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| SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES * VDS - 200V 7 ZVP1320F D S PARTMARKING DETAIL - MT G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -100 80 25 50 15 5 8 8 8 16 -200 -1.5 -3.5 20 -10 -50 SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -200 -35 -400 20 UNIT V mA mA V mW C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). MAX. UNIT CONDITIONS. V V nA A A ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-200V, VGS=0V VDS=-160V, VGS=0V, T=125C(2) VDS=-25V, VGS=-10V VGS=-10V, ID=-50mA VDS=-25V, ID=-50mA mA Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz VDD -25V, ID=-50mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 423 ZVP1320F TYPICAL CHARACTERISTICS -280 -240 VGS= -20V -10V -9V -8V -7V -160 -120 -80 -40 -4V 0 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 -40 -6V -5V -160 -140 VGS= -20V -10V -8V -7V -6V -5V ID - Drain Current (mA) -200 ID - Drain Current (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 -4V -10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics -10 VDS-Drain Source Voltage (Volts) -140 ID - Drain Current (mA) -120 -100 -80 -60 -40 -20 0 VDS= -10V -8 -6 ID= -60mA -40mA -2 -20mA 0 0 -2 -4 -6 -8 -10 -4 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics Transfer Characteristics gfs-Forward Transconductance(mS) 50 40 60 50 40 30 20 10 C-Capacitance (pF) 30 Ciss 20 VDS=-10V 10 Coss Crss -100 0 0 -20 -40 -60 -80 0 -20 -40 -60 -80 -100 -120 VDS-Drain Source Voltage (Volts) ID-Drain Current (mA) Capacitance v drain-source voltage Transconductance v drain current 3 - 424 ZVP1320F TYPICAL CHARACTERISTICS gfs-Forward Transconductance (mS) VGS-Gate Source Voltage (Volts) 60 50 40 30 20 10 0 0 -2 -4 -6 -8 -10 VDS=-10V 0 -2 -4 -6 -8 -10 -12 -14 -16 0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= -50V -100V -200V ID= -150mA VGS-Gate Source Voltage (Volts) Q-Charge (nC) Transconductance v gate-source voltage Gate charge v gate-source voltage RDS(on) -Drain Source Resistance () 1000 2.4 Normalised RDS(on) and VGS(th) VGS=-5V -6V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 Dr e eR rc ou -S ain -8V -10V 100 -20V eR nc ta sis n) (o DS VGS=-10V ID=-50mA Gate Thresh old VGS=VDS ID=-1mA Voltage VG S(TH) 10 -1 -10 -100 -1000 0 20 40 60 80 100 120 140 160 180 ID-Drain Current (mA) T-Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3 - 425 |
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