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| AO4470 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4470 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4470 is Pb-free (meets ROHS & Sony 259 specifications). AO4470L is a Green Product ordering option. AO4470 and AO4470L are electrically identical. Features VDS (V) = 30V ID = 18A RDS(ON) < 5.5m RDS(ON) < 6.2m (V GS = 10V) (VGS = 10V) (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 12 18 15 80 3 2.1 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 31 59 16 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4470 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=18A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=18A TJ=125C 0.8 80 4.2 6.4 4.9 102 0.64 1 4.5 9130 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 625 387 0.4 72.4 VGS=10V, VDS=15V, ID=18A 13.4 16.8 11 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=100A/s 7 99 13 33 22.2 15 11 135 19.5 40 30 0.8 85 10500 5.5 7.4 6.2 1.12 Min 30 Typ 34 0.005 1 5 100 1.5 Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 0 : Apr. 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4470 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 4.5V 80 60 ID (A) ID(A) 40 20 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 5.5 VGS=4.5V Normalized On-Resistance 1.6 ID=18A VGS=4.5V VGS=2V 10 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 10V 2.5V 50 40 30 20 125C 25C VDS=5V 60 5.0 RDS(ON) (m) 1.4 VGS=10V 1.2 4.5 4.0 VGS=10V 1 3.5 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 12 RDS(ON) (m) ID=18A 125C IS (A) 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 125C 8 4 25C 25C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4470 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 10 40 50 60 70 80 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 90 12000 VDS=15V ID=18A Capacitance (pF) 10000 8000 6000 4000 2000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss 100.0 RDS(ON) limited 10ms 10.0 ID (Amps) 0.1s 1s 10s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100 DC 100s 1ms Power (W) 10s 100 80 60 40 20 0 0.001 TJ(Max)=150C TA=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse PD Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 T 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd. |
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