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| MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TX-HB * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 68 8 10.5 B1 B3 B5 (P)+ 20 14 0 62.5 -0.2 740.25 20 14 86 B2 U B6 B4 V (N)- W 11-M4 (10) 18.5 18.5 18.5 18.5 (10) 4-5.40.1 10 800.25 94 P (+) B1 24.8 26 B3 U B5 V B6 N (-) W LABEL 7 4 2 28.2 B2 13 13 B4 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 0.98~1.47 10~15 520 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 B(E) terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V,Emitter open VEB=7V, Collector open IC=50A, IB=67mA IC=-50A (diode forward voltage) IC=50A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=50A, IB1=100mA, -IB2=1.0A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 80 2.5 3.0 1.8 -- 2.0 8.0 3.0 0.4 1.3 0.2 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=5.0V COLLECTOR CURRENT IC (A) IB=150mA 80 IB=100mA 60 IB=50mA IB=20mA 40 IB=10mA 20 DC CURRENT GAIN hFE VCE=2.5V Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.2 2.6 3.0 3.4 3.8 4.2 VCE=2.5V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 10 0 VCE(sat) 7 5 4 3 IB=67mA 2 Tj=25C Tj=125C -1 10 0 10 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 ts 10 0 7 5 4 3 2 10-1 10 0 tf 3 IC=50A 2 IC=25A SWITCHING TIME ton, ts, tf (s) 1 IC=10A ton Tj=25C Tj=125C 2 3 4 5 7 10 1 VCC=300V IB1=100mA IB2=-1.0A 2 3 4 5 7 10 2 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10-1 REVERSE BIAS SAFE OPERATING AREA 160 Tj=125C COLLECTOR CURRENT IC (A) ts, tf (s) ts 140 120 100 80 60 40 20 0 0 100 200 300 400 500 600 700 800 IB2=-3.5A IB2=-1.5A tf SWITCHING TIME VCC=300V IB1=100mA IC=50A Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 TC=25C NON-REPETITIVE -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 10 50 10 0 0 ss DERATING FACTOR OF F. B. S. O. A. 100 90 SECOND BREAKDOWN AREA COLLECTOR CURRENT IC (A) 10 DC 1m s m s DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 10 2 0.5 0.4 Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.3 0.2 0.1 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 10 0 0.2 0.6 1.0 1.4 Tj=25C Tj=125C 1.8 2.2 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 2 400 200 Qrr 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 10 0 7 5 trr 3 Tj=25C 2 Tj=125C 10 -1 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 VCC=300V IB1=100mA IB2=-1.0A CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE PART) 10 0 2 3 5 7 10 1 2 3 5 7 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) Feb.1999 trr (s) 300 Irr (A), Qrr (c) 10 1 7 5 3 2 Irr 10 1 |
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