 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SHINDENGEN Schottky Rectifiers (SBD) Single M1FP3 30V 1.29A FEATURES OUTLINE DIMENSIONS Case : M1F Unit : mm *oemall SMT S *oe Super low VF=0.4V APPLICATION *oe Reversed Battery Connection Protection *oe OR output DC *oe DC/DC converter *oe Mobile telephone, personal computer RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions RatingsUnit Storage Temperature Tstg -55*125*Z Operating Junction Temperature Tj 125 *Z Maximum Reverse Voltage V RM 30 V Average Rectified Forward 50Hz sine wave, R-load Ta=25*Z*@On alumina sub IO Current 1.29 A 50Hz sine wave, R-load Tl=109*Z*@On glass-epoxy 1.1 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle30 peak value, Tj=2 A *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions RatingsUnit Forward Voltage V I=0.4A, Pulse measurement FF Max.0.35V I=1.1A, Pulse measurement F Max.0.40 Reverse Current IR V=30V, Pulse measurement Max.2.5mA R =10V Junction Capacitance Cj f=1MHz, V R Typ.90 pF AEjljunction to lead Max.20 Thermal Resistance AEja junction to ambient*@On alumina substrate Z/W Max.108 * junction to ambient*@On glass-epoxy substrate Max.186 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd M1FP3 Forward Voltage 10 Forward Current IF [A] Tl=125C [MAX] Tl=125C [TYP] Tl=25C [MAX] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage VF [V] M1FP3 Junction Capacitance f=1MHz Tl=25C TYP 1000 Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] M1FP3 1000 Reverse Current Tl=125C [MAX] 100 Tl=125C [TYP] Reverse Current IR [mA] Tl=100C [TYP] 10 Tl=75C [TYP] 1 Tl=50C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 Reverse Voltage VR [V] M1FP3 7 Reverse Power Dissipation Reverse Power Dissipation PR [W] 6 DC D=0.05 0.1 0.2 0.3 5 4 0.5 3 2 SIN 1 0.8 0 0 5 10 15 20 25 30 35 Reverse Voltage VR [V] Tj = 125C 0 VR tp D=tp /T T M1FP3 1 Forward Power Dissipation Forward Power Dissipation PF [W] 0.8 0.3 SIN 0.5 D=0.8 DC 0.6 0.05 0.1 0.2 0.4 0.2 0 0 0.5 1 1.5 2 2.5 Average Rectified Forward Current IO [A] Tj = 125C IO 0 tp D=tp /T T M1FP3 2.4 Derating Curve Average Rectified Forward Current IO [A] 2 DC D=0.8 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 1.6 0.5 1.2 SIN 0.8 0.3 0.4 0.2 0.1 0 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 15V 0 0 IO VR tp D=tp /T T M1FP3 Average Rectified Forward Current IO [A] 2 DC D=0.8 1.5 0.5 1 SIN 0.3 0.2 0.1 0.5 0.05 Derating Curve 0 0 20 40 60 80 100 120 140 160 Lead Temperature Tl [C] VR = 15V 0 0 IO VR tp D=tp /T T M1FP3 50 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 40 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
Price & Availability of M1FP3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |