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| MMBT3906 General Purpose Transistor PNP Silicon P b Lead(Pb)-Free COLLECTOR 3 3 1 BASE 2 EMITTER 1 SOT-23 2 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R JA PD R JA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Device Marking MMBT3906=2A Electrical Characteristics Off Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-10 Adc, IE=0) Emitter-Base Breakdown Voltage (IE=-10 Adc, IC=0) Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc) 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width <300 S, Duty Cycle <2.0%. = = V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0 -50 -50 Vdc Vdc Vdc nAdc nAdc - http://www.weitron.com.tw WEITRON MMBT3906 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics (3) DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) (IC= -100 mAdc, VCE= -1.0Vdc) Collector-Emitter Saturation Voltage (3) (IC= -10 mAdc, IB= -1.0mAdc) (IC= -50 mAdc, IB= -5.0mAdc) Base-Emitter Saturation Voltage (3) (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc) VCE(sat) HFE 60 80 100 60 30 300 -0.25 -0.4 -0.85 -0.95 Vdc - VBE(sat) -0.65 - Vdc Small-signal Characteristics Current-Gain-Bandwidth Product (4) (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz) Output Capacitance (VCB= -5.0 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz) Voltage Feeback Radio (VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz) Small-Signal Current Gain (VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz) Output Admittance (VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz) Noise Figure (VCE= -5.0Vdc IC= -100 Adc, , RS=1.0k ohms, f=1.0kHz) fT Cobo Cibo hie hre hfe hoe NF 250 2.0 0.1 100 3.0 4.5 10 12 10 MHz pF pF k ohms x 10-4 400 60 mhos dB 4.0 Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= -3.0 Vdc, VBE= 0.5 Vdc Ic= -10 mAdc, IB1= -1.0 mAdc) (Vcc= -3.0 Vdc, Ic= -10 mAdc, IB1=IB2= -1.0 mAdc) td tr ts tf 35 35 225 75 ns ns 3.Pulse Test:Pulse Width< 300 S, Duty Cycle< 2.0%. = = WEITRON http://www.weitron.com.tw MMBT3906 3V +9.1V <1ns +0.5V 10k CS<4 pF 10.6V 300 ns DUTY CYCLE=2% 10 TYPICAL TRANSIENT CHARACTERISTICS TJ=25 C 10 7.0 5000 3000 2000 TJ=125 C CAPACITANCE (pF) VCC=40V IC/IB=10 Q CHARGE (pC) 5.0 Cobo Cibo 1000 700 500 300 200 100 3.0 2.0 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSEM BIAS (VOLTS) IC COLLECTOR CURRENT (mA) FIG.3 Capacitance FIG.4 Charge Data 500 300 200 IC/IB=10 500 300 200 tf FALL TIME (ns) 100 100 70 50 30 20 10 7 5 IC/IB=20 VCC=40V IB1=IB2 TIME (ns) 70 50 30 20 10 7 5 tr@VCC=3.0V 15V 40V 2.0V td@VOB=0V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC COLLECTOP CURRENT (mA) 200 IC/IB=10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 FIG.5 Turn-On Time IC COLLECTYOR CURRENT (mA) FIG.6 Fall Time http://www.weitron.com.tw WEITRON MMBT3906 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz) 5.0 12 NF NOISE FIGURE (dB) SOURCE RESISTANCE=2001/2 IC=0.5 mA 3.0 NF NOISE FIGURE (dB) 4.0 SOURCE RESISTANCE=2001/2 IC=1.0 mA f=1.0 kHz 10 IC=1.0mA IC=0.5mA 8 6 IC=100A SOURCE RESISTANCE=2.0 k IC=50 A 2.0 4 2 0 IC=50A 1.0 SOURCE RESISTANCE=2.0 k IC=100 A 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f FREQUENCY (kHZ) FIG.7 Rg SOURCE RESISTANCE (k OHMS) FIG.8 h PARAMETERS 300 (VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C) 100 hoe OUTPUT ADMITTANCE ( mhos) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0 70 50 30 20 hfe DC CURRENT GAIN 200 100 70 50 10 7 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0 30 IC COLLECTOR CURRENT (mA) FIG.9 Current Gain IC COLLECTOR CURRENT(mA) FIG.10 Input Impedance hfe VOLTAGE FEEBACK RATIO (X 10x4) 20 10 7.0 5.0 3.0 2.0 hfe INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC COLLECTOR CURRENT (MA) IC COLLECTOR CURRENT (mA) FIG.11 Input Impedance FIG.12 Votage Feeback Ratio http://www.weitron.com.tw WEITRON MMBT3906 TYPICAL STATIC CHARACTERISTICS hFE DC CURRENT GAIN (NORMALIZED) 2.0 TJ=+125 C +25 C VCE=10V 1.0 0.7 -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC COLLECTOR CURRENT (mA) FIG.13 DC Current Gain VCE COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ=25 C 0.8 IC=1.0mA 10mA 30mA 100mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 FIG.14 Collector Saturation Region 1.0 TJ=25 C VBE(sat) @ IC/IB=10 IB BASE CURRENT (mA) qv TEMPERATURE COEFFICIENTS (mVAC) 1.0 0.5 0 -0.5 +25 C TO +125 C -1.0 -55 C TO +25 C -1.5 -2.0 qVB FOR VBE(sat) V VOLTAGE (VOLTS) 0.8 VBE(sat) @VCE=1.0V 0.6 qVC FOR VCE(sat) +25 C TO +125 C -55 C TO +25 C 0.4 VCE(sat) @ IC/IB=10 0.2 0 10 20 50 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC COLLECTOR CURRENT (mA) FIG.15 "ON" Voltages FIG.16 Temperature Coefficients IC COLLECTOR CURRENT (mA) http://www.weitron.com.tw WEITRON MMBT3906 SOT-23 Package Outline Dimensions A Unit:mm TOP VIEW B C E G H D K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw |
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