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FMC6G30US60
September 2000
IGBT
FMC6G30US60
Compact & Complex Module
General Description
Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required.
Features
* * * * * * Short Circuit rated 10us @ TC = 100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 30A High Input Impedance Built in 3 Phase Rectifier Circuit Fast & Soft Anti-Parallel FWD
Package Code : 21PM-BB
P P1
Application
* * * * AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls
R EU S T
GU
GV
GW
EV U
EW V W
GU N B
GV
GW E
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque
TC = 25C unless otherwise noted
Inverter
Converter
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25C Short Circuit Withstand Time @ TC = 100C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 1 Cycle Surge Current Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4
FMC7G30US60 600 20 30 60 30 60 125 10 1200 30 300 369 -40 to +150 -40 to +125 2500 1.25
Units V V A A A A W us V A A A2s C C V N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A
FMC6G30US60
Electrical Characteristics of IGBT @ Inverter
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 30mA, VCE = VGE IC = 30A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1970 310 74 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---30 65 54 138 0.92 0.82 1.74 34 67 60 281 0.93 1.56 2.49 -85 17 39 --80 200 --2..4 --90 400 --3.4 -120 25 55 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC
VCC = 300 V, IC = 30A, RG = 7, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 30A, RG = 7, VGE = 15V, Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 30A, VGE = 15V
(c)2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A
FMC6G30US60
Electrical Characteristics of DIODE @ Inverter
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 30A di / dt = 60 A/us
TC = 25C unless otherwise noted
Test Conditions TC = 25C IF = 30A TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 2.0 2.0 90 130 2.2 3.4 400 880
Max. 2.8 -180 -3.4 -600 --
Units V ns A nC
Electrical Characteristics of DIODE @ Converter T
Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 30A TC = 100C VR = VRRM TC = 25C TC = 100C
Min. -----
Typ. 1.1 1.0 -5
Max. 1.5 -8 --
Units V mA
Thermal Characteristics
Inverter Brake Converter Weight Symbol RJC RJC RJC RJC RJC Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Weight of Module Parameter (IGBT Part, per 1/6 Module) (DIODE Part, per 1/6 Module) (IGBT Part) (DIODE Part) (DIODE Part, per 1/6 Module) Typ. -----270 Max. 1.0 2.2 1.0 2.2 2.0 -Units C/W C/W C/W C/W C/W g
(c)2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A
FMC6G30US60
90 80 70 Common Emitter TC = 25 20V 15V
90 80 Common Emitter VGE = 15V T C = 25 T C = 125 ------
Collector Current, IC [A]
8
70 60 50 40 30 20 10 0
Collector Current, IC [A]
60 12V 50 40 30 20 10 0 0 2 4 6 VGE = 10V
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
40 Common Emitter V GE = 15V 60A 35 30 45A
Collector - Emitter Voltage, V CE [V]
VCC = 300V Load Current : peak of square wave
4
Load Current [A]
3 30A 2 IC = 15A
25 20 15 10
1 5 0 -50 0 50 100 150 0 Duty cycle : 50% TC = 100 Power Dissipation = 45W 0.1 1 10 100 1000
Case Temperature, T C []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125
Collector - Emitter Voltage, VCE [V]
16
Collector - Emitter Voltage, VCE [V]
16
12
12
8
8 60A 4 IC = 15A 0 30A
4 IC = 15A 0 4 8
30A
60A
12
16
20
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2000 Fairchild Semiconductor International
Fig 6. Saturation Voltage vs. VGE
FMC6G30US60 Rev. A
FMC6G30US60
3500 3000 2500 2000 1500 1000 Cres 500 0 1 Coes Cies
1000 Common Emitter VGE = 0V, f = 1MHz TC = 25 Common Emitter VCC = 300V, VGE = 15V IC = 30A T C = 25 T C = 125 ------
Ton
Capacitance [pF]
Switching Time [ns]
Tr 100
10 10 1 10 100
Collector - Emitter Voltage, V CE [V]
Gate Resistance, RG [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Common Emitter V CC = 300V, V GE = 15V IC = 30A T C = 25 T C = 125 -----Toff Toff Tf
10000 Common Emitter V CC = 300V, VGE = 15V IC = 30A T C = 25 T C = 125 ------
Switching Loss [uJ]
Eon Eoff
1000 Eoff
Tf 100 100 1 10 100 1 10 100
Gate Resistance, R G [ ]
Gate Resistance, R G [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter V GE = 15V, RG = 7 T C = 25 T C = 125 ------
1000 Common Emitter V GE = 15V, RG = 7 T C = 25 T C = 125 -----Ton
Switching Time [ns]
Switching Time [ns]
Toff
100
Tr
Tf
Toff 100 Tf
10 15 30 45 60 15 30 45 60
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2000 Fairchild Semiconductor International
Fig 12. Turn-Off Characteristics vs. Collector Current
FMC6G30US60 Rev. A
FMC6G30US60
10000 Common Emitter VGE = 15V, RG = 7 TC = 25 TC = 125 ------
15 Common Emitter RL = 10 TC = 25 V CC = 100 V 300 V 200 V 9
Switching Loss [uJ]
Eoff Eon 1000 Eoff
Gate - Emitter Voltage, V [ V ] GE
60
12
6
3
100 15 30 45
0 0 20 40 60 80 100
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
200 100 IC MAX. (Pulsed) IC MAX. (Continuous) 50us 100us 10 DC Operation 1 100
Collector Current, IC [A]
Collector Current, IC [A]
10
1
Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
Safe Operating Area V GE = 20V, T C = 100 1 1 10 100 1000
0.1
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
100
5
Thermal Response, Zthjc [/W]
Collector Current, I C [A]
1
10
0.1
1 Single Nonrepetitive Pulse TJ 125 VGE = 15V RG = 7 0 100 200 300 400 500 600 700
0.01 0.005 10
-5
0.1
IGBT : DIODE : 10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, VCE [V]
Rectangular Pulse Duration [sec]
Fig 17. RBSOA Characteristics
(c)2000 Fairchild Semiconductor International
Fig 18. Transient Thermal Impedance
FMC6G30US60 Rev. A
FMC6G30US60
90
20
Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns]
80 70
Common Cathode V GE = 0V T C = 25 T C = 125
10
T rr
[A] Forward Current, I
F
60 50 40 30 20 10 0 0 1 2 3 4
Irr
1
Common Cathode di/dt = 60A/us TC = 25 TC = 100 5 10 15 20 25 30
0.5
Forward Voltage, V F [V]
Forward Current, IF [A]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
(c)2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A
FMC6G30US60
Package Dimension
21PM-BB (FS PKG CODE BK)
8.0
15.0
15.0
17.2
48.26(2.54*19)
10-4.0*0.6t
2.5
3*10.16
11-0.7*0.6t
P
P1
N
GU EU
GV EV
GW EW
GB -GV E -GU -GW
2-4.5 Mounting Hole
60.0
58.0
38.0
NAME PLATE
R
S
T
B
U
V
W
5.0
8.0
12.5
12.5
15.0
15.0
12.5
12.5
17.0
115.0
21.0
12.0
6.0
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International
14.1
FMC6G30US60 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R)
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R)
QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. F1

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