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TYPICAL PERFORMANCE CURVES (R) APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT (R) E G C E The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 100 kHz operation @ 800V, 16A * 50 kHz operation @ 800V, 30A * RBSOA Rated S OT 22 7 ISOTOP (R) "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 All Ratings: TC = 25C unless otherwise specified. APT45GP120JDQ2 UNIT Volts 1200 30 75 34 170 170A @ 960V 329 -55 to 150 300 Amps @ TC = 150C Reverse Biad Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 750A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units 1200 3 4.5 3.3 3.0 750 2 2 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) Volts I CES I GES Gate-Emitter Leakage Current (VGE = 20V) 100 nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7445 APT Website - http://www.advancedpower.com Rev A 6-2005 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) A 3000 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT45GP120JDQ2 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 45A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC 3995 300 55 7.5 185 25 80 170 18 29 100 38 900 1870 905 18 29 150 80 900 3080 2255 J ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 45A RG = 5 Turn-on Switching Energy (Diode) 6 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V I C = 45A RG = 5 J Turn-on Switching Energy (Diode) 6 TJ = +125C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts .38 1.10 29.2 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7445 Rev A 6-2005 TYPICAL PERFORMANCE CURVES 90 80 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 90 80 70 60 50 40 30 20 10 0 APT45GP120JDQ2 TJ = 25C TJ = 125C TJ = 25C TJ = 125C 160 140 120 100 FIGURE 1, Output Characteristics(TJ = 25C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 FIGURE 2, Output Characteristics (TJ = 125C) I = 45A C T = 25C J 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VCE = 240V VCE = 600V TJ = -55C 80 60 40 20 0 0 1 TJ = 25C 8 6 4 2 0 0 VCE = 960V TJ = 125C 234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 90A TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 .05 0 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 4 IC = 90A IC = 45A IC = 45A 3 IC = 22.5A 2 IC = 22.5A 1 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.20 0 6 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 120 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) IC, DC COLLECTOR CURRENT(A) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 100 80 60 40 20 0 -50 050-7445 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature Rev A 6-2005 25 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 180 160 140 120 100 80 60 40 VCE = 600V 20 RG = 5 L = 100 H VGE =15V,TJ=25C VGE =15V,TJ=125C APT45GP120JDQ2 20 15 10 5 VCE = 600V 100 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 0 0 TJ = 25C, TJ =125C RG = 5 L = 100 H 100 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 0 0 80 70 60 50 40 30 20 10 0 RG = 5, L = 100H, VCE = 600V 100 RG = 5, L = 100H, VCE = 600V 80 tf, FALL TIME (ns) TJ = 125C, VGE = 15V tr, RISE TIME (ns) 60 40 TJ = 25C, VGE = 15V TJ = 25 or 125C,VGE = 15V 20 100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 0 8000 EON2, TURN ON ENERGY LOSS (J) 7000 6000 5000 4000 3000 2000 1000 0 EOFF, TURN OFF ENERGY LOSS (J) V = 600V CE V = +15V GE R = 5 G 6000 5000 4000 3000 2000 1000 = 600V V CE = +15V V GE R = 5 G TJ = 125C,VGE =15V TJ = 125C, VGE = 15V TJ = 25C,VGE =15V TJ = 25C, VGE = 15V 100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 0 12000 SWITCHING ENERGY LOSSES (J) 10000 8000 6000 4000 2000 0 SWITCHING ENERGY LOSSES (J) = 600V V CE = +15V V GE T = 125C J 8000 7000 6000 5000 4000 3000 2000 1000 0 = 600V V CE = +15V V GE R = 5 G Eon2,90A Eon2,90A Eoff,90A Eon2,45A Eoff,45A Eoff,90A Eon2,45A Eoff,45A Eon2,22.5A Eoff,22.5A 6-2005 Eon2,22.5A Eoff,22.5A Rev A 050-7445 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 10,000 Cies IC, COLLECTOR CURRENT (A) 180 160 140 120 100 80 60 40 20 APT45GP120JDQ2 C, CAPACITANCE ( F) 1,000 Coes 100 P Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Reverse Bias Safe Operating Area 0 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.5 Note: 0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.7 PDM 0.3 t1 t2 0.1 0.05 10-4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 90 FMAX, OPERATING FREQUENCY (kHz) RC MODEL Junction temp. (C) 50 0.0339 0.0004 F 10 5 T = 125C J T = 75C C D = 50 % V = 800V CE R = 5 G Power (watts) 0.0806 0.0269 = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max fmax2 = Pdiss = 0.265 Case temperature. (C) 0.608 Pdiss - Pcond Eon2 + Eoff TJ - TC RJC FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 1 10 050-7445 Rev A 6-2005 APT45GP120JDQ2 APT30DQ120 Gate Voltage 10% T J = 125 C Collector Voltage V CC IC V CE tr td(on) 90% A D.U.T. Collector Current 5% 10% 5% Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage t d(off) 90% tf Collector Voltage T J = 125 C A V CE 100uH IC V CLAMP A DRIVER* D.U.T. B 0 Switching Energy 10% Collector Current Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit 050-7445 Rev A 6-2005 TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 45A Forward Voltage IF = 90A IF = 40A, TJ = 125C MIN All Ratings: TC = 25C unless otherwise specified. APT45GP120JDQ2 UNIT Amps 26 37 210 TYP MAX UNIT Volts STATIC ELECTRICAL CHARACTERISTICS 2.9 3.56 2.28 MIN TYP MAX UNIT ns nC DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM ZJC, THERMAL IMPEDANCE (C/W) Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current 1.20 1.00 0.80 0.60 0.40 0.20 0 0.9 25 300 360 4 380 1700 8 160 2550 28 - IF = 30A, diF/dt = -200A/s VR = 800V, TC = 25C - Amps ns nC Amps ns nC Amps IF = 30A, diF/dt = -200A/s VR = 800V, TC = 125C IF = 30A, diF/dt = -1000A/s VR = 800V, TC = 125C 0.7 0.5 0.3 0.1 0.05 10-5 10-4 Note: PDM t1 t2 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (C) 0.219 0.00306 0.468 0.0463 Case temperature (C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL 050-7445 0.341 0.267 Rev A Power (watts) 6-2005 100 trr, REVERSE RECOVERY TIME (ns) 90 IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 125C TJ = -55C TJ = 175C TJ = 25C 450 400 350 300 250 200 150 100 50 30A 60A APT45GP120JDQ2 T = 125C J V = 800V R 15A 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage T = 125C J V = 800V R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 25 20 15 10 T = 125C J V = 800V R 0 4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0 60A 60A 30A 30A 15A 15A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 0.6 0.4 0.2 0.0 trr Qrr 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 45 40 35 30 IF(AV) (A) 25 20 15 10 5 Duty cycle = 0.5 T = 175C J IRRM Qrr 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 200 CJ, JUNCTION CAPACITANCE (pF) 0 75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature 0 25 50 150 100 6-2005 50 Rev A 050-7445 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 1 TYPICAL PERFORMANCE CURVES +18V 0V diF /dt Adjust Vr APT10035LLL APT45GP120JDQ2 D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 33. Diode Test Circui t 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 5 3 2 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. 0.25 IRRM 5 Figure 34, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Collector/Cathode * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. * Emitter/Anode Dimensions in Millimeters and (Inches) Gate ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7445 Rev A 6-2005 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) |
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