltage
A V CE 100uH
0
IC V CLAMP B
Switching Energy
10%
Collector Current
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7436
Rev C
4-2004
TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 99C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 50A Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT50GP60B2DF2 UNIT Amps
30 49 320
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.6 3.6 1.9
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
21 62 65 3 113 411 7 49 704 22 -
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70
, THERMAL IMPEDANCE (C/W)
0.60 0.50 0.40
0.9
0.7
0.5 0.30 0.20 0.10 0 0.3 SINGLE PULSE Note:
PDM t1 t2
0.1 0.05 10-5 10-4
Z
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.378 C/W Power (watts) 0.291 C/W Case temperature (C) 0.110 J/C 0.00232 J/C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7436
Rev C
4-2004
APT50GP60B2DF2
100
trr, REVERSE RECOVERY TIME (ns)
120 60A 100 80 60 40 20 0 30A
90
IF, FORWARD CURRENT (A)
TJ = 125C VR = 400V
80 70 60 50 40 30 20 10 0 0 TJ = 125C TJ = 150C
15A
TJ = 25C
TJ = -55C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage
TJ = 125C VR = 400V
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change 25
IRRM, REVERSE RECOVERY CURRENT (A)
TJ = 125C VR = 400V
900
Qrr, REVERSE RECOVERY CHARGE (nC)
800 700 600 500 400 300 200 100 0
60A
60A 30A
20
15 30A 10 15A 5
15A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 1.0 trr 0.8 0.6 0.4 0.2 0.0 IRRM Qrr trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 60 50 40
IF(AV) (A)
Duty cycle = 0.5 TJ = 150C
0
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
30 20 10 0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 450 400
CJ, JUNCTION CAPACITANCE (pF)
0
50 75 100 125 150 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
25
350 300 250 200 150 100 50 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 .3
050-7436
Rev C
4-2004
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT6017LLL
APT50GP60B2DF2
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
T-MAX (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
(R)
Collector (Cathode)
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7436
Dimensions in Millimeters and (Inches)
Rev C
4-2004
1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)

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