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APT40GP60B APT40GP60S
600V
POWER MOS 7 IGBT
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
TO-247
(R)
D3PAK
C
G C
G
E
E
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
* 100 kHz operation @ 400V, 41A * 200 kHz operation @ 400V, 26A * SSOA rated
G
C
E
All Ratings: TC = 25C unless otherwise specified.
APT40GP60B_S UNIT
600 20 30
@ TC = 25C Volts
100 62 160 160A @ 600V 543 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 250
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
I CES I GES
A nA
2-2004 050-7403 Rev D
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT40GP60B_S
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 40A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC(Peak) = 400V VGE = 15V I C = 40A
4
MIN
TYP
MAX
UNIT
4610 395 25 7.5 135 30 40 160 20 29 64 45 385 644 352 450 20 29 89 69 385 972 615 950 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5 6
R G = 5 TJ = +25C
J
Inductive Switching (125C) VCC(Peak) = 400V VGE = 15V I C = 40A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.23 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
2-2004 050-7403 Rev D
TYPICAL PERFORMANCE CURVES
80 70
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT40GP60B_S
80 70
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
60 50 40 30 20 10 0 TC=125C
TC=-55C
IC, COLLECTOR CURRENT (A)
TC=-55C
60 50 40 30 20 10 0 TC=125C TC=25C
TC=25C
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) 250
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 GATE CHARGE (nC) FIGURE 4, Gate Charge 140
IC = 40A TJ = 25C
IC, COLLECTOR CURRENT (A)
200
VCE=120V VCE=300V
150
VCE=480V
100
TJ = -55C TJ = 25C TJ = 125C
50
0
0
23 456 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 IC= 40A 2 1.5 1 0.5 0 IC= 20A IC= 80A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.5 3 2.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC= 80A
IC= 40A 2 IC= 20A 1.5 1 0.5 0 -50
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 180
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
160 140 120 100 80
2-2004 050-7403 Rev D
60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT40GP60B_S
40
td(ON), TURN-ON DELAY TIME (ns)
100
td (OFF), TURN-OFF DELAY TIME (ns)
VGE =15V,TJ=125C VGE =10V,TJ=125C VGE =15V,TJ=25C
35 VGE= 10V 30 25 20 15 10 5 0 0 VCE = 400V TJ = 25C, TJ =125C RG = 5 L = 100 H
80
VGE= 15V
60
40
VGE =10V,TJ=25C
20
VCE = 400V RG = 5 L = 100 H
20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120 100
tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 10V
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
RG =5, L = 100H, VCE = 400V TJ = 125C, VGE = 10V or 15V
0
80
tf, FALL TIME (ns)
80
60
60 40 20 0
TJ = 25 or 125C,VGE = 15V RG =5, L = 100H, VCE = 400V
40
TJ = 25C, VGE = 10V or 15V
20
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000
EON1, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V VGE = +15V RG = 5
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2000
VCE = 400V VGE = +15V RG = 5
0
TJ =125C, 15V
2500
TJ =125C,10V
1500
TJ = 125C, VGE = 10V or 15V
2000 1500 TJ = 25C, 10V
1000
1000
500
500
TJ = 25C, 15V
0 0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000
SWITCHING ENERGY LOSSES (J)
VCE = 400V TJ = 125C VGE = +15V
0
TJ = 25C, VGE = 10V or 15V
0 20 40 60 80 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3000
VCE = 400V VGE = +15V RG = 5
Eon2 80A
SWITCHING ENERGY LOSSES (J)
Eon2 80A
3500 3000 2500 2000 1500 1000
2500 2000
Eoff 80A Eon2 40A
1500
Eoff 80A Eon2 40A
2-2004
1000
Eoff 40A 500 0 0 Eoff20A
Eon2 20A
500 0
Rev D
Eoff 40A
Eon2 20A Eoff 20A
050-7403
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
10,000 5,000 Cies 160 140
IC, COLLECTOR CURRENT (A)
APT40GP60B_S
180
C, CAPACITANCE ( F)
1,000 500
P
Coes
120 100 80 60 40 20 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
100 50 Cres 10
0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25
, THERMAL IMPEDANCE (C/W)
0.9 0.20 0.7 0.15 0.5 0.10 0.3
t2
Note:
PDM t1
JC
0.05 0.1 0.05 0 10-5 10-4
Z
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
260
RC MODEL
0.0106
0.00663F
FMAX, OPERATING FREQUENCY (kHz)
Junction temp. ( "C)
100
Fmax = min(f max1 , f max 2 )
50
Power (Watts)
0.0868
0.0106F
f max1 =
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
0.05 t d (on) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
0.133 Case temperature
0.262F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10
TJ - TC R JC
20
30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
050-7403
Rev D
2-2004
APT40GP60B_S
APT30DF60
10%
Gate Voltage
TJ = 125 C
V CC
IC
V CE
td(on)
tr 90%
Collector Current
A D.U.T.
5% 10%
5%
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
TJ = 125 C
VTEST *DRIVER SAME TYPE AS D.U.T.
td(off)
Collector Voltage
A V CE IC 100uH
10% 0
90%
V CLAMP
B
tf
Switching Energy
Collector Current
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
TO-247 Package Outline
Collector (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
1.04 (.041) 1.15 (.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
2-2004
3.81 (.150) 4.06 (.160) (Base of Lead)
Rev D
Gate Collector Emitter
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Collector) and Leads are Plated
2.21 (.087) 2.59 (.102)
050-7403
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Emitter Collector Gate Dimensions in Millimeters (Inches)
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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