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| UPS1040E3 10 A LOW VF Schottky BARRIER RECTIFIER SCOTTSDALE DIVISION DESCRIPTION KEY FEATURES WWW .Microsemi .C OM This UPS1040E3 in the Powermite3 package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, the Powermite3(R) package includes a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly and a unique locking tab act as an efficient heat path to the heat-sink mounting. Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com (R) ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3 ms Single half sine wave Superimposed on Rated Load@ Tc =90C Storage Temperature Junction Temperature Symbol VRRM VRWM VR V R (RMS) Io IFSM TSTG TJ Value Unit 40 28 10 150 -55 to +150 -55 to +150 V V A A C C Very low thermal resistance package RoHS Compliant with e3 suffix part number Guard-ring-die construction for transient protection Efficient heat path with Integral locking bottom metal tab Low forward voltage Full metallic bottom eliminates flux entrapment Compatible with automatic insertion Low profile-maximum height of 1mm Options for screening in accordance with MIL-PRF-19500 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. For example, designate MXUPS1040E3 for a JANTX (consult factory for Tin-Lead plating). Optional 100% avionics screening available by adding MA prefix for 100% temperature cycle, thermal impedance and 24 hours HTRB (consult factory for Tin-Lead plating) APPLICATIONS/BENEFITS Switching and Regulating Power Supplies. Silicon Schottky (hot carrier) rectifier for minimal reverse voltage recovery Elimination of reverse-recovery oscillations to reduce need for EMI filtering Charge Pump Circuits Reduces reverse recovery loss with low IRM Small foot print 190 X 270 mils (1:1 Actual size) See mounting pad details on pg 3 MECHANICAL & PACKAGING THERMAL CHARACTERISTICS Thermal Resistance Junction-to-case (bottom) Junction to ambient (1) RJC RJA 3.2 65 C/ Watt C/ Watt (1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print Powermite 3TM * CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0 * FINISH: Annealed matte-Tin plating over copper and readily solderable per MIL-STD-750 method 2026 (consult factory for Tin-Lead plating) * POLARITY: See figure (left) * MARKING: S1040* * WEIGHT: 0.072 gram (approx.) * Package dimension on last page * Tape & Reel option: 16 mm tape per Standard EIA-481-B, 5000 on 13" reel Copyright (c) 2005 6-09-2005 REV D UPS340E3 UPS1040E3 Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 UPS1040E3 10 A LOW VF Schottky BARRIER RECTIFIER SCOTTSDALE DIVISION ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) WWW .Microsemi .C OM Parameter Forward Voltage (Note 1) Symbol VF Conditions IF = 8 A , Tj = 25 C IF = 8 A , Tj = 125 C IF = 10 A , Tj = 25 C IR = 1 mA VR = 35 V, Tj = 25C VR = 35 V, Tj = 100 C VR = 4.0V; f = 1 MHZ Min Typ. 0.45 0.47 Max 0.49 0.41 0.51 Units V Reverse Break Down Voltage (Note 1) Reverse Current (Note1) VBR IR 40 0.1 12.5 700 0.3 25 V mA mA pF Capacitance CT Note: 1 Short duration test pulse used to minimize self - heating effect. GRAPHS UPS1040E3 Copyright (c) 2005 6-09-2005 REV D Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 UPS1040E3 10 A LOW VF Schottky BARRIER RECTIFIER SCOTTSDALE DIVISION WWW .Microsemi .C OM GRAPHS PF(AV), AVERAGE FORWARD POWER DISSIPATION IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 5 Forward power Dissipation NOTE 1: TA = TC at case bottom where RJC =2.5 C/W and RCA = 0 C/W (infinite heat sink). NOTE 2: Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RJA in range of 15-30 C/W. NOTE 3: Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RJA in range of 65C/W. See mounting pad dimensions on next page. UPS1040E3 Copyright (c) 2005 6-09-2005 REV D Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3 UPS1040E3 10 A LOW VF Schottky BARRIER RECTIFIER SCOTTSDALE DIVISION WWW .Microsemi .C OM PACKAGE & MOUNTING PAD DIMENSIONS PACKAGING: INCHES DIM A B C D E F G H J K L M N P NOMINAL 0.070 0.173 0.200 0.035 0.160 0.072 0.056 0.044 0.190 0.210 0.038 0.034 0.030 0.030 MILLIMETERS NOMINAL 1.778 4.392 5.080 0.889 4.064 1.829 1.422 1.118 4.826 5.344 0.965 0.864 0.762 0.762 UPS1040E3 Copyright (c) 2005 6-09-2005 REV D Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 4 |
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